• 한국세라믹학회지
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• 제35권2호
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• pp.115-122
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• 1998

The effect of sintering conditions on the sinterability for silicon nitride has been studied by many in-vestigators. However the effect of sintering conditions on the machinability which is the major barrier to the field applications of the ceramic components has not been fully studied. In this study the sintering con-ditions such as temperature gas pressure and time in silicon nitride were varied. The physical and mechan-ical properties of the gas pressure sintered (GPS) silicon nitride were measured. The optimum mi-crostructure of silicon nitride with the excellent machinability was investigated by MFG(magnetic-fluid grinding) technique. An attempt was made to figure out how the mechanical properties influence upon the machinability of silicon nitride ball.

• Macromolecular Research
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• 제13권3호
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• pp.194-205
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• 2005

The network structure of Ni-coated carbon black (NCB) composites filled with phenolic resin was investigated by means of using scanning electron microscopy, viscosity, interfacial tension, shrinkability, Flory-Huggins interaction parameters, and swelling index. The electrical properties of the composites have been characterized by measurement of the specific conductivity as a function of temperature. Additionally, the variation of conductivity with temperature for the composites has been reported and analyzed in terms of the dilution volume fraction, relative volume expansion, and barrier heights energy. The thermal stability of phenolic-NCB composites has been also studied by means of the voltage cycle processes. The experimental data of EMI wave shielding were analyzed and compared with theoretical calculations. The mechanical properties such as tensile strength, tensile modulus, hardness and elongation at break (EB) of NCB-phenolic resin composites were also investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1652-1654
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• 1994

The Extra-high voltage XLPE cable is characterized by low transmission loss, large capacity, and high reliability. Conventionally, for XLPE cables of l54kV and above, aluminium sheath was used to be moisture barrier (thus preventing water tree deterioration of the insulation) and to protect cable core from physical stresses. However, as transmission capacity of the cable increases, so does the cable diameter and the corresponding aluminium sheath outer diameter and thickness. As a result, eddy-current loss in the sheath is increased, limiting the maximum current capacity of the cable itself. As an alternative to aluminium sheath, we have adopted stainless steel sheath with non-magnetic properties and a large resistivity, The new XLPE cable with stainless-steel sheath (CSZV cable) has drastically reduced eddy-current loss in the sheath.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.621-624
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• 1999

Metalization technology of the fine patterns by electroless plating is required in place of electrodeposition as high-density printed boards(PCR) become indispensable with the miniaturization of electronic components. Electroless nickel plating is a suitable diffusion barrier between conductor meta1s, such as Al and Cu and solder is essetional in electronic packaging in order to sustain a long period of service. Moreover, Electroless nickel has particular characteristics including non-magnetic property, amorphous structure. wear resistance, corrosion protection and thermal stability In this study fundamental aspects of electroless nickel deposition were studied with effort of complexeing agents of different kinds. Then the property of electroless deposit are controlled by the composition of the deposition solution the deposition condition such as temperature and pH value and so on. the characteristics of the deposits has been carried out.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.94-95
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• 2005

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.92-93
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• 2005

• Progress in Superconductivity
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• 제3권1호
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• pp.1-4
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• 2001

Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Molecules and Cells
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• 제38권5호
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• pp.409-415
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• 2015

Low-barrier hydrogen bonds (LBHBs) have been proposed to have important influences on the enormous reaction rate increases achieved by many enzymes. ${\Delta}^5$-3-ketosteroi isomerase (KSI) catalyzes the allylic isomerization of ${\Delta}^5$-3-ketosteroid to its conjugated ${\Delta}^4$-isomers at a rate that approache the diffusion limit. Tyr14, a catalytic residue of KSI, has been hypothesized to form an LBHB with the oxyanion of a dienolate steroid intermediate generated during the catalysis. The unusual chemical shift of a proton at 16.8 ppm in the nuclear magnetic resonance spectrum has been attributed to an LBHB between Tyr14 $O{\eta}$ and C3-O of equilenin an intermediate analogue, in the active site of D38N KSI. This shift in the spectrum was not observed in Y30F/Y55F/D38N and Y30F/Y55F/Y115F/D38N mutant KSIs when each mutant was complexed with equilenin, suggesting that Tyr14 could not form LBHB with the intermediate analogue in these mutant KSIs. The crystal structure of Y30F/Y55F/Y115F/D38N-equilenin complex revealed that the distance between Tyr14 $O{\eta}$ and C3-O of the bound steroi was within a direct hydrogen bond. The conversion of LBHB to an ordinary hydrogen bond in the mutant KSI reduced the binding affinity for the steroid inhibitors by a factor of 8.1-11. In addition, the absence of LBHB reduced the catalytic activity by only a factor of 1.7-2. These results suggest that the amount of stabilization energy of the reaction intermediate provided by LBHB is small compared with that provided by an ordinary hydrogen bond in KSI.

• 한국자기학회지
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• 제16권2호
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• pp.130-135
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• 2006

강자성체/비자성 금속/강자성체/반도체 구조에서 층간교환강호작용(interlayer exchange coupling) 에너지가 외부 인가전압으로 제어 가능함을 이론적으로 보였다. 비자성 금속층으로 격리된 두 강자성층 사이의 층간교환상호작용 에너지는 강자성체/비자성 금속 계면에서 전자의 스핀에 의존하는 반사율의 차이에 의해 결정된다는 것은 잘 알려진 사실인데, 이를 각자성체/비자성 금속/강자성체/반도체 구조에 적용하여 층간교환상호작용 에너지가 강자성체/비자성 금속/강자성체 계면에서 전자의 반사율뿐 아니라 강자성체/반도체 계면에서의 반사율에도 의존한다는 것을 보였다 강자성체/반도체 계면에 생기는 Schottky 장벽의 높이와 두께는 인가전압으로 바꿀 수 있고, 그에 따른 전자의 반사율이 인가전압에 의해 바뀔 수 있음을 알 수 있었다. 결과적으로 일차원 자유전자 모델을 사용하여 외부 인가 전압으로써 두 강자성체 사이의 층간 교환 상호작용 에너지를 제어할 수 있다는 것을 확인하였다.