• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.755-759
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• 2008

For the development of a new white dielectric layer in plasma display panel, different $TiO_2$ types as a filler was add to the $Bi_2O_3$-BaO-ZnO glass matrix. The reflectance and dielectric constant of dielectric have been investigated as a function of the mixing content (rutile and anatase), and sintering temperature. The reflectance of dielectric sintered at the 520$^{\circ}C$ appeared most highly and suitable in terms of the adhesion and reflectance of the soda-lime glasses. Also, the thermal expansion coefficient of dielectric was found to be $85.6\times10^{-7}/K$, which was similar to that of the soda-lime glasses. Especially, the dielectric constants were not increased with increasing of $TiO_2$ filler contents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.239-240
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• 2008

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $400^{\circ}C$ were 39.6, with a dielectric loss of 0.255, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $400^{\circ}C$ were about -3.15%/K.

• 대한기계학회논문집A
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• 제27권10호
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• pp.1667-1675
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• 2003

This paper has considered the calculation of lateral stiffness of radial tire's sidewall, which consists of cord stiffness and rubber sheet stiffness, by using the material constants of rubber compounds of tire. We have suggested and illustrated how to calculate the rubber sheet lateral stiffness by considering the following aspects. First, the rubber sheet consists of various kinds of rubber compounds with different thickness along the sidewall in the radial direction. Secondly, equivalent Young's modulus of the rubber sheet can be calculated by using available experimental data of rubber compounds. The present method enables us to divide the calculation domain as many as we want, which can reduce numerical error in the calculation of geometrical and mechanical properties. We have illustrated the calculation by using the data of the radial tire for passenger car of P205/60R15.

• Coupled systems mechanics
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• 제2권1호
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• pp.1-22
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• 2013

Under thermal environment, Magneto-Electro-Elastic (MEE) material exhibits pyroelectric and pyromagnetic effects which can be used for enhancing the performance of MEE sensors. Recently studies have been published on material constants such as pyroelectric constant and pyromagnetic constant for magneto-electro-thermo-elastic smart composite. Hence, the main aim of this paper is to study the pyroelectric and pyromagnetic effects on behavior of MEE plate under different boundary conditions subjected to uniform temperature. A numerical study is carried out using eight noded brick finite element under uniform temperature rise of 100 K. The study focused on the pyroelectric and pyromagnetic effects on system parameters like displacements, thermal stresses, electric potential, magnetic potential, electric displacements and magnetic flux densities. It is found that, there is a significant increase in electric potential due to the pyroelectric and pyromagnetic effects. These effects are visible on electric and magnetic potentials when CFFC and FCFC boundary conditions are applied. Additionally, the pyroelectric and pyromagnetic effects at free edge is dominant (nearly thrice the value in CFFC in comparison with FCFC) than at middle of the plate. This study is a significant contribution to sensor applications.

• 한국음향학회지
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• 제14권5호
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• pp.83-88
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• 1995

압전 세라믹의 재료 정수 규명의 일반적인 방댄은 어떤 형상과 분극 방향을 가진 진동체의 동특성을 이용하는 것이다. 본 논문에서는 압전 세라리의 복소 재료 정수극 규명하는 방법을 제시하였다. 이 방법은 이론적인 이미턴스 값과 실험으로 측정된 값과의 오차가 최소화 되도록 하는 비선형 최적화 기법을 사용하여 손실이 고려된 복소 압전 재료 정수를 규명하는 것이다. 재료 정수 규명을 위하여 이미턴스(Immittance)를 공진 주파수 근처와 저주파 영역을 포함하여 측정한 값을 동시에 활용하였다. 본 논문에서 제안된 방법을 검증하기 위해 PZT4 세라믹의 복소 재료 정수를 실험적으로 규명하였다.

• 동력기계공학회지
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• 제21권2호
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• pp.14-19
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• 2017

The corrosion characteristics of Al-Si-Mg alloy were investigated in $O_2$ and $H_2S/H_2$ environments at high temperature. The weight gain and the reaction rate constant of the Al-Si-Mg alloy were measured in the oxygen and hydrogen sulfide environments at 773K. The weight gain of Al-Si-Mg alloy was showed parabolic increase in the oxygen and hydrogen sulfide environments. The reaction rate constants were confirmed to be $1.45{\times}10^{-4}mg^2cm^{-4}sec^{-2}$ in the oxygen environment and $6.19{\times}10^{-4}mg^2cm^{-4}sec^{-2}$ in the hydrogen sulfide environment respectively. As a result of XPS analysis on the specimen surface, $Al_2O_3$ and MgO compounds were detected in oxygen environment and $Al_2(SO_4)_3$ sulfate was detected in the hydrogen sulfide environment. Corrosion rate of Al-Si-Mg alloy was about 4.3 times faster in hydrogen sulfide environment than oxygen environment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.42-45
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• 1992

In this study, the structural, dielectric and electrical properties of $0.85Pb(Zn_{1/3}Nb_{2/3})O_3-0.1BaTiO_3-0.05PbTiO_3$ ceramics were investigated with respect to the variations of $La_2O_3$ addition amount. The specimen with 0.2 [wt%] $La_2O_3$ addition amount, which has the coupling constants with the value of $k_p$=44.8[%]. $k_{31}$=25.4[%] and the piezoelectric constant with $d_{31}=100{\times}10^{-12}$[C/N] respectively, exhibits the relatively good values in the applications of electrostriction actuators.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.