• Proceedings of the Korean Society of Precision Engineering Conference
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.379-382
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• 2004

Abrasive jet machining (AJM) has a large number of parameters such as powder flow rate, air pressure, diameter of abrasive, stand off distance, material hardness and fracture toughness, etc. It is not easy matter to control those parameter. To achieve high accurate machining, in this study, Taguchi method was used to select process parameters. The objective of the optimization was to get higher material removal rate (MRR). From the experiments and analysis, some process parameters were found to make efficient machining.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제10권2호
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• pp.407-411
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• 2009

This study presents the analysis of the identifications and determinations of the material parameters in the developed model in the former paper and their effects on the stress paths. It was shown that the influences of the parameters, specially involved in the strain rate and the viscous nucleus, were in generally acceptable range. From this point, the model was modified by identifying the plastic yield surface and the viscous yield surface in the same mathematical form. The modified model was successful in simulating stress path.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제17권1호
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• pp.101-106
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• 2004

The phenomenon of PD(Partial Discharge) is accompanied by electromagnetic wave which can be detected by UHF(Ultra High Frequency) antenna. The signals obtaining from UHF antenna are very high rapid pulse and have wide band frequency responses. The distribution of PRPD(Phase Resolved Partial Discharge) which consisted of those pulse train can show distinct characteristics of PD sources. But it is not sufficient to discriminate among PD sources. This paper suggests that the stochastic parameters formed by preprocessing of STFT(Short Time Fourier Transform) are good tools for differentiate from PD sources. The stochastic parameters are CC(Cross Correlation) mean value, CC standard deviation, CC skewness, CC kurtosis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.243-246
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• 2001

Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.255-258
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• 2001

In this paper, DC and small signal characteristics with different physical parameters are expected for p-HEMTs (Pseudomorphic High Electron Mobility Transistors) with different temperatures ranging from 300K to 623K which are widely used for a low noise and/or ultra high frequency device. A device of 0.2$\times$200 ${\mu}{\textrm}{m}$$^2$dimension having very low noise has been chosen to extract the experimental data. Theoretical prediction has been obtained using a simulaor(HELENA) which needs experimental input data extracted from reverse engineering process. From the results, relation between structural parameters and temperature dependency of electrical characteristics are qualitatively explained to use in the design of descrete and integrated circuits to guarantee the optimal operation of the system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.158-162
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• 1995

We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV$\_$CEO/ of 10 V, fT of 30 GHz and f$\_$max/ of 17 GHz for device with 6x14$\mu\textrm{m}$$^2$emitter size. To extract accurate equivalent parameters, the De-embedded method was applied for extraction of parasitic parameters and the calculation of circuit equations for intrinsic parameters. Based on the Load-pull method, power characteristics was simulated and measured to get the maximum output power of the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제15권11호
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• pp.939-945
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• 2002

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.711-714
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• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.351-351
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• 2010

Nanoscale patterning using an atomic force microscope tip induced scratching was systematically investigated in AI thin film on 4H-SiC. To identify the effects of the scratch parameters, including the tip loading force, scratch speed, and number of scratches, we varied each parameters and evaluated the major parameter which has intimate relationship with the scale of patterns. In this work, we present the successful demonstration of nano patterning of Al thin film on a 4H-SiC substrate using an AFM scratching and evaluated the scratch parameters on Al/4H-SiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.5-5
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• 2010

The depth of the object pointed by the laser beam is computed depending on the pixel position on the CCD There involved several number of internal and external parameters such as inter-pixel distance, focal length, position and orientation of the system components in the depth measurement error. In this paper, it is shown through the error sensitivity analysis of the parameters that the most important parameters in the sense of error sources are the angle of the laser beam and the inter pixel distance. Also, the calibration technique to minimize their effect for the depth computation is proposed.