• Title/Summary/Keyword: Magnetic-induced energy

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Behavior Analysis of a Self Excited Induction Generator with Various Loads for a Hybrid Electric Propulsion System (하이브리드 전기추진시스템 구축을 위한 SEIG의 출력 특성 분석)

  • Yang, Joo-Ho;Choi, Gyo-Ho;Lee, Jae-Min;Jeong, Seok-Kwon
    • Journal of Power System Engineering
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    • v.22 no.1
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    • pp.41-47
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    • 2018
  • This paper analyzes the output characteristics of a self excited induction generator with isolated mode according to change of its speeds and loads for building a hybrid electric propulsion system in special purpose ships by using power take off. The induction generators are being considered as an alternative choice to the well-developed generators because of their lower unit cost, inherent ruggedness, operational and maintenance simplicity. However, the generator working by stand alone has a few problems that the reactive power is required to establish the air gap magnetic flux, and the induced voltage and magnetizing current fluctuate when the load is varied. In spite of its advantages, basic design data of the capacitor bank and behaviors of the output characteristics of the generator are not sufficient for the system. Based on the operating condition(speed range of main engine) of the target boat, a reduced experimental equipment system was constructed to analyze the output characteristics of the SEIG. And a suitable capacitor bank of a stand-alone generator and its output characteristics under various loads was investigated in detail through these experiments. According to the experimental result, it was confirmed that the capacitor bank should be $70{\mu}F{\sim}100{\mu}F$, and the proper SEIG induced voltage should be DC 80 V ~ 250 V in order to storage electrical energy into a battery.

Study on Discharge Phenomenon Occurring in Transmitting Resonance Coil of Wireless Power Transmission (무선전력전송의 송전 공진코일에서 발생하는 방전현상 연구)

  • Gi-Bum Lee
    • The Journal of the Korea institute of electronic communication sciences
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    • v.19 no.2
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    • pp.355-360
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    • 2024
  • In this paper, in implementing a 4-coil resonant wireless power transmission system, we studied the discharge phenomenon that occurs at the end of the transmitting resonance coil. Resonant wireless power transmission consists of a power supply coil, a transmitting resonance coil, a power receiving resonance coil, and a load coil. The transmitting resonance coil serves to amplify the magnetic field generated from the power supply coil and transmits it to the front receiving resonance coil. When a high current flows through the power supply coil in order to transmit large power, a high voltage is induced at the end of the transmitting resonance coil. It causes line-to-line discharge. Line-to-line discharge phenomenon damages the transmitter case and renders the transmitter unusable. Therefore, in order to eliminate this line-to-line discharge phenomenon, the voltage induced in the transmitting resonance coil that causes line-to-line discharge was analyzed and a solution was proposed.

A Critical Note on the Electric Field in Direct and Alternating Current and Its Consciousness

  • Oh, Hung-Kuk
    • Proceedings of the Korean Society for Emotion and Sensibility Conference
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    • 2000.11a
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    • pp.98-104
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    • 2000
  • The conventional model did not take momentum conservation into consideration when the electron absorbs and emits the photons. II-ray provides momentum conservations on any directions of the entering photons, and also the electrons have radial momentum conservations and fully elastic bouncing between two atoms, in the new atom model. Conventional atom model must be criticized on the following four points. (1) Natural motions between positive and negative entities are not circular motions but linear going and returning ones, for examples sexual motion, tidal motion, day and night etc. Because the radius of hydrogen atom's electron orbit is the order of 10$^{-11}$ m and the radia of the nucleons in the nucleus are the order of 10$^{-14}$ m and then the converging $\pi$-gamma rays to the nucleus have so great circular momentum, the electron can not have a circular motion. We can say without doubt that any elementary mass particle can have only linear motion, because of the $\pi$-rays'hindrances, nearthenucleus. (2) Potential energy generation was neglected when electron changes its orbit from outer one to inner one. The h v is the kinetic energy of the photo-electron. The total energy difference between orbits comprises kinetic and potential energies. (3) The structure of the space must be taken into consideration because the properties of the electron do not change during the transition from outer orbit to inner one even though it produces photon. (4) Total energy conservation law applies to the energy flow between mind and matter because we daily experiences a interconnection between mind and body. Conventional Concept of Electric Field must be extended in the case of the direct and alternating current. Conventional concept is based on coulomb's force while the electric potential in the direct and alternating current is from Gibb's free energy. And also conventional concept has not any consciousness with human being but the latters has a conscious sensibility. The cell emf is from the kinetic energy of the open $\pi$-rays flow through the conducting wire. The electric potential in alternating current is from that the trans-orbital moving of the induced change of magnetic field in the wire produces flows of open $\pi$-rays, which push the rotating electrons on the orbital and then make the current flow. Human consciousness can induce a resonance with the sensibility of the open $\pi$-rays in the electric measuring equipment. Specially treated acupunctures with Nasucon is for sending an acupunctural effect from one place to another via space by someone's will power.

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Strain induced/enhanced ferromagnetism in $Mn_3Ge_2$thinfilms

  • Dung, Dang Duc;Feng, Wuwei;Thiet, Duong Van;Sin, Yu-Ri-Mi;Jo, Seong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.135-135
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    • 2010
  • In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

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A Study of Gamma-ray Irradiation Effects on Commercially Available Single-mode Optical Fiber (국내외 상용 단일모드 광섬유의 감마선 영향 분석 연구)

  • Kim, Jong-Yeol;Lee, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.564-567
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    • 2012
  • Optical fibers are going to be used for telecommunication, image fibers, sensors under irradiation in nuclear power plants and various irradiation facilities. Especially, Temperature detection sensors using Raman light scattering, temperature or strain sensors using fiber gratings, magnet-optical sensors using photo-magnetic effect, are already commercialized. However, When fibers are exposed to ionizing radiation, color centers are formed in fibers which reduces their light transmission, and it is limited in applying under radiation environments. In this study, $Co^{60}$ gamma-ray induced optical attenuation on Ge-doped single mode(SM) fiber has been measured. Gamma-ray is irradiated for 4hours at the dose rate of 0.5kGy/hr, 2kGy/hr, 8kGy/hr. Consequently, gamma-ray induced loss based on radiation effects in Ge-doped SM fiber occur precisely. Furthermore, dose rate effect that the higher dose rate in the same total dose, the more increase loss of optical fiber and annealing effect that the higher the loss after irradiation, the more increase the recovery rate of the loss are observed in the fiber. This results plan to make use of bases in the study of the radiation-hardened optical fiber.

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Simulation of the High Frequency Hyperthermia for Tumor Treatment (종양치료용 고주파 열치료 인체적용 시뮬레이션)

  • Lee, Kang-Yeon;Jung, Byung-Geun;Kim, Ji-won;Park, Jeong-Suk;Jeong, Byeong-Ho
    • Journal of the Korea Convergence Society
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    • v.9 no.3
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    • pp.257-263
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    • 2018
  • Hyperthermia supplies RF high-frequency energy above 1MHz to the tumor tissue through the electrodes. And the temperature of the tumor tissue is increased to $42^{\circ}C$ or more to cause thermal necrosis. A mathematical model can be derived a human body model for absorption and transmission of electromagnetic energy in the human model and It is possible to evaluate the distribution of temperature fields in biological tissues. In this paper, we build the human model based on the adult standard model of the geometric shape of the 3D model and use the FVM code. It is assumed that Joule heat is supplied to the anatomical model to simulate the magnetic field induced by the external electrode and the temperature distribution was analyzed for 0-1,200 seconds. As a result of the simulation, it was confirmed that the transferred energy progressively penetrates from the edge of the electrode to the pulmonary tumors and from the skin surface to the subcutaneous layer.

XAS Studies of Ion Irradaited MgO Thin Films

  • Suk, Jae-Kwon;Gautam, Sanjeev;Song, Jin-Ho;Lee, Jae-Yong;Kim, Jae-Yeoul;Kim, Joon-Kon;Song, Jong-Han;Chae, Keun-Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.312-312
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    • 2012
  • Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

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New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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Analytical Characteristics of Electron Spin Resonance for Identifying Irradiated Ramen Soup with Radiation Sources (방사선 조사된 라면수프의 조사선원에 따른 전자스핀공명 분석특성)

  • Ahn, Jae-Jun;Lee, Ju-Woon;Chung, Hyung-Wook;Kwon, Joong-Ho
    • Korean Journal of Food Science and Technology
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    • v.41 no.2
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    • pp.131-135
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    • 2009
  • The identification characteristics of irradiated commercial Ramen soup were investigated depending on radiation sources and doses by electron spin resonance (ESR) spectroscopy. Two commercial powder soups (RS-1, RS-2) were irradiated at 0 to 20 kGy under ambient conditions by both a Co-60 gamma irradiator and an electron beam (EB) accelerator, respectively. Crystalline sugar-induced multi-component signals with g-values of 2.010/2.011, 2.006, 2.002 and 1.999 were detected in the irradiated Ramen soup (RS-1, RS-2), whereas $Mn^{2+}$ signals were observed in non-irradiated samples, thereby distinguishing each other. Under the same analytical conditions, the intensity of ESR signals was higher in EB-irradiated samples than the gamma-irradiated ones. Determination coefficients ($R^2$) between irradiation doses and corresponding ESR responses were above 0.9665 in all the samples, and the magnetic field of specified g-value remained constant. The predominant ESR signals of $g_2$ (2.010-2.011) and $g_3$ (2.002) increased with corresponding doses of irradiation ($R^2$= 0.9750-0.9981).

Traumatic Contusion of ICR Mouse Brain by FPI : $^{1}\textrm{H}$ MR Spectroscopic Study (유체타진손상기법에 의한 ICR 쥐의 뇌손상: 자기공명분광법)

  • Park, Chi-Bong;Kim, Hwi-Yool;Jeun, Sin-Soo;Han, Young-Min;Han, Duk-Young;Kang, Young-Woon;Choe, Bo-Young
    • Progress in Medical Physics
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    • v.14 no.4
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    • pp.259-267
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    • 2003
  • In vivo $^1$H magnetic resonance spectroscopy (MRS) at 4.7 T was applied to investigate the cerebral metabolite changes of mice brain before and after experimental brain trauma. In vivo $^1$H MR spectra were acquired from a voxel covering right parietal cortex in normal brain, used as control subjects. After experimental brain trauma using the fluid percussion injury (FPI) method, $^1$H MR spectra were acquired from the same lesion three days after trauma. Metabolite ratios of the injured lesion were compared to those of controls. After trauma, N-acetylaspartate (NAA)/creatine (Cr) ratio, as a neuronal marker was decreased significantly versus controls, indicating neuronal loss. The ratio of NAA/Cr in traumatic brain contusion was 0.90$\pm$0.11, while that in normal control subjects was 1.13$\pm$0.12 (P=0.001). Choline (Cho)/Cr ratio had a tendency to rise in experimental brain contusion (P=0.02). Cho/Cr ratio after trauma was 0.91$\pm$0.17 while that before traumas was 0.76$\pm$0.15. Cho/Cr ratio was increased and this might indicate a inflammatory activity. However, no significant difference of [(glutamate+glutamine) (Glx)]/Cr was established between experimental traumatic brain injury models and normal controls. Lactate (Lac)/Cr ratio was appeared as a sign of shifted posttraumatic energy metabolism and increased versus controls. These findings strongly suggest that in vivo $^1$H MRS may be a useful modality for clinical evaluation of traumatic contusion and could aid in better understanding the neuropathologic process of traumatic contusion induced by FPI. In the present study, in vivo $^1$H MRS was proved to be a useful non-invasive method for in vivo diagnosis and monitoring of posttraumatic metabolism in models of brain contusion.

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