• 선박안전
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• 제12권
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• pp.36-43
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• 2003

Fatigue life estimation by the theoretical stress concentration factors are, in general, considerably different from test results. And in calculating stress concentration factor, it is very difficult to consider actual geometry and material property which are the notch shapes, imperfections or defects of materials such as porosities inclusions and casting defects, etc. Therefore, the paper deals with the experimental method to find out the more exact stress concentration factors by measuring the strain distributions on each specimen by 3D-ESPI(Electronic Speckle Pattern Interferometry) System. Then the fatigue lives are compared between theoretical calculations using stress concentration factors determined by 3D-ESPI system and fatigue test results

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.286-286
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• 2009

According to previous report, aged sleeves for old transmission lines have various defect such as biased installation or corrosion of steel sleeve. These defects can cause serious accidents such as rapid increasing of sag or falling out of overhead conductor from sleeves. Moreover, the defects have been limited power capacity of transmission line. This paper study on mechanical and thermal behavior of ACSR $410mm^2$ conductor and sleeve with various defect model. The conductor has been aged artificially for 50 years. The detailed results were presented in the text.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• 한국농공학회논문집
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• 제52권5호
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• pp.69-76
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• 2010

The structural material with the highest possibility of new materials that will be used in the future construction field is fiber reinforced polymer. The current studies on FRP members by using such excellent material characteristics mostly focused on stability, composite problem, and durability of FRP members. The initially constructed FRP members secure excellent stability and durability compared to reinforced concrete and steel materials, but measures for defections during the periodical inspection, methods for detecting breakages, and maintenance and reinforcement are not insufficient. Accordingly, this study proposed a measurement system using the FRP sensor to evaluate the safety of the FRP modular box member, and applied the phased array ultrasonic technique to detect the defects and damage likely to occur during the performance period.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.285-288
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• 2004

탄화규소 기판의 에피 박막결함으로는 dislocation, micropipe, pin-hole 및 에피층 표면의 여러 가지 결함들이 있다. 이러한 결함들이 탄화규소 쇼트키 다이오드의 항복전압과 어떠한 상관관계가 존재하는지 알아 보기 위해 탄화규소 쇼트키 다이오드를 제작하고, 제작된 소자의 항복전압을 측정하였다. 에피 박막내의 결함 분포를 알아보기 위해 항복전압 측정후 KOH 용액을 이용한 SiC의 에칭을 수행하였으며, 제작된 여러소자들에 대해 항복전압의 분포도와 결함 분포도를 작성, 비교 관찰하였다.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1112-1117
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• 2006

The properties of LTCC green tape with addition of binder were investigated in order to understand an effects of binder on multilayer processing. A green sheet form was fabricated through tape casting method with the MLS-22 powder. The lamination density increased with increasing amount of binder and lamination pressure. With increasing amount of binder, the elongation of ceramic sheets increased but the tensile stress and air-permeability decreased. The addition of excessive binder is caused defects in the green sheet during via hole punching. The optimum condition of the via hole without defects was observed from amount of the binder 10 wt%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1992년도 춘계학술대회 논문집
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• pp.79-83
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• 1992

According to the variation of hydrostatic pressure on the central axis of deformable material, the V-shaped central bursting defect may be created on extrusion or drawing processes. The process factors whichaffect the generation of defects are die semi-angle, reduction ratio of cross-sectional area, friction factor, material properties and so on. The combination of these factors can determine the prossibility of defect creation and the shape of various round holes which have been created inside already. By the rigid plastic finite element method, this paper describes the observations of change in shape of a round hole with process conditions suchas die semi-angle, reduction ratio of cross-sectional area and friction factorat the unsteady state of axi-symmetrical extrusion process when the round hole is alreadyexisted inside the original billet, and also, the effects of process factors are investigated to prevent the possible defects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.501-504
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• 1999

In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.