• Title/Summary/Keyword: Material Constants

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Structure and Dielectric properties of PST Thin Films with Pb/Sr ratio prepared by Sol-gel method for Phase shifter (Phase shifters 응용을 위한 Sol-gel 법으로 제작된 PST 박막의 Pb/Sr 비에 따른 구조적, 유전적 특성)

  • Lee, Cheol-In;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.794-797
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    • 2004
  • The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

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Dielectric Characteristics on Filler Content and Sintering Temperature in Pb-Free White Dielectric Layer (Pb-Free 백색유전체에서 필러함량과 소성온도에 따른 유전체 특성)

  • An, Yong-Tae;Choi, Byung-Hyun;Ji, Mi-Jung;Lee, Jung-Min;Kim, Hyun-Sun;Jung, Kyung-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.755-759
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    • 2008
  • For the development of a new white dielectric layer in plasma display panel, different $TiO_2$ types as a filler was add to the $Bi_2O_3$-BaO-ZnO glass matrix. The reflectance and dielectric constant of dielectric have been investigated as a function of the mixing content (rutile and anatase), and sintering temperature. The reflectance of dielectric sintered at the 520$^{\circ}C$ appeared most highly and suitable in terms of the adhesion and reflectance of the soda-lime glasses. Also, the thermal expansion coefficient of dielectric was found to be $85.6\times10^{-7}/K$, which was similar to that of the soda-lime glasses. Especially, the dielectric constants were not increased with increasing of $TiO_2$ filler contents.

Structural and Electrical Properties of $V_{1.85}W_{0.15}O_5$ Thin Films for the Uncooled Infrared Detector (비냉각 적외선 검출기용 $V_{1.85}W_{0.15}O_5$ 박막의 구조적, 전기적 특성)

  • Nam, Sung-Pill;Ryu, Ki-Won;Lee, Sung-Gap;Bea, Seon-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.237-238
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    • 2008
  • The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

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Electrical Properties of $V_{1.9}W_{0.1}O_5$ Thin Films with Annealing Temperature (열처리 온도에 따른 $V_{1.9}W_{0.1}O_5$ 박막의 유전특성)

  • Nam, Sung-Pill;Kim, Jae-Sik;Lee, Sung-Gap;Bea, Seon-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.239-240
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    • 2008
  • The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $400^{\circ}C$ were 39.6, with a dielectric loss of 0.255, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $400^{\circ}C$ were about -3.15%/K.

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Calculation of Sidewall Lateral Stiffness of a Radial Tire Using Material Properties of Rubber Compounds (고무배합물의 물성을 이용한 레이디얼 타이어의 사이드월 횡강성 계산)

  • Kim, Yong-Woo;Kim, Jong-Guk
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.10
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    • pp.1667-1675
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    • 2003
  • This paper has considered the calculation of lateral stiffness of radial tire's sidewall, which consists of cord stiffness and rubber sheet stiffness, by using the material constants of rubber compounds of tire. We have suggested and illustrated how to calculate the rubber sheet lateral stiffness by considering the following aspects. First, the rubber sheet consists of various kinds of rubber compounds with different thickness along the sidewall in the radial direction. Secondly, equivalent Young's modulus of the rubber sheet can be calculated by using available experimental data of rubber compounds. The present method enables us to divide the calculation domain as many as we want, which can reduce numerical error in the calculation of geometrical and mechanical properties. We have illustrated the calculation by using the data of the radial tire for passenger car of P205/60R15.

Pyroelectric and pyromagnetic effects on behavior of magneto-electro-elastic plate

  • Kondaiah, P.;Shankar, K.;Ganesan, N.
    • Coupled systems mechanics
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    • v.2 no.1
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    • pp.1-22
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    • 2013
  • Under thermal environment, Magneto-Electro-Elastic (MEE) material exhibits pyroelectric and pyromagnetic effects which can be used for enhancing the performance of MEE sensors. Recently studies have been published on material constants such as pyroelectric constant and pyromagnetic constant for magneto-electro-thermo-elastic smart composite. Hence, the main aim of this paper is to study the pyroelectric and pyromagnetic effects on behavior of MEE plate under different boundary conditions subjected to uniform temperature. A numerical study is carried out using eight noded brick finite element under uniform temperature rise of 100 K. The study focused on the pyroelectric and pyromagnetic effects on system parameters like displacements, thermal stresses, electric potential, magnetic potential, electric displacements and magnetic flux densities. It is found that, there is a significant increase in electric potential due to the pyroelectric and pyromagnetic effects. These effects are visible on electric and magnetic potentials when CFFC and FCFC boundary conditions are applied. Additionally, the pyroelectric and pyromagnetic effects at free edge is dominant (nearly thrice the value in CFFC in comparison with FCFC) than at middle of the plate. This study is a significant contribution to sensor applications.

An Identification Method for Complex-Valued Material Properties of Piezoelectric Ceramics (압전 세라믹의 복소 재료 정수 규명)

  • Joh, Chee-Young;Seo, Hee-Seon;Kim, Dae-Hwan
    • The Journal of the Acoustical Society of Korea
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    • v.14 no.5
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    • pp.83-88
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    • 1995
  • The common practice for the identification of piezoelectric properties is based on the use of immittance of a resonator with a certain geometry and poling direction. In this paper, a new method is suggested to identify the complex-valued piezoelectric material constants. This method Is based on the minimization of differences between the analytical immittance and the experimental measurement of resonator. Non-linear minimization problems are formulated to find out the unknown properties relevant to the resonators. The immittance data used for identification are measured at a number of frequencies which cover the vicinity of resonance frequency and the low frequency region. To illustrate the proposed technique, the complex-valued coefficients are identified for a typical PZT4 ceramic composition.

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High Temperature Corrosion Characteristics of Al-Si-Mg Alloy in O2 and H2S/H2 Environments (Al-Si-Mg 합금의 산소 및 황화수소 환경에서의 고온부식 특성)

  • Lee, Yeong-Hwan;Son, Young-Jin;Lee, Byung-Woo
    • Journal of Power System Engineering
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    • v.21 no.2
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    • pp.14-19
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    • 2017
  • The corrosion characteristics of Al-Si-Mg alloy were investigated in $O_2$ and $H_2S/H_2$ environments at high temperature. The weight gain and the reaction rate constant of the Al-Si-Mg alloy were measured in the oxygen and hydrogen sulfide environments at 773K. The weight gain of Al-Si-Mg alloy was showed parabolic increase in the oxygen and hydrogen sulfide environments. The reaction rate constants were confirmed to be $1.45{\times}10^{-4}mg^2cm^{-4}sec^{-2}$ in the oxygen environment and $6.19{\times}10^{-4}mg^2cm^{-4}sec^{-2}$ in the hydrogen sulfide environment respectively. As a result of XPS analysis on the specimen surface, $Al_2O_3$ and MgO compounds were detected in oxygen environment and $Al_2(SO_4)_3$ sulfate was detected in the hydrogen sulfide environment. Corrosion rate of Al-Si-Mg alloy was about 4.3 times faster in hydrogen sulfide environment than oxygen environment.

An Effect on the Structural, Electrical Characteristis of PZN-BT-PT Ceramics according to the Variations of $La_2O_3$ Additon Amount ($La_2O_3$의 첨가가 PZN-BT-PT 세라믹스의 구조적, 전기적 특성에 미치는 영향)

  • Park, Sung-Hwan;Yoon, Hyen-Sang;Paik, Dong-Soo;Lee, Doo-Hee;Park, Chang-Yub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.42-45
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    • 1992
  • In this study, the structural, dielectric and electrical properties of $0.85Pb(Zn_{1/3}Nb_{2/3})O_3-0.1BaTiO_3-0.05PbTiO_3$ ceramics were investigated with respect to the variations of $La_2O_3$ addition amount. The specimen with 0.2 [wt%] $La_2O_3$ addition amount, which has the coupling constants with the value of $k_p$=44.8[%]. $k_{31}$=25.4[%] and the piezoelectric constant with $d_{31}=100{\times}10^{-12}$[C/N] respectively, exhibits the relatively good values in the applications of electrostriction actuators.

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Effects of Different Dopants(B, AI, Ga, In) on the Properties of Transparent conducting ZnO Thin Films (B, Al, Ga, In의 도핑물질이 투명 전도성 ZnO 박막의 특성에 미치는 영향)

  • No, Young-Woo;Cho, Jong-Rae;Son, Se-Mo;Chung, Su-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.242-248
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    • 2008
  • The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.