• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.248-250
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• 1987

Transparent CdS films with low electrical restivity on glass substrates were prepared by coating a CdS slurry which contained 10 wt.% $CdCl_2$, and sintering in a nitrogen atmosphere at $600^{\circ}C$ for 2hr. All-polycrystalline CdS/CdTe solar cells were fabricated by coating CdTe slurries, which contained 1.0 or 4.5 wt.% $CdCl_2$, on the sintered CdS films and sintering at $700^{\circ}C$ for various periods of sintering. The spectral responses of the sintered CdS/CdTe solar cells were measured and compared with theoretically calculated quantum efficiency. The spectral responses of the sintered CdS/CdTe solar cells in the short-wavelength region decreases with-increasing sintering time. The poor response in this region is attributed to the existence of the Cd-S-Te solid solution in the compositional junction. The decrease in the maximum response in the long-wavelength region as the sintering exceeds certain time appears to be caused by the increase in the depth of the buried homo junction and by the increase in the series resistance. The $CdCl_2$ in the CdTe layer during sintering enchances the interdiffusion of S, Te or donor impurities across the metallurgical Junction causing the formation of deeper n-p junction in the CdTe layer.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.152-152
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• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.379-379
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• 2010

$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1146-1150
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• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• Journal of Powder Materials
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• v.3 no.4
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• pp.246-252
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• 1996

$Bi_{2}Te_{3}-Sb_{2}Te_{3}$, $Bi_{2}Te_{3}-Bi_{2}Se_{3}$ solid solutions are of great interest as materials for thermoelectric energy conversion. One of the key technologies to ensure the efficiency of thermoelectric device is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification followed by hot pressing was investigated to produce homogeneous thermoelectric materials. Characteristics of the materials were examined with XRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as excess Te quantity and hot pressing temperature. Quenched ribbons are very brittle and consisted of homogeneous $Bi_{2}Te_{3}$, $Sb_{2}Te_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 3.073$\times$$10^{-3}K^{-4}$. The bending strength of the material, hot pressed at 45$0^{\circ}C$, was 5.87 kgf/${mm}^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.89-93
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• 1999

The properties and effects of the electrodeposited CdTe compound film on the porous silicon. To find ways to achieve good mechanical contact on the nanostructure porous silicon layer while keeping the interface transparent, we tried to electrodeposit a CdTe compound film on the porous silicon surface. The CdTe compound film was fabricated with -2.3V vs. Ag/AgCl potential difference in the electrolyte solution containing 1M of $CdSO_4$and 1 mM of $TeO_4$. X-ray diffraction results confirmed the existence of CdTe compound film on the porous silicon surface. Auger depth profile showed that Cd and Te were uniformly distributed up to a 80 nm distance from the surface. The photoluminescence of the sample with a CdTe compound film was weaker in intensity than that without the film and the maximum wavelength was shifted to the higher energy. These results indicate that the contacting CdTe compound film was infiltrated to the nanostructure of porous silicon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.286-291
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• 2000

$Cd_{1-x}Mn_{x}Te$ singe crystals were grown by the vertical Bridgman method and the Faraday rotations were measured as a function of wavelength and magnetic field. The Verdet constants were evaluated using the result of Faraday rotation. The Verdet constants were maximum at nearly absorption edge and increased for $0\leq x \leq 0.38 $ but decreased for x>0.40. We found that large Faraday rotation occur in $Cd_{0.62}Mn_{0.38}Te$ at nearly absorption edge wavelength was more useful for a magnetic field sensor than any other crystals, and $Cd_{0.60}Mn_{0.40}Te$ crystal was useful in this application when wavelength is He-Ne laser wavelength.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.308-308
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• 2012

Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

• Economic and Environmental Geology
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• v.26 no.3
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• pp.327-335
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• 1993

Phase relations in the system Pd-Sb-Te were investigated at $1000^{\circ}$, $800^{\circ}$, and $600^{\circ}C$, using the sealed-capsule technique; the quenched products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. At $1000^{\circ}C$, the solid phases Pd, $Pd_{20}Sb_7$, $Pd_8Sb_3$, $Pd_{31}Sb_{12}$, and $Pd_5Sb_2$ are stable with a liquid phase that occupies most of the isothermal diagram. Additional solid phases at $800^{\circ}C$ are $Pd_5Sb_3$, PdSb, $Pd_8Te_3$, $Pd_7Te_3$, and a continuous $Pd_{20}Te_7-Pd_{20}Sb_7$ solid solution becomes stable. At $600^{\circ}$, $PdSb_2$, $Pd_{17}Te_4$, $Pd_9Te_4$, PdTe, $PdTe_2$, $Sb_2Te_3$, and Sb and continuous PdSb-PdTe and $PdTe-PdTe_2$ solid solutions are stable. All the solid phases exhibit solid solution, mainly by substitution between Sb and Te to an extent that varies with temperature of formation. The maximum substitution (at.%) of Te for Sb in the Pd-Sb phases is: 44.3 in $Pd_8Sb_3$, 52.0 in $Pd_{31}Sb_{12}$, 46.2 in $Pd_5Sb_2$ at $800^{\circ}C$; 15.3 in $Pd_5Sb_3$, 68.3 in $PdSb_2$ at $600^{\circ}C$. The maximum substitution (at.%) of Sb for Te in the Pd-Te phases is 34.5 in $Pd_5Sb_3$ at $800^{\circ}C$, and 41.6 in $Pd_7Te_3$, 5.2 in $Pd_{17}T_4$, 12.4 in $Pd_9Te_4$, and 19.1 in $PdTe_2$ at $600^{\circ}C$. Physical properties and X-ray data of the synthetic $Pd_9Te_4$, PdTe, $PdTe_2$, $Pd_8Sb_3$, PdSb, and $Sb_2Te_3$ correspond very well with those of telluropalladinite, kotulskite, merenskyite, mertieite II, sudburyite, and tellurantimony, respectively. Because X-ray powder diffraction data consistently reveal a 310 peak ($2.035{\AA}$), the $PdSb_2$ phase is most probably of cubic structure with space group $P2_13$. The X-ray powder pattern of a phase with PdSbTe composition, synthesized at $600^{\circ}C$, compares well with that of testibipalladite. Therefore, testibiopalladite may be a member of the $PdSb_2-Pd(Sb_{0.32}Te_{0.68})$ solid solution series which is cubic and $P2_13$ in symmetry. Thus the ideal fonnula for testibiopalladite, presently PdSbTe, must be revised to PdTe(Sb, Te). Borovskite($pd_3SbTe_4$) has not been found in the synthetic system in the temperature range $1000^{\circ}-600^{\circ}C$.