• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.371-372
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• 2012

We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.1
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• pp.67-72
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• 1991

For improving the magnetic properties of the amorphous Fe-B-Si alloy, we annealed the sample in a magnetic field oriented in the plane of the ribbon longitudinal to its long axis. By field annealing, coercive force and total core loss are reduced from 0.04 Oe to 0.02 Oe, and from 0.25 watt/kg to 0.15 watt/kg respectively in comparsion with non-field annealed specimen. These reductions were caused by the formation of 180 dcmain wall parallel to the annealing field due to the induced anisotropy.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.137-137
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• 2016

• Journal of the Korean Magnetics Society
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• v.26 no.3
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• pp.76-80
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• 2016

CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.80.2-80.2
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• 2008

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1286-1287
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• 2006

[ $Nd_2Fe_{14}B/{\alpha}-Fe$ ] nanocomposite powders with a nominal composition of $Nd_{12}Fe_{82}B_6$ were prepared by HDDR combined with mechanical milling. The microstructure was studied by Mossbauer spectrometry and TEM. The magnetic properties were investigated by VSM using bonded magnet samples. The results showed that the annealing temperature had significant influence on both the recombination kinetics and the grain size of the $Nd_2Fe_{14}B$ and ${\alpha}-Fe$ phases, and the bonded magnets presented the best magnetic properties when the nanocomposite powders were prepared by annealing at $760^{\circ}C$ for 30 min.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.7-9
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• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.63-68
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• 1994

The Curie point annealing effects on electrophysical phenomena at the magnetized strontium ferrite(SrO$\cdot$ 6$Fe_{2}O_{3}$) ceramics electrode/10$^{-3}$M KC1 aqueous electrolyte interfaces have been studied using cyclic voltammetric, normal pulse voltammetric, chronocoulometric, and electrochemical impedance techiques. After the Curie point annealing the magnetic flux densities of the speciment was decreased from 900-1100 gauss to 1-2 gauss, i.e. demagnetized. The real component of interfacial impedance was decreased from 7280-7320 ohm to 790-830 ohm. The adsorption and the charge on the electrical double layer was increased from 0 $\mu$C to -58 $\mu$C. The Curie point annealing and the related electrical double layer effect can influence not only the electrophysical properties of the strontium ferrite ceramics electrode itself but also the electrochemical phenomena at the electrode interface. This experimental results suggest that the Curie point annealing and the related electrical double layer effect can be applied to electrochemical magnetic sensors.