Development of Exchange Bias in $IrMn_3$ Based Magnetic Tunnel Junctions

• Sankaranarayanan V.K. (Department of Materials Engineering, Chungnam National University, Microstructure Devices Group, Electronic Materials Division, National Physical Laboratory) ;
• Hu Yongkang (Department of Materials Engineering, Chungnam National University) ;
• Kim Cheol Gi (Department of Materials Engineering, Chungnam National University) ;
• Kim Chong-Oh (Department of Materials Engineering, Chungnam National University) ;
• Tsunoda M. (Department of Electronic Engineering, Graduate School of Engineering, Tohoku University) ;
• Takahashi M. (Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

• Published : 2003.12.01

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