• 한국식품영양과학회지
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• 제22권5호
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• pp.643-649
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• 1993

대두의 조성은 다른 두류나 곡류와는 달리 35~40%의 단백질, 15~20%의 유지 및 20~25%의 당을 함유하고 있다. 예로부터 대두는 두부, 간장, 된장과 같은 전통식품의 원료로써 넓게 쓰여져왔다. 초원심분리에 의한 대두 단백의 성분은 침강정수에 의해 2, 7, 11 및 15S의 4가지 주요한 성분으로 나타난다. 저당잔백질 중 중요한 2성분인 7S 및 11S globulin은 많은 연구자들에게 의해 분리되고, 특성이 알려졌다. 미생물 효소에 의해 제조된 응고물은 금속이온 및 산처리에 의해 만들어진 것보다 훨씬 조밀한 구조를 나타내었다. 효소작용으로 얻어진 curd는 식품재료로써 개발되어지고, 식품가공분야에서도 폭넓게 이용될 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.248-249
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• 2007

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were about -3.7%/K.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.180-181
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• 2006

CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.495-500
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• 2009

The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.

• Journal of the Korean Wood Science and Technology
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• 제43권2호
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• pp.177-185
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• 2015

The goal of this study is to evaluate the limitation of ASTM D 198 bending and ASTM D 3044 in determination of elastic modulus and shear modulus. Different material properties and span to depth ratios were used to analyze the effects of material property and testing conditions. The ratio of true elastic modulus to apparent elastic modulus evaluated from ASTM D 198 bending sharply decreased with increment of span to depth ratio. Shear modulus evaluated from ASTM D 198 bending decreased with increment of depth, whereas shear modulus evaluated from ASTM D 3044 was hardly influenced by increment of depth. Poisson's ratio influenced shear modulus from ASTM D 198 bending but did not influence shear modulus from ASTM D 3044. Different shearing factor was obtained for different depths of beams to correct shear modulus obtained from ASTM D 198 bending equivalent to shear modulus from theory of elasticity. Equivalent shear modulus of materials could be obtained by applying different shearing factors associated with beam depth for ASTM D 198 bending and correction factor for ASTM D 3044.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Steel and Composite Structures
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• 제42권5호
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• pp.699-710
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• 2022

This work presents a comprehensive study on the surface energy effect on the axial frequency analyses of AFGM nanorods in cylindrical coordinates. The AFGM nanorods are considered to be thin, relatively thick, and thick. In thin nanorods, effects of the inertia of lateral motions and the shear stiffness are ignored; in relatively thick nanorods, only the first one is considered; and in thick nanorods, both of them are considered in the kinetic energy and the strain energy of the nanorod, respectively. The surface elasticity theory which includes three surface parameters called surface density, surface stress, and surface Lame constants, is implemented to consider the size effect. The power-law form is considered for variation of the material properties through the axial direction. Hamilton's principle is used to derive the governing equations and boundary conditions. Due to considering the surface stress, the governing equation and boundary condition become inhomogeneous. After homogenization of them using an appropriate change of variable, axial natural frequencies are calculated implementing harmonic differential quadrature (HDQ) method. Comprehensive results including effects of geometric parameters and various material properties are presented for a wide range of boundary condition types. It is believed that this study is a comprehensive one that can help posterities for design and manufacturing of nano-electro-mechanical systems.