• Journal of English Language & Literature
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• v.56 no.2
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• pp.237-253
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• 2010

In Christopher Marlowe's Cambridge days in the 1580s, the British forward wits were engaged in the curious pursuit of magic and occult philosophy in order to discover the mystery of things. Magic, together with judiciary astronomy, astrology, mathematics, and logic, was one of the most practical disciplines. Marlowe, Shakespeare, and Jonson demonstrate their deep interest in magic and its language of spell and charms in the light of their analogical application to the alchemical theatre. As Shakespeare says that the poet, the lover, and the madman are of the same because they give forms to airy nothing, a magical illusion is, for the three playwrights, similar to the theatrical illusion in that both magic and theatre work in and by a language and both give us sportive pleasures through the deceptio visus. However, while Jonson is rather puritanically antagonistic to the illusive language of alchemy and magic, Marlowe and Shakespeare are attracted to the rapturous nature of the absolute language of magic. Doctor Faustus' indulgence in magic stands for the Marlovian aspiration for the absolute language which allows no discrepancy between thinking and willing, conceiving and actualizing. His uses of spells, charms, anagrams, and magic books are transformed and translated in the play into an alchemical theatre. Faustus is dependant on and bound by his books of magic, as is the actor on the stage. Faustus is the poet condemned from the beginning. Though he is mistakenly thinking that it is he himself that manipulates Mephostophilis the magical agent, it is otherwise. Faustus is a shadow or an actor in the Elizabethan language. He remains a farcical figure during the twenty-four years which are given to him for his sensual dalliance. Marlowe never forgets through his farcical clowning to satirize such Catholic rituals as exorcism and benediction for their illusive theatricalism. The sports of Faustus' playacting and play-directing rise at the last hour to the height of a tragedy. Ironically Marlowe the playwright succeeds as a tragedian at the point where Faustus fails as a magician.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.99-100
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• 2006

$BF_2$ molecule 이온주입은 ULSI기술에 있어서 ultra shallow 정합형성을 위해고 P-MOS를 제작하는데 매우 유용한 기술이다. 주입된 boron 이온의 분포를 위해서 $0.05{\mu}m$ 나노스케일의 마스크사이즈의 패턴에 이온 주입한 결과를 일차원적인 분포해석을 위해서 UT-Marlowe tool을 사용하여 gauss 및 pearson 모델의 도핑분포를 나타내었다. 또한 이 데이터를 TSUPREM4에 적용하여 이차원적인 도핑분포와 열처리 후에 boron의 gauss 및 pearson의 모델의 도핑분포를 본 논문에 나타내었다.

• Korean Journal of Psychosomatic Medicine
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• v.11 no.1
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• pp.60-68
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• 2003

Objectives: The purpose of this study was to develop a Korean version of the Levels of Emotional Awareness Scale(LEAS-K) and to examine its validity and reliability. Methods: LEAS-K was developed from translating original LEAS into Korean. The subjects were 476 Korean medical students(322 males and 154 females). The internal consistency was evaluated with the Cronbach's alpha coefficients and 40 protocols were independently scored by two raters to confirm interrater reliability. Additionally, a Korean version of 20-item Toronto Alexithymia Scale(TAS-20K), Korean versions of the Openness to Experience Inventory(OE), the Marlowe-Crowne Scale (MCS), the Bendig short form of the Taylor Manifest Anxiety Scale(TMAS) and the Emotional Expressivity Scale(EES) were rated to evaluate concurrent validity. Results: The internal consistency measured by Cronbach's alpha was 0.81 and interrater reliability was high{r(40)=0.99}. Correlation coefficients for concurrent validity were nonsignificant with TMAS and EES. LEAS-K correlated significantly with TAS-20K{r(476)=-0.10, p<0.05}, OE {r(476)=0.10, p<0.05} and MCS {r(476)=0.10, p<0.05}. Conclusion: LEAS-K was demonstrated to have high reliability and validity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• The Korean Nurse
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• v.35 no.1
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• pp.81-93
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• 1996

This descriptive study was done to identify the relationship between coping style and trait anxiety in patients undergoing cardiac catheterization. The subjects selected were 69 patients who were scheduled for cardiac catheterization in S hospital from , November 1st, 1994 to May 30th, 1995. Data collection was done using Spielberger's Trait Anxiety Scale, Bendig's Short Form of the Manifest Anxiety Scale, Crowne & Morlowe's Social Desirability Scale, Millers Behavioral Style Scale, Information Subscale of Krantz Health Opinion Survey and Visual Analog Scale about informaton seeking behavior. The summary of the findings is as follows : 1. No significant relationship was found between the general characteristics of age, sex, marital status, level of education and occupation, and the variables coping style and trait anxiety. 2. The mean of trait anxiety scores for the Spielberger Scale was 46.68. It is slightly above average. The subjects were classified as to personality type: truely low anxious 25 (36.2%), highly anxious 25 (36.2%), and repressing 16 (23.2%), using a combination of scores from the Bendig Short Form Anxiety Scale and the Crowne Marlowe Social Desirability Scales. 3. No significant relationship was found between Spielberger s trait anxiety and Bendig's personality type. 4. Each subject's preference for either monitor or blunter coping strategy was assessed via the Miller Behavioral Style Scale. The proportion of Monitors (47.8%) and Blunters (52.2%) among the subjects were similar. The means of preference for information measured on the Krantz's subscale and Visual Analog Scale were 4.18, 80.79 respectively. Because these scores appeared above average, subjects tended to be higher seeker an information rather than avoiding it. 5. There was no significant relationship between Miller's Behavioral Style and Spielberger's trait anxiety. 6. There was no significant relationships between Bendig's personality types. and the preference on information of Krantz's and Visual Analog Scale. and Miller's Behavioral Styles. But 56.0% of the subjects who were highly anxious used Monitor strategy for coping. Findings from the current study do not permit any relationship inferences between coping style and trait anxiety. Patients undergoing cardiac catheterization must receive interventions on stress reduction because the cardiac 'catheterization creats a situation of psychological stress. Therefore, the nursing intervention of providing information about cardiac catheterization have to be given based on each patient's coping style and on their trait anxiety.