• 제목/요약/키워드: Magnetron Sputtering

검색결과 2,872건 처리시간 0.032초

TFT LCD 제조용 대면적 Magnetron Sputtering 장치 설계와 Al 성장막 특성 조사 (Design of a Large Magnetron Sputtering System for TFT LCD and Investigation of Sputtered AI Film Properties)

  • 유운종
    • 한국진공학회지
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    • 제2권4호
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    • pp.480-485
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    • 1993
  • Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

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펄스 마그네트론 스퍼터링 음극의 열전달 해석 (Heat Transfer Analysis of a Pulse Magnetron Sputtering Cathode)

  • 주정훈
    • 한국표면공학회지
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    • 제41권6호
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    • pp.274-278
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    • 2008
  • 3-dimensional numerical analysis for a rectangular magnetron cathode model is done to predict cooling characteristics of high power sputtering system for ZnO deposition. It includes cooling channel design, heat transfer analysis of a target, bonding layer and backing plate. In order to model erosion profiles of a target, ion current density distribution from 3D Monte Carlo simulation is used to distribute total sputtering power to 5 discrete regions. At 3 kW of sputtering power and cooling water flow of 1 liter/min at $10^{\circ}C$, the maximum surface temperature was $45.8^{\circ}C$ for a flat new target and $156^{\circ}C$ for a target eroded by 1/3 of its thickness, respectively.

고주파 마그네트론 스퍼터장치로 증착한 Ti 박막의 특성에 관한 연구 (A Study on the Characteristics of Ti Films Deposited by a DC Magnetron Sputtering Assisted with RF Voltage)

  • 배창환;이주희;한창석
    • 열처리공학회지
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    • 제22권3호
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    • pp.143-148
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    • 2009
  • We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

Two-Dimensional DC Magnetron Sputtering Simulator for Cylindrical Rotating Target

  • 김진석;이정열;김민경;이해준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.454-454
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    • 2012
  • Magnetron sputtering에서, 영구자석의 자속은 target 표면 가까이에 전자를 구속한다. 구속된 전자는 Ar중성기체와 충돌하여 Ar이온을 발생시킬 수 있으므로, target 근처에서의 플라즈마 밀도를 높여, 자석이 없을 때보다 낮은 압력 또는 낮은 전압에서 방전할 수 있다. 구속 전자가 밀집된 공간에서 sputtering 현상이 주로 발생하기 때문에, planar target을 사용할 경우에는 target이 불균일하게 식각되어 target의 사용효율이 좋지 못하다. 이에 대한 한 가지 대안은 target을 원통형으로 만들어 회전시키는 것이다. Cylindrical target 의 내부에 위치한 영구자석은 고정시키고, target만을 회전시키면 비교적 균일하게 식각되므로 target의 사용효율을 높일 수 있다. 본 연구에서는 기존의 planar target에 대한 Particle-In-Cell Simulation을 Cylindrical target 에 적용시키기 위한 방법을 알아본다. 또한, 개발된 Simulator를 이용하여, Sputtering 조건의 변화에 대한 I-V curve의 변화를 살펴본다.

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