• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• Journal of Magnetics
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• v.11 no.2
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• pp.77-82
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• 2006

The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.451-452
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• 2006

We studied the electro-optical characteristic of vertical alignment liquid crystal display(VA-LCD) on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. LC alignment characteristic showed homeotropic alignment, and pretilt angle was about $90^{\circ}$. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and the electro-optical characteristic of the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system was excellent.

• Proceedings of the Korean Magnestics Society Conference
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• 1994.10a
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• pp.22-23
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• 1994

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.86-87
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.55-55
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.56-57
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• 1993

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.