• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.288-294
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• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.84-84
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.203.1-203.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.62-62
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• 2009

• 제어로봇시스템학회:학술대회논문집
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• 1992.10a
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• pp.159-164
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• 1992

In this paper, the complex nonlinear dynamics of a satellite is obtained. And it is shown that several limitations exist when the magnetorquer is used as an active actuator to attitude control. Such limitations cause a delayed convergence of pitch and roll angle. The simulation results insure that the roll angle bias is dependent on the z axis spin rate. And a heuristic algorithm is applied to control the attitude libration through the computer simulations.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.30-32
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• 2007

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.11a
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• pp.701-707
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• 2000

In this work, we propose to employ magnetostrictive sensors to develop a new non-contacting modal testing method. Specific applications are made in the modal testing of a beam in bending. The role of bias magnetic fields in measuring bending waves is addressed and an approximate analysis to explain the principle to measure bending signals is carried out. The measured modal data by the present method agree well with those by conventional methods using accelerometers.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.567-569
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• 1995

By using the ac field source which can change the applied field magnitude, frequency and dc offset field, the dynamic magnetoresistance characteristics of permalloy based multilayers which have different R-H(resistance-magnetic field) curves were monitored and compared with static magnetoresistance curves that were measured with electromagnet of VSM. Output of each sample according to the external field strength was identified and optimum bias position could be obtained.