• Title/Summary/Keyword: Materials engineering

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Deposition of Fine Linewidth Silver Layer using a Modified Laser-induced Forward Transfer Technique

  • Cheon, Jonggyu;Nguyen, Manh-Cuong;Nguyen, An Hoang-Thuy;Choi, Sujin;Ji, Hyung-Min;Kim, Sang-Woo;Yu, Kyoung-Moon;Kim, Jin-Hyun;Cho, Seong-Yong;Choi, Rino
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1279-1282
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    • 2018

  • This paper reports the deposition of a metal line using a multilayer stack and laser-induced forward transfer (LIFT) using a low cost continuous wave blue laser with a wavelength of 450 nm. The donor structure was composed of a light-to-heat (LTH) layer, a release layer, and a transfer layer in series. Amorphous silicon as the LTH layer absorbs photon energy and converts it to heat. A release layer was melted so that a silver transfer layer would be transferred to the receiver substrate. The transferred silver layer showed reasonable physical and electrical characteristics. A low cost fine linewidth metal layer could be achieved using this modified LIFT technique and blue laser.

  • https://doi.org/10.3938/jkps.73.1279 인용 KSCI

Structural and Optical Properties of GaN Nanowires Formed on Si(111)

  • Han, Sangmoon;Choi, Ilgyu;Song, Jihoon;Lee, Cheul-Ro;Cho, Il-Wook;Ryu, Mee-Yi;Kim, Jin Soo
    • Applied Science and Convergence Technology
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    • v.27 no.5
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    • pp.95-99
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    • 2018

  • We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

  • https://doi.org/10.5757/ASCT.2018.27.5.95 인용 KSCI