• 제목/요약/키워드: Mask material

검색결과 266건 처리시간 0.03초

CAD for Detection of Brain Tumor Using the Symmetry Contribution From MR Image Applying Unsharp Mask Filter

  • Kim, Dong-Hyun;Ye, Soo-Young
    • Transactions on Electrical and Electronic Materials
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    • 제15권4호
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    • pp.230-234
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    • 2014
  • Automatic detection of disease helps medical institutions that are introducing digital images to read images rapidly and accurately, and is thus applicable to lesion diagnosis and treatment. The aim of this study was to apply a symmetry contribution algorithm to unsharp mask filter-applied MR images and propose an analysis technique to automatically recognize brain tumor and edema. We extracted the skull region and drawed outline of the skull in database of images obtained at P University Hospital and detected an axis of symmetry with cerebral characteristics. A symmetry contribution algorithm was then applied to the images around the axis of symmetry to observe intensity changes in pixels and detect disease areas. When we did not use the unsharp mask filter, a brain tumor was detected in 60 of a total of 95 MR images. The disease detection rate for the brain was 63.16%. However, when we used the unsharp mask filter, the tumor was detected in 87 of a total of 95 MR images, with a disease detection rate of 91.58%. When the unsharp mask filter was used in the pre-process stage, the disease detection rate for the brain was higher than when it was not used. We confirmed that unsharp mask filter can be used to rapidly and accurately to read many MR images stored in a database.

HVPE(Hydride Vapor Phase Epitaxiy) 성장법으로 Ti metal mask를 이용한 GaN 성장연구 (GaN Grown Using Ti Metal Mask by HVPE(Hydride Vapor Phase Epitaxiy))

  • 김동식
    • 전자공학회논문지 IE
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    • 제48권2호
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    • pp.1-5
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    • 2011
  • HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

전자빔과 무반사층이 없는 크롬 마스크를 이용한 나노그레이팅 사출성형용 고종횡비 100nm 급 니켈 스템퍼의 제작 (Fabrication of High Aspect Ratio 100nm-scale Nickel Stamper Using E-beam Lithography for the Injection molding of Nano Grating Patterns)

  • 서영호;최두선;이준형;제태진;황경현
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.978-982
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    • 2004
  • We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

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유아동 마스크 선호도 및 착용 만족도 분석에 관한 연구 (A Study on Design Preference and Wearing Satisfaction for Children's Masks)

  • 김지은;이은영
    • 한국의류산업학회지
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    • 제25권1호
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    • pp.82-91
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    • 2023
  • The children who are part of this study are compelled to wear masks at educational facilities for an extended period of time as they continue to be exposed to Asian dust, fine dust, and COVID-19. However, use of masks is currently causing them a lot of inconvenience. This study aimed to gather basic data for the development of a mask that is suitable and comfortable for children to wear. A total of 331 children aged 1 to 9 were investigated through their parents in terms of their lifestyle, mask wearing and purchasing status, mask preferences, mask inconvenience, and mask improvement. According to the survey on mask use, the proportion of children aged 1-3 years old and wearing ultra-small/XS masks, 4-6 year olds wearing small/S, and 7-9 year olds wearing small/S was the highest. More than 80% of children were wearing masks with a standard filter of KF80 or higher. The purchase criteria for children's masks were found to be excellent in terms of wearing comfort and meeting the filter standards. According to the survey on inconvenience of wearing masks, the majority of those surveyed expressed the need to develop children's masks of different sizes. Furthermore, they experienced various kinds of inconveniences from adult masks, such as the material quality and length of earring bands; it was deduced that these aspects need to be taken care of. The vertical folding type was the most popular in the mask design for children. Children have to wear masks for a prolonged period of time, but they are experiencing lot of inconvenience, which need to be addressed.

Two Dimensional Gold Nanodot Arrays Prepared by Using Self-Organized Nanostructure

  • Jung Kyung-Han;Chang Jeong-Soo;Kwon Young-Soo
    • Journal of Electrical Engineering and Technology
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    • 제1권2호
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    • pp.246-250
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    • 2006
  • Highly ordered gold nanodot arrays have been successfully obtained by vacuum evaporation using an anodic aluminum oxide (AAO) as a shadow mask. An AAO mask with the thickness of 300 um was prepared through an anodization process. The structure of the nanodot arrays was studied by a field- emission scanning electron microscope (FE-SEM) equipped with an energy dispersive spectrometer (EDS). A tapping mode atomic force microscope (AFM) was employed for studies of height and phase feature. The nanodot arrays were precisely reproduced corresponding to the hexagonal structure of the AAO mask in a large area. In the gold nanodot arrays, the average diameter of dots is approximately the same as the AAO pore size in the range from 70 um to 80 nm and 100 nm center-to-center spacing. EDS analysis indicated that the gold dots were almost entirely consisted of gold, a highly demanded material.

상보 데이터와 이진 진폭 마스크를 이용한 새로운 체적 홀로그램 암호화 (A Novel Volume Hologram Encryption Using Complementary Data and Binary Amplitude Mask)

  • 김현;김도형;이연호
    • 정보저장시스템학회논문집
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    • 제1권2호
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    • pp.143-149
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    • 2005
  • In this paper we propose a novel volume hologram encryption system with binary amplitude masks rather than phase masks, in which volume holograms can be securely recorded against the attacks by a third party. In our system, the encryption is done by multiplexing two volume holograms in such a way that an original binary data page is first stored as a volume hologram by interference with a binary amplitude mask and then the complementary data page is stored as another volume hologram by interference with the complementary binary amplitude mask over the first hologram. The operation principle of our system is explained with the well-known theory of recording and reading a volume hologram in a photorefractive material and the experimental results are presented. Experimental data show that our encryption system is protected from blind decryptions by randomly-generated incorrect amplitude masks.

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The Analysis of Three-dimensional Oxidation Process with Elasto-viscoplastic Model

  • Lee Jun-Ha;Lee Hoong-Joo
    • Transactions on Electrical and Electronic Materials
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    • 제5권6호
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    • pp.215-218
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    • 2004
  • This paper presents a three-dimensional numerical simulation for thermal oxidation process. A new elasto-viscoplastic model for robust numerical oxidation simulation is proposed. The three-dimensional effects of oxidation process such as mask lifting effect and corner effects are analyzed. In nano-scale process, the oxidant diffusion is punched through to the other side of the mask. The mask is lifted so the thickness of oxide region is greatly enhanced. The compressive pressure during the oxidation is largest in the mask corner of the island structure. This is because the masked area near the corner is surrounded by an area larger than the others in the island structure. This stress induces the retardation of the oxide growth, especially at the masked corner in the island structure.

팬데믹 영향 하의 패션 마스크 디자인 경향 및 의미 분석 (Analysis of trends and meanings of fashion masks under the pandemic influence)

  • 이홍연;임은혁
    • 복식문화연구
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    • 제29권3호
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    • pp.406-421
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    • 2021
  • During the COVID-19 pandemic, the obligatory wearing of masks has led to increased consumer demand and the diversification of mask design. Accordingly, it is necessary to understand the inner meaning and characteristics of masks in the pandemic situation. Therefore, the purpose of this research is to analyze the characteristics of fashionable masks and their new cultural meaning under the COVID-19 pandemic. This research is based on literature review and empirical research. Drawing on an investigation of the historical evolution of masks and their transition under the pandemic (exhibiting differences in mask culture among countries and regions), this study analyzed 54 distinctive fashion masks designed by fashion brands and influencers that appeared from January 2020 to January 2021. The characteristics of fashion masks identified under the influence of the pandemic are as follows: Message delivery on political issues and human rights; psychological defense and expression of individuality; and conspicuous display via luxurious materials and luxury brand logos; moreover, the design of the mask uses the same material, color, pattern, decoration, and other methods as clothing to achieve the overall style. Over the course of the pandemic (and even in post-pandemic lifestyle), fashion masks are becoming more diversified conveying new social and cultural meanings.

Hexamethyldisilane/HCl/$H_{2}$ gas system을 이용한 Si 기판에서 $\beta$-SiC의 선택적 화학기상증착 (Selective chemical vapor deposition of $\beta$-SiC on Si substrate using hexamethyldisilane/HCl/$H_{2}$ gas system)

  • 양원재;김성진;정용선;오근호
    • 한국결정성장학회지
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    • 제9권1호
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    • pp.14-19
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    • 1999
  • Hexamethyldisilane$(Si_{2}(CH_{3})_{6})$의 single precursor를 사용하여 화학기상증착법으로 $1100^{\circ}C$에서 Si 기판의에 $\beta$-SiC 막을 증착시켰다. 증착과정 중 hexamethyldisilane/$H_{2}$ gas system에 HCI gas를 도입하여 mask 재료에 의해 부분적으로 덮여져 있는 Si 기판에서 SiC 증착의 선택성을 조사하였다. Si 기판과 mask 재료에서 SiC 증착의 선택성을 증진시키기 위해 출발물질과 HCI gas의 공급 방법을 변화시켰다. 결국, HCI gas를 도입함으로서 SiC 증착의 선택성은 증진되었고 펄스 형태로의 gas 공급 방법은 선택성을 향상시키는데 효율적이었다.

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