• Journal of the Korean Institute of Gas
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• v.19 no.6
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• pp.99-104
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• 2015

Today the most efficient way to transport the natural gas is carried via the liquid. In order to liquefy the natural gas to be cooled to $-160^{\circ}C$ or less. Cooling method has a number of different ways. In this paper, we studied control method for the representative liquefaction process, C3MR. Natural gas liquefaction control is a tool that can maintain the quality of natural gas is a means to ensure stable operation. Analyzing the C3MR process, and select the control parameters for the control valve. We find control structure for mixed refrigerant cycle through the step response. A control result obtained through the dynamic simulation arbitrarily given a disturbance was found to maintain a steady-state results.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.50-51
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• 1998

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.619-620
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• 2012

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.73-82
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• 1998

The exchange anisotropy is the unidirectional magnetic anisotropy which comes from exchange interaction between antiferromagnetic layer and ferromagnetic layer. The application of this phenomenon to MR read head and spin-valve type GMR (Giant Magnetoresistance) head has been studied extensively. In our study, we intended to apply exchange anisotropy of NiO/NiFe bilayer to spin-valve type GMR element. Above all, we studied the exchange anisotropy of NiO/NiFe bilayer, and focused especially on the effect of NiO deposition condition. And we found that Ar pressure during NiO deposition was crucial factor for the exchange anisotropy of NiO/NiFe bilayer. The lower the Ar pressure is, the better the characteristics of exhange anisotropy is. Then, we applied this optimum condition of NiO/NiFe bilayer to spin-valve type GMR element. Finally we got spin-valve type GMR element which had 3.6 % MR ratio, 16 Oe switching field, and 0.25 %/Oe sensitivity.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.41-44
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• 2010

The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Journal of KSNVE
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• v.5 no.3
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• pp.275-283
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• 1995

본 글에서는 지능구조물의 개념설명과 더불어 ERF의 특성, ERF를 함유란 함유 한 지능구조물 시스템의 구성, 동적 모델링과 진동제어 그리고 그 응용성에 관한 연구 현황과 방향에 대해 살펴보았다. 설명한 바와 같이 지능구조물은 새로운 차원의 신생 하는 첨단분야로서, 소음 및 진동에 관련된 무한한 잠재력과 다양한 응용성으로 미루 어 볼때 아주 매력적인 연구 분야이다. 그러나, 여러 응용 시스템의 상품화 단계로의 도약에 있어서 각 시스템 구성 요소 분야별 해결해야할 연구 사항들이 있다. 먼저, 액추에이팅을 수행하는 ERF 자체의 내구성 문제로서 고온에서 ERF의 효과 하락과 장시간 사용시 ERF에 의한 마멸, 고체 입자의 침전에 의한 초기 상태 불안정 등이 있다. 아울러 기존의 장치의 성능을 능가하기 위해 보다 큰 효과를 나타내는 새로운 차원의 ERF개발이 요구된다. 그리고 센서기술 분야에서는 호스트 재료에 보다 쉽게 결합이 되고 여러가지 형태의 요구조건을 만족시킬 수 있으며 외부 환경조건에 강건 하고 다양한 센서 개발이 요구된다. 또한, 보다 일번적인 동적 모델링을 통해 적용 시스템에 적합하고 강건한 제어기에 대한 연구가 진행되어야 한다. 마지막으로 능동 제어기를 실제로 구현하기 위한 호스트 재료 각 요소마다 센서의 설치, 페회로 피드백 시스템 장착, 상호간의 인터페이스 등의 기술 발전이 요구되며, 아울러 보다 효율적 인 시스템의 성능 특성을 실현할 수 있는 호스트 재료와 기계 메카니즘이 필요로 된다. 이상의 설명에서 알 수 있듯이 지능구조물에 대한 연구는 어느 한 분야에서만 아니라 기계, 전기전자, 토목, 물리, 재료과학 등 통합형식에 의한 접근 방향으로 추진되어야 할 것이다.서 세탁기의 진동 소음을 저감시키기 위해 진동 소음원에 대해 논술하고, 진동해석을 위해 컴퓨터 시뮬레이션 결과를 이용한 저진동 기술 개발에 대하여 기술하고자 한다.rotary piston)식 압축기는 약 20여년 전 부터 냉방용 압축기에서부터 널리 쓰이게 되었다. 약 10여년전부터 상용화 된 스크롤(scroll) 형 압축기도 현재 상대적으로 용량이 큰 가정용 냉방기를 중심으로 많이 쓰이고 있다. 스크류형 압축기는 보통 중대형 상업용에 주로 쓰인다. 해결하려 하였고, 수치해석은 피스톤의 운동을 배제한 단순화한 흡배기계의 정상상태 유동해석이 주를 이루어왔다. Taghaui and Dupont 등[5]은 KIVA코드를 사용하여 흡기포트와 연소실 그리고 밸브의 움직임을 동시에 고려한 수치해석을 도입하였다. 하지만 이들이 밸브의 운동을 고려하기 위해 사용한 이동격자는 격자점은 시간에 따라 변화하지만 그 격자의 수가 일정하게 유지되어 있어서 밸브의 완전개폐를 해석할 수가 없다. 강희정[6]은 단일 실린더와 단일 배기밸브를 갖는 문제로 단순화하여 피스톤과 밸브의 움직임을 고려하므로써 배기행정 후 소음이 어떻게 전파해 나가는가를 연구하였다. 본 연구에서도 최소밸브간격과 최대밸브간격 사이에서만 계산이 가능하나 흡기의 경우는 밸브가 닫힐 때 생기는 압력파가 중요하므로 실린더와 밸브사이에 벽면조건을 주어 밸브의 개폐를 모사하였다.술을 보유하고자 한다. 이용한 해마의 부피측정은 해마경화증 환자의 진단에 있어 육안적인 MR 진단이 어려운 제한된 경우에만 실제적 도움을 줄 수 있는 보조적인 방법으로 생각된다.ofile whereas relaxivity at high field is not affected by τS.