• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.200-203
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• 2003

Ferroelectric europium-substitution $Bi_4Ti_3O_{12}$ thin films were fabricated by spin-coating onto a Pt/Ti/$SiO_2$/Si substrate. The $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) films have polycrystalline structure annealed at 700 C. We investigated that the influence of $Bi_4Ti_3O_{12}$ thin films by substituting for Bi ions with Bi ions using X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the XPS measurement, it was suggested that the stability of the metal-oxygen octahedral should be related to substitute for Bi ions with Eu ions at annealed $800^{\circ}C$. The BET thin films showed a large remanent polarization (2Pr) of $60.99C/cm^2$ at an applied voltage of 10 V. The BET thin films exhibited no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 50 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.969-975
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.

• Journal of Energy Engineering
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• v.25 no.2
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• pp.65-78
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• 2016

Initial studies of the photocatalyst has been developed from the field relating to the conversion and storage of solar energy. Recently, the study of the various organic decomposition compound and the water purification and waste water treatment by ultraviolet irradiation in the presence of light or a photocatalyst are being actively investigated. In addition, the oxidized material-carbon nanotubes, graphene-nanocomposites have been studied. Such a complex is suitable as a material constituting the solar cells and photolysis nanoelectronics, including the flexible element due to thermal and chemical stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.320-320
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• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.310-314
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• 2020

Although waste oil derived fuel (WDF) production technology was developed under a government initiative ~10 years ago, it became stagnant owing to the small size of participating companies, residents' rejection of foul odor, and the nature of the technology for recycling waste that was avoided. However, this subject is under the spotlight again because of recent developments, such as garbage crisis. In particular, plastic is the most difficult waste to dispose of, with more than 4 million tons of plastic waste produced every year according to statistics from the Ministry of Environment. The most effective method for treating plastic waste is to produce WDF through low temperature thermal decomposition. The WDF includes several volatile ingredients that mostly limit the use of fuel for boilers, owing to safety concerns. In particular, flash point is legally stipulated because of secondary contamination in the distribution process and the risk of fire and explosion. It is required that external shipments (distribution) should be maintained in the range of at least 30~60℃ (excluding explosion prevention facilities) for diesel power generation. Therefore, this study seeks to find the flash point that is best suited to WDFs produced from plastic waste.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.485-488
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• 2004

1M, 2M 황산망간 수용액에서 25회 dipping하여 대기중 $450^{\circ}C$에서 1시간동안 열분해법으로 Mn 산화물을 형성시켜 Mn $oxide/IrO_2/Ti$ 전극을 제조하였다. 제조된 Mn $oxide/IrO_2/Ti$ 전극은 XRD를 통하여 MnO의 결정구조를 가지는 것을 확인하였다. 또한 전극 표면은 열분해법으로 발생하는 가스에 의해 미소 균열이 형성되어 있었다. dipping 횟수가 증가할수록 피복되는 Mn 산화물의 무게는 감소하였고, 이것은 $450^{\circ}C$에서의 계속적인 열처리에 의해 열분해되어 제거되는 가스로 인해 무게가 감소됨을 알 수 있었다. 황산망간 수용액의 농도가 높으면 형성되는 Mn 산화물의 무게도 증가하였다. 황산망간 수용액에서 25회까지 dipping을 한 후 전기비저항의 변화는 초기 Mn 산화물이 형성되는 경우에는 비저항이 증가하다가, 일정 횟수 이상에서는 감소함을 알 수 있었다. 또한 황산망간 수용액의 농도가 클수록 비저항이 증가하는 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.23-26
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• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.46-55
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• 2002

10mo1% Gd$_2$O$_3$ doped CeO$_2$ fine powders were synthesized by the oxalate coprecipitation method. The characteristics and sintering behavior of fine powders were investigated. The oxalate precipitates had the specific surface area of 150$m^2$/g, and appeared to be fine and spherical primary particles with a size of approximately 5.5nm. The decomposition of the precipitates occurred from a temperature around 30$0^{\circ}C$ and it was completed below 40$0^{\circ}C$, resulted in the formation of the oxide. The calcination temperature of the fine powders was suitable at 77$0^{\circ}C$. By introducing fine powders washed with alcohol and ball-milling process after calcination, the sintered body was possible to attain the value of 97% of the theoretical density at low temperature of 130$0^{\circ}C$