• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• Journal of electromagnetic engineering and science
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• v.18 no.1
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• pp.35-40
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• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.3114-3120
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• 2023

A high-accuracy magnetic field measurement device based on a cyclotron is being developed for accelerator mass spectrometry (AMS). In this study, a magnetic field measurement device consisting of a Hall probe sensor, piezo-motor, and step motor was developed to measure the magnetic field of the AMS cyclotron magnet. The Hall probe sensor was calibrated to achieve positional accuracy by using polar coordinates. The measurement results between the ratchet gear and piezo-motor, which are the instruments used for driving the measurement device, were analyzed. The measurement result of the device with a piezo-motor exhibits a difference of 5 Gauss (0.04%) as compared with the simulation result.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.72-78
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• 1992

The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

• Journal of Information Display
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• v.3 no.4
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• pp.19-22
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• 2002

In this paper, we introduce an efficient three-dimensional magnetic field mapping system for a Deflection Yoke (DY) in Cathode-Ray Tube (CRT). A three-axis Hall probe mounted in a small cylindrical bar and three-stepping motors placed in a non-magnetic frame were utilized for the mapping. Prior to the mapping starts, the inner contour of DY was measured by a laser sensor to make a look-up table for inner shape of DY. Three-axis magnetic fields are then digitized by a three-dimensional Hall probe. The results of the mapping can be transformed into various output formats such as multi pole harmonics of magnetic fields. Field shape in one, two and three- dimensional spaces can also be displayed. In this paper, we present the features of this mapping device and some analysis results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1890-1896
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• 2008

In this paper, the Si vertical Hall devices ale fabricated by using standard bipolar process and investigated in terms of the opeating and noise properties. The sensitivity of device with P+ isolation dam(type B) has been increased up to about 1.2 times compared to that device without the dam also noise has been increased. With the condition of f=I[KHz], band-width 1[Hz], the resolution of magnetic-field detection were about $0.97[{\mu}T]$/ type B and $1.25[{\mu}T]$/ type A, respectively, thus we must consider correlation the low noise or good resolution and high sensitivity in the situation for device geometry design or even for the materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.868-871
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• 2002

In this paper, we introduce an efficient three-dimensional magnetic field mapping system for a Deflection Yoke (DY) in Cathode-Ray Tube (CRT). A three-axis Hall probe mounted in a small cylindrical bar and three stepping motors placed in a nonmagnetic frame are utilized for the mapping. Prior to the mapping starts, the inner contour of DY is measured by a laser sensor to make a look-up table for inner shape of DY. Three-axis magnetic fields are then digitized by a three-dimensional Hall probe. The results of the mapping can be transformed to various output formats such as multipole harmonics of magnetic fields. Field shape in one, two and three-dimensional spaces can also be displayed. In this paper, we present the features of this mapping device and show some analysis results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.392-396
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• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.773-775
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• 1998

This paper describes the highly sensitive Si Hall magnetic sensing system which can measure the earth magnetic field. Generally, the important parameters in Hall device which degrade the ability of magnetic detection are offset voltage and 1/f noise. The offset voltage and 1/f noise in Hall plates can be reduced by spinning current method. In this paper, we implement the highly sensitive Si Hall magnetic sensing system using spinning current method. As a result, the minimum detectable magnetic field is 0.1G.