• Title/Summary/Keyword: MV processor

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Development of a Packet-Switched Public computer Communication Network -PART 2: KORNET Design and Development of Network Node Processor(NNP) (Packet Switching에 의한 공중 Computer 통신망 개발 연구 -제2부: KORNET의 설계 및 Network Node Processor(NNP)의 개발)

  • 조유제;김희동
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.6
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    • pp.114-123
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    • 1985
  • This is the second part of the four-part paper describing the development of a packet-switched computer network named the cORNET In this paper, following the first par paper that describes the concepts of the KORNET and the development of the network management center (NMC), wc present the design of the KORNET and the development of the network node processor (NNP) The initial configuration of the KORNET consists of three NNP's and one NMC. We have developed each NNP as a microprocessor-based (Mc68000) multiprocessor system, and implemented the NMC using a super-mini computer (Mv/8000) For the KORNET we use the virtual circuit (VC) method as the packet service strategy and the distributed adaptive routing algorithm to adapt efficiently the variation of node and link status. Also, we use a dynamic buffer management algorithm for efficient storage management. Thc hardware of the NNP system has been designed with emphasis on modularity so that it may be expanded esily . Also, the software of the NNP system has been developed according to the CCITT recommendations X.25, X.3, X.28 and X.29.

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Improved Electrical Properties of Polysilicon TFT Using Rapid Thermal Processing (급속열처리 방식을 이용한 다결정 실리콘 소자의 형성된 전기적 특성)

  • 홍찬희;박창엽;이희국
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.12
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    • pp.1865-1869
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    • 1990
  • N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10\ulcorner) were fabricated using RTP (Rapid Thermal Processor) and hydrogen passivation. The N+ source, drain and gate were annealed and recrystallized using RTP at temperature of 1000\ulcorner-1100\ulcorner. But the active areas were not specially crystallized before growing the gate oxide. Without the hydrogen passivarion, excellent transistor characteristics (ON/OFF=5.10**6, S=85MV/DEC, IL=51pA/\ulcorner) were obtained for 1.5\ulcorner MOSFET. Also the transistor characteristics were improved by hydrogen passivation.

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Effect of Bias for Snapshots Using Minimum Variance Processor in MFP (최소분산 프로세서를 사용한 정합장 처리에서 신호단편 수에 따른 바이어스의 영향)

  • 박재은;신기철;김재수
    • The Journal of the Acoustical Society of Korea
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    • v.20 no.7
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    • pp.94-100
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    • 2001
  • When using a sample covariance matrix data in paucity of snapshots, adaptive matched field processing will have problem in inverting covariance matrix due to the rank deficiency. The general solutions are diagonal loading and eigenanalysis methods, but there is a significant bias in the power output. This paper presents a quantitative study of bias of power output and the performance of source localization through the simulation and the measured data analysis in fixed source case using the diagonal loading method for the minimum variance processor. Results show that the bias in power output is reduced and the performance of source localization is improved when the number of snapshots is greater than the number of array sensors.

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Hardware Design of Elliptic Curve processor Resistant against Simple Power Analysis Attack (단순 전력분석 공격에 대처하는 타원곡선 암호프로세서의 하드웨어 설계)

  • Choi, Byeong-Yoon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.1
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    • pp.143-152
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    • 2012
  • In this paper hardware implementation of GF($2^{191}$) elliptic curve cryptographic coprocessor which supports 7 operations such as scalar multiplication(kP), Menezes-Vanstone(MV) elliptic curve cipher/decipher algorithms, point addition(P+Q), point doubling(2P), finite-field multiplication/division is described. To meet structure resistant against simple power analysis, the ECC processor adopts the Montgomery scalar multiplication scheme which main loop operation consists of the key-independent operations. It has operational characteristics that arithmetic units, such GF_ALU, GF_MUL, and GF_DIV, which have 1, (m/8), and (m-1) fixed operation cycles in GF($2^m$), respectively, can be executed in parallel. The processor has about 68,000 gates and its simulated worst case delay time is about 7.8 ns under 0.35um CMOS technology. Because it has about 320 kbps cipher and 640 kbps rate and supports 7 finite-field operations, it can be efficiently applied to the various cryptographic and communication applications.

A Study on the Mismatch of Sound Speed Profile in Source Localization Based on MFP (수직선배열센서를 이용한 정합장처리에서 음속분포 오정합에 의한 음원 위치추정에 관한 연구)

  • Byun Yang-Hun;Park Jae-Eun;Kim Jea-Soo
    • Proceedings of the Acoustical Society of Korea Conference
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    • spring
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    • pp.210-213
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    • 1999
  • 수동소나체계에서 음원의 위치와 관련된 매개변수를 산출하기 위해 정합장처리(Matched Field Processing)가 이용된다 본 연구에서는 수직선배열센서를 이용한 정합장처리에서 음원 위치추정에 영향을 미치는 다양한 요인 중, 수직음속분포 오정합(mismatch)에 의한 영향을 MV 프로세서 (Minimum Variance Processor)를 이용하여 모의실험함으로써 그 결과를 분석하였다. 천해 모의환경에서 동일한 기울기로 증감하는 수직음속분포 오정합은 음원 위치추정에서 거리성분의 오차를 가지며, 상이한 기울기를 갖는 수직음속분포 오정합은 거리와 수심 성분의 오차가 유발됨을 확인할 수 있었다. 심해 모의 환경에서 수직음속분포 오정합은 거리와 수심 성분의 오차가 유발되고, 거리추정의 전반적인 경향은 천해의 동일한 기울기를 가지는 경우와 유사함을 확인할 수 있었다.

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Subthreshold characteristics of polysilicon MOSFETs depending on Annealing Temperature (어닐링 온도 변화에 따른 다결정 MOSFET의 Subthreshold 특성)

  • 홍찬희;백동수;홍재일;유주현;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1990.10a
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    • pp.55-59
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    • 1990
  • N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10$\mu\textrm{m}$) were fabricated using RTP(Rapid Thermal Processor) and hydrogen passivation. The N+ Source, drain and gate were annealed and recrystallized using RTP at temperature of 1000$^{\circ}C$-1100$^{\circ}C$. But the active areas were now specially crystallized before growing the gate oxide. Without the hydrogen passivation, excellent transistor characteristics (ON/OFF=5${\times}$10$\^$6/, s=85mv/dec, I$\_$L/=51pA/$\mu\textrm{m}$) were obtained for 1.5$\mu\textrm{m}$ MOSFET. Also the transistor characteristics were improved by hydrogen passivation.