• Journal of Magnetics
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• v.19 no.2
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• pp.121-125
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• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.308-312
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• 2007

Ferroelectric, magnetic, and magnetoelectric effects for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics have been investigated. The data show that magnetoelectric polarization coefficient, ${\alpha}_p$ is due to a linear coupling between polarization and magnetization, and that ${\alpha}_p$ is independent of dc magnetic bias and ac magnetic field. The values of ${\alpha}_p$ and magnetic induced susceptibility for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics are much larger than those of single $BiFeO_3$ crystal. We believe that the magnetoelectric effect is significantly enhanced by breaking of the cycloidal spin state of a long-period spiral spin structure due to randomly distributed charged imperfections.

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.3
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• pp.359-363
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• 2011

An orthogonal magnetic field is often used for a military vessel in the deperm process such as Flash D deperm protocol and Anhysteretic deperm protocol. The effect of the orthogonal magnetic field on a deperm performance was investigated for a sample with strain-induced magnetization and field-induced magnetization given to different direction. A 70mm wide, 110mm long and 0.25mm thick rectangular steel plate was bent to have U-shape and to generate a strong strain on the bottom region of U-shaped steel plate. Field-induced magnetization was attached by NdFeB permanent magnet. Demagnetization was performed by applying magnetic field with a step decrement from the first field(the first shot) under the action of DC bias field.

• Journal of Magnetics
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• v.15 no.4
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• pp.194-198
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• 2010

In our present work, we developed a GMI (giant magnetoimpedance) sensor system to detect magnetic fields in the milli gauss range based on the asymmetric magnetoimpedance (AGMI) effect in Co-based amorphous ribbon with self bias field produced by field-annealing in open air. The system comprises magnetoimpedance sensor probe, signal conditioning circuits, A/D converter, USB controller, notebook computer, and program for measurement and display. Sensor probe was constructed by wire-bonding the cobalt based amorphous ribbon with dimensions $10\;mm\;{\times}\;1\;mm\;{\times}\;20\;{\mu}m$ on a printed circuit board. Negative feedback was used to remove the hysteresis and temperature dependence and to increase the linearity of the system. Sensitivity of the milli gauss meter was 0.3 V/Oe and the magnetic field resolution and environmental noise level were less than 0.01 Oe and 2 mOe, respectively, in an unshielded room.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.486-489
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• 2004

The active magnetic bearing (AMB) systems mounted in moving vehicles are exposed to the disturbances due to the base motion, often leading to malfunction or damage as well as inaccurate positioning of the systems. Thus, in the controller design of such AMB systems, robustness to base disturbances becomes an essential requirement. In this study, effective control schemes are proposed for the homo-polar AMB system, which uses permanent magnets for generation of bias magnetic flux, when it is subject to base motion, and its control performance is experimentally evaluated. The base motion of AMB system is modeled as the dynamic disturbances in the gravity and base excitation forces. To effectively compensate for the disturbances, the angle feed-forward controller based on the inverse dynamic model and the acceleration feed-forward controller based on the normalized filtered-X LMS algorithm are proposed. The performance test of the prototype AMB system is carried out, when the system is mounted on rate table. The experimental results show that the performance of the proposed controllers for the AMB system is satisfactory in compensating for the disturbances due to the base motion.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.963-967
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• 1995

Ultra thin layers of NiFeCo or NiFe were inserted at the interfaces of Ni and Cu to form a multilayer structure. In case of inserting a NiFe layer, the magnetoresistance was about 6%, the saturation magnetic field was 50 Oe and the hysteresis of R-H (resistance-magnetic field) was very small. In case of inserting a NiFeCo layer, the magnetoresistance increased to about 7% but the saturation magnetic field and hysteresis were also increased. The increase of the output under biased magnetic field was much larger in case of inserting a NiFe layer because of relatively smaller hysteresis in R-H behavior.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.186-191
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• 2004

The variation of magnetic properties with insulating materials(glass frits, talc and polyamide) in compressed powder cores composed of Fe$\sub$73.5/Cu$_1$Nb$_3$Si$\sub$15.5/B$\sub$7/ nanocrystalline alloy powders(size: 250～850 $\mu\textrm{m}$) and 3 wt% insulators has been investigated. Larger permeability was obtained at the frequency lower than 300～400 kHz for the powder cores including ceramic insulators(glass frits and talc) as compared to the cores with polyamide, while at higher frequency than 1 MHz the permeability of the former cores decreased rapidly. Further the cores with ceramic insulators showed larger core loss and smaller peak quality factor attained at lower frequency. On the contrary, the powder cores with polyamide exhibited high stability of permeabilities up to several MHz and superior core-loss and quality-factor properties. Moreover the dc bias property was better in the wide field range for the cores having polyamide. The enhanced magnetic properties of polyamide-added cores were attributed to the more sufficient electrical insulation between magnetic particles, where the higher insulation state was considered to be obtained from the larger volume fraction of polyamide in the powder cores.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1087-1093
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• 2012

In this paper, we implemented a HF-band magnetic-field communication system consisting of an amplitude shift keying(ASK) transmitter, a pair of loop antennas, and an ASK receiver. Especially, we suggested a new ASK transmitter architecture, where a drain bias of class E amplifier is switched alternatively between two voltage levels with respect to input data. A maximum 5 W class E amplifier was designed using a low cost IRF510 power MOSFET at the frequency of 6.78 MHz. A measured sensitivity of the designed ASK receiver is -78 dBm, which consists of a log amplifier, a filter, and a comparator. Maximum communication range of magnetic-wave communication system with loop antennas was calculated using magnetic field equations in both near-field and far-field ranges. Also, in order to verify the calculated values, an indoor propagation loss was measured using a pair of loop antennas whose dimensions are $30{\times}30cm$. Maximum operating range is estimated about 35 m in case of transmitter's output power of 1 W and receiver sensitivity of -70 dBm, respectively. Finally, the communication field test using the designed ASK transmitter and receiver was successfully done at the distance of 5 m.