• Korean Journal of Optics and Photonics
• /
• v.7 no.4
• /
• pp.440-444
• /
• 1996

In this paper, we report an InGaAs/InAlAs multi-quantum well (MQW) avalanche photodiode (APD) showing a performance suitable for 10 Gbps lightwave communications. In designing the device, emphasis is given on the effect of indiffusion of Be dopant from the highly doped field layer into the MQW multiplication region. It is found that a small amount of diffusion can alter the dark current and gain characteristics of the device significantly. A spacer used to restrain such indiffusion is shown effective in reducing dark current (500 nA at a gain of 10) while maintaining a high bandwidth (10 GHz at a gain of 10) devices grown by molecular beam epitaxy.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.3
• /
• pp.60-73
• /
• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.25 no.1B
• /
• pp.8-14
• /
• 2000

This paper analyzes and accesses the gain of optically pumped surface-normal MQW optical amplifiers. The proposed amplifiers have the advantage of polarization independence, high coupling efficiency to and from optical fibers, and flexibility of operating wavelength. We analyzed the gain characteristics of 100 - 200-period MQWs and verified the dependence of a strained lattice and selective doping. Theoretical analysis of such MQWs showsa single-pass gain of 3 dB with broad operation bandwidth. A single-pass gain of 2.6 dB is obtained experimentally in an InGaAs/InGaAlAs MQW amplifier, which is compared with calculations. The use of Fabry-Perot interferometer (FPI) structure in an optical amplifier is a useful way to increase the gain, but causes a problem of narrow operation bandwidth when the single-pass gain is low. Therefore, a single-pass gain above 2to 3 dB is a prerequisite to achieve both a high gain and moderate operation bandwidth in FPI-structured opticalamplifiers. We have designed an FPI-structured surface-normal optical amplifier both with a high gain of broad operation bandwidth of 4.6mm, when a single-pass gain is 3 dB.

• Korean Journal of Materials Research
• /
• v.25 no.1
• /
• pp.1-8
• /
• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.441-446
• /
• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.145-145
• /
• 2015

처음 유기물의 인광 발견 이후 Host-dopant 시스템을 이용하여 Emission layer(EML)을 Co-deopsition 하는 방법으로 주로 인광 유기 발광 다이오드를 제작 하였다. [1] co-deposition을 이용해 만든 유기 발광 다이오드에 많은 장점이 있지만, 반대로 소자를 제작하는데 있어서는 많은 문제점을 가지고 있다. [2-4] 이러한 문제점을 개선하기 위하여 co-deposition 대신 non-doped Multi Quantum Well(MQW) 구조를 사용하여 doping 하지 않는 방법을 이용하는 논문들이 보고 되고 있다. Hole, electron, exciton이 MQW 구조를 지나면서, dopant well 안에 갇히게 되고, 그 안에서 다른 layer 간에 energy transfer와, hole-electron leakage가 줄어 들어, 더 효율적인 유기 발광 다이오드를 만들 수 있게 된다. [5-7] 이 연구에서는 CBP를 Potential Barrier로 사용하고, Ir(ppy)3 (Green dopant), Ir(btp)2 (Red dopant) 를 각각 Potential Well로 사용하였고, 두께는 CBP 9nm, dopant 1nm로 하였다. 이러한 소자를 만들고 dopant를 3개의 well에 적당히 배치하여, 각 well에서의 실험적인 발광 량 과, EML 안에서의 발광 mechanism 그리고 각 potential barrier를 줄여가며 dexter, forster에 의한 energy transfer에 대하여 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.8
• /
• pp.24-30
• /
• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.636-639
• /
• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.4
• /
• pp.47-56
• /
• 1995

In this paper the model of the MQE-IMD-based neural trigger circuit is improved, where MQW-IMD is a new semiconductor device proposed and experimentally demonstrated by the author for the hardware implementation of the neural networks. The electron energy of AlXGa1-XAsbarrier is calculated by Ensemble Monte Carlo simulation according to the variation of Al mole fraction x and the applied electric field, whtich had been roughly estimated in the previous paper because of the difficulty to get the data. And in the consideration of the tunneling of the confined electrons within the quantum well the accuracy of the impact ionization rate is enhaned. Finally, the dependance of the frequency of pulse-train on the number of quantum wells can be calculated by modelling the effect of the distance of the induced positive charge from the cathode on the electric field at the cathode.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.4
• /
• pp.49-55
• /
• 2004

This paper describes a 1550 nm multichannel source using Quatemary/quatemary multiple quantum well (MQW) InGaAsP/InGaAsP quantum confined Stark effect (QCSE) tuning for dense wavelength division multiplex (DWDM) systems with 140 ㎓ channel spacing and 32 nm channel selection bandwidth.