• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.128-128
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• 2009

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.86-87
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.91.2-91.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.60.2-60.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.34.2-34.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.75.2-75.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.237.1-237.1
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• 2008

• 한국진공학회지
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• 제7권s1호
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1279-1282
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• 2018

This paper reports the deposition of a metal line using a multilayer stack and laser-induced forward transfer (LIFT) using a low cost continuous wave blue laser with a wavelength of 450 nm. The donor structure was composed of a light-to-heat (LTH) layer, a release layer, and a transfer layer in series. Amorphous silicon as the LTH layer absorbs photon energy and converts it to heat. A release layer was melted so that a silver transfer layer would be transferred to the receiver substrate. The transferred silver layer showed reasonable physical and electrical characteristics. A low cost fine linewidth metal layer could be achieved using this modified LIFT technique and blue laser.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.110-110
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• 2006