• Transactions on Electrical and Electronic Materials
• /
• v.7 no.3
• /
• pp.149-153
• /
• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• Journal of the Korean Magnetics Society
• /
• v.14 no.6
• /
• pp.232-235
• /
• 2004

Linear GMR isolator which is profitable for transmitting analog signal was modeled and the output voltage and current in relation to the input current were investigated. GMR isolator modeling was divided into two parts, namely magnetic and electric parts. The flow chart of the modeling was drawn in which the MR curve of the spin valves were incorporated to obtain the electrical voltage output. For magnetic modeling, 3-dimensional model of planar coil was analyzed by FEM method to obtain the magnetic field strength corresponding to the input current. Coil efficiency of the planar coil having magnetic core layer was shown to have about 1.5 times larger than that of the coil without the magnetic core layer. The feedback coil current(output current) corresponding to the input coil current was calculated to be within ${\pm}$0.25 mA of the linear fitting function of I$\_$out/= I$\_$in/-5 mA. Also, the response time and output waveforms were obtained when the coil current was a rectangular waveform. The rise time and fall time was 6 ${\mu}\textrm{s}$, respectively when the slew rate of the op-amp was 0.3 V/${\mu}\textrm{s}$.

• Journal of the Korean Magnetics Society
• /
• v.12 no.3
• /
• pp.99-102
• /
• 2002

We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

• Journal of the Korean Magnetics Society
• /
• v.8 no.6
• /
• pp.362-368
• /
• 1998

The magnetic properties, thermal stability and anti-corrosion properties of $Cr_86Al_14$ spin valves multilayers were studied. It was found that the magnetic properties of $Cr_86Al_14$ spin valves depend on the thickness of antiferromagnetic, ferromagnetic and non-ferromagnetic layers. Exchange coupled field ($H_{ex}$) and magnetoresistance ratio (%) showed the largest value of 20 Oe, 2 % in $glass/Cr_{86}Al_{14}(600 $\AA$)/Ni_{81}Fe_{19}(50$\AA$)/Cu(40 $\AA$)/Ni_{81}Fe_{19}(40 $\AA$)$ spin valves. The $H_{ex}$ MR ratios (%) of CrAl and FeMn spin valves were decreased with increasing annealing temperatures and were lost at 150 $^{\circ}C$, 250 $^{\circ}C$ respectively. Based on these result, it was elucidated that CrAl is more thermally stable than FeMn. It was also shown that there was no change of $H_{ex}$ MR ratios in CrAl, while FeMn was changed and lost 15 days later in corrosion resistance test under 35 $^{\circ}C$, 90 % humidity condition. FeMn was found to be pitted and peeled off 15 days later by SEM micrographic analysis.

• Journal of the Korean Magnetics Society
• /
• v.14 no.6
• /
• pp.228-231
• /
• 2004

We have studied local magnetization reversal and magnetic properties induced by Laser annealing method in the strip-patterned Ta/NiFe/FeMn/Ta and Ta/NiFe/FeMn/NiFe/Ta multilayers fabricated by ion-beam deposition. The films were exposed to the emission of the DPSS (Diode Pumped Solid State, Nd:YAG) laser under 600 G. The laser beam intensity increased up to 440 mW. When the laser illuminated the patterned film with the power of above 200 m W, the intensity of MR peak located in +87 Oe shrunk. A new MR peak was generated at -63 Oe. When the laser power is 400 mW, the location of positive MR peak(H$\sub$ex/) was changed slightly from +87 Oe to +76 Oe, and the MR ratio was decreased from 0.9% to 0.1 %. On the other hand, the new (negative) MR peak shifted from -63 Oe to -80 Oe, with the MR ratio increased up to 0.3%. As the illuminated area expanded, the intensity of opposite MR peak increased and it of negative MR peak decreased. This proved that the local reversal of exchange biasing should be realized by laser annealing.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.6
• /
• pp.271-274
• /
• 2010

We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

• Journal of the Korean Magnetics Society
• /
• v.7 no.3
• /
• pp.146-151
• /
• 1997

Buffer (t $\AA$)/ CoFe(35$\AA$)/Cu (50$\AA$)/Co (35$\AA$) sandwiches prepared by dc magnetron sputtering on Corning glass substrates using the $Co_{90}Fe_{10}$ and Co layers with different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layers, and on the thickness of Cu and the magnetic layers in buffer/ CoFe/Cu /Co sandwiches were investigated. Magnetoresistance ratio and saturation field $H_s$ increased as thickness of the buffer layer becomes thicker, then decreased smoothly after a maximum value. An improved filed sensitivity was realized with the $Ni_{81}Fe_{19}$ buffer layer.

• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.265-270
• /
• 2012

We report improved low-field magnetoresistance (LFMR) effects of the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3-Mn_3O_4$ composite films with the nominal composition of $La_{0.7}Sr_{0.3}MnO_3$(LSMO)-50 mol% $Mn_3O_4$. The composite films were fabricated by ex-situ solid phase crystallization (SPC) of amorphous films at the annealing temperature region of $900-1100^{\circ}C$ for 2 h in a pure oxygen atmosphere. The amorphous films were deposited on polycrystalline $BaZrO_3$ (poly-BZO) substrates by dc-magnetron sputtering at room temperature. The Curie temperatures ($T_C$) of all composite films were insignificantly altered in the range of 368-372 K. The highest LFMR value of 1.29 % in 0.5 kOe with the maximum dMR/dH value of $37.4%kOe^{-1}$ at 300 K was obtained from 900 nm-thick composite film annealed at $1100^{\circ}C$. The improved LFMR properties of the composite films are attributed to effective spin-dependent scattering at the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3$ grain boundaries sharpened by adjacent chemically compatible $Mn_3O_4$ grains.

• Journal of the Korean Magnetics Society
• /
• v.8 no.3
• /
• pp.131-137
• /
• 1998

The thickness dependence of the microstructure and the giant magnetoresistance behavior of co-evaporated Co-Ag granular alloy films were investigated. The maximum magnetoresistance ratio of 24% was observed in the the as-deposited state of the 40 at. % Co alloy having 200 nm thickness. The surface scattering contributed about 20% to the total resistivity in the 20 nm thick films. The MR ratio dropped sharply when the film thickness was below 50 nm. The reduction in the Co particle size and the increase in solid solubility of Ag in fcc Co when the film thickness decreased were observed using a high resolution TEM. The aspect ratio of the Co particles was also affected by the film thickness. Those microstructural changes as well as the surface induced spin flipping play a significant role in the $\Delta$p change.

• Journal of the Korean Magnetics Society
• /
• v.9 no.2
• /
• pp.104-110
• /
• 1999

The effect of the composition and the heat treatment on the magnetic and magnetoresistance properties in AgCo alloy films and Fe/AgCo/Fe trilayers prepared by the co-evaporation method were studied. As the alloy film thickness decreases, especially below 50 nm thick, the magnetoresistance decreases and the saturation field increases significantly. The change of the Co content, heat treatment, and deposition of the Fe under/over-layer were effective to prevent the reduction of the and the increasing of the saturation field. For 40 at.%Co sandwiches, the minimum saturation field was obtained in the 20 nm alloy film with 30nm Fe under-over layer annealed at 300 $^{\circ}C$ for 10 min. Its saturation field and the MR ratio were 1.01 kOe 5.16% respectively.