• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.260.2-260.2
• /
• 2008

• Journal of Magnetics
• /
• v.21 no.4
• /
• pp.491-495
• /
• 2016

We developed an embedded Object-Oriented Micromagnetic Frame (OOMMF) script schemes for more flexible simulations for complex and dynamic mircomagnetic behaviors. The OOMMF can be called from any kind of softwares by system calls, and we can interact with OOMMF by updating the input files for next step from the output files of the previous step of OOMMF. In our scheme, we set initial inputs for OOMMF simulation first, and run OOMMF for ${\Delta}t$ by system calls from any kind of control programs. After executing the OOMMF during ${\Delta}t$, we can obtain magnetization configuration file, and we adjust input parameters, and call OOMMF again for another ${\Delta}t$ running. We showed one example by using scripting embedded OOMMF scheme, tunneling magneto-resistance dependent switching time. We showed the simulation of tunneling magneto-resistance dependent switching process with non-uniform current density using the proposed framework as an example.

• Journal of the Korean Magnetic Resonance Society
• /
• v.23 no.2
• /
• pp.46-50
• /
• 2019

Spin orbit torque would be applied as the next generation of MRAM, so many researchers are interested in related field. To make a more efficient device, electric current should convert into spin current with high efficiency. Moreover, it becomes important to measure efficiency of spin orbit torque accurately. We measured spin torque FMR of W/CoFeB hetero structure system with direct current. The efficiencies of the damping like torque and field like torque were measured by using the linewidth and on-resonance field proportional to direct current. In addition, we analyzed that a quadratic shift of the on-response field was caused by the Joule heating.

• Journal of Korea Water Resources Association
• /
• v.33 no.5
• /
• pp.537-550
• /
• 2000

In this study, Neural Networks models were used to forecast daily streamflow at Jindong station of the Nakdong River basin. Neural Networks models consist of CASE 1(5-5-1) and CASE 2(5-5-5-1). The criteria which separates two models is the number of hidden layers. Each model has Fletcher-Reeves Conjugate Gradient BackPropagation(FR-CGBP) and Scaled Conjugate Gradient BackPropagation(SCGBP) algorithms, which are better than original BackPropagation(BP) in convergence of global error and training tolerance. The data which are available for model training and validation were composed of wet, average, dry, wet+average, wet+dry, average+dry and wet+average+dry year respectively. During model training, the optimal connection weights and biases were determined using each data set and the daily streamflow was calculated at the same time. Except for wet+dry year, the results of training were good conditions by statistical analysis of forecast errors. And, model validation was carried out using the connection weights and biases which were calculated from model training. The results of validation were satisfactory like those of training. Daily streamflow forecasting using Neural Networks models were compared with those forecasted by Multiple Regression Analysis Mode(MRAM). Neural Networks models were displayed slightly better results than MRAM in this study. Thus, Neural Networks models have much advantage to provide a more sysmatic approach, reduce model parameters, and shorten the time spent in the model development.

• Journal of KIISE:Computer Systems and Theory
• /
• v.36 no.3
• /
• pp.171-180
• /
• 2009

Slowly, but surely, we are seeing the emergence of a variety of embedded systems that are employing Storage Class RAM (SCRAM) such as FeRAM, MRAM and PRAM, SCRAM not only has DRAM-characteristic, that is, random byte-unit access capability, but also Disk-characteristic, that is, non-volatility. In this paper, we propose a new software architecture that allows SCRAM to be used both for main memory and for secondary storage simultaneously- The proposed software architecture has two core modules, one is a SCRAM driver and the other is a SCRAM manager. The SCRAM driver takes care of SCRAM directly and exports low level interfaces required for upper layer software modules including traditional file systems, buddy systems and our SCRAM manager. The SCRAM manager treats file objects and memory objects as a single object and deals with them in a unified way so that they can be interchanged without copy overheads. Experiments conducted on real embedded board with FeRAM have shown that the SCRAM driver indeed supports both the traditional F AT file system and buddy system seamlessly. The results also have revealed that the SCRAM manager makes effective use of both characteristics of SCRAM and performs an order of magnitude better than the traditional file system and buddy system.

• Journal of the Korean Magnetics Society
• /
• v.12 no.3
• /
• pp.99-102
• /
• 2002

We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

• Journal of the Korean Magnetics Society
• /
• v.26 no.3
• /
• pp.76-80
• /
• 2016

CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

• Journal of the Korean Magnetics Society
• /
• v.11 no.5
• /
• pp.189-195
• /
• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.

• Journal of the Korean Magnetics Society
• /
• v.10 no.5
• /
• pp.210-219
• /
• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Journal of the Korean Magnetics Society
• /
• v.9 no.5
• /
• pp.251-255
• /
• 1999

NiFe(60 $\AA$)/Co(0$\AA$$\leq$x$\AA$$\leq$15$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were prepared on 4$^{\circ}$ tilt-cut Si(111) substrates with a 50 $\AA$ thick Cu underlayer without applying any external magnetic field during the deposition, and the effects of inserted ultrathin Co layer on magnetic anisotropy and GMR properties of the NiFe(60 $\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valves were investigated. As the ultrathin Co layer was inserted into the NiFe/Cu interface of the spin valves, GMR ratio was increased from about 1.5% to 3.5%, and the easy axis of NiFe(60 $\AA$) layer was rotated by 90$^{\circ}$. Accordingly, it was aligned along the same direction with the easy axis of Co(30 $\AA$)layer. Therefore, squared R-H curves was obtained in the spin valves, which is favorable properties for the digital GMR devices such as MRAM. In order to investigate the change of magnetic anisotropy of NiFe layer of the spin valves in more details,XRD measurement was performed using NiFe(500 $\AA$) and NiFe(500 $\AA$)/Co(10 $\AA$) thin films on the same templates. Strong (220) NiFe peak was observed in both films regardless of the inserted Co layer, so it was thought that the variation of magnetic anisotropy of NiFe layer is from the interface effect, the change of interface from NiFe/Cu to NiFe/Co, rather than the volume effect such as the change of magnetocrystalline effect.