• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.393-399
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• 2003

The current paper presents a new Mo-MPS rectifier using molybdenum as barrier metal to improve on the low forward voltage drop and power dissipation of the coventional Al-MPS and Pt-MPS rectifier. Electrical characteristics of the fabricated Mo-MPS rectifier are imvestigated compared with Al-MPS and Pt-MPS rectifier. At the same current level, the forward voltage drop of the Mo-MPS was reduced by 0.11V~0.24V compared to that of the conventional MPS rectifier. Accordingly, since the Power dissipation of a rectifier mostly depends on the forward current density and forward voltage drop, the Mo-MPS rectifier achieved improved power dissipation when compared to the conventional MPS rectifier. The reverse breakdown voltage of a Mo-MPS rectifier with 68% Schottky junction area was about 304y. Despite having a lower forward voltage drop than a conventional MPS rectifier, the Mo-MPS rectifier still exhibited a higher reverse breakdown voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.241-245
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• 2022

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

• Journal of IKEEE
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• v.26 no.2
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• pp.306-312
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• 2022

We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current increased with the lowering barrier height, resulting in 10 times larger current. Additionally, the deep level traps (Z_1/2 and RD_1/2) were revealed by deep level transient spectroscopy (DLTS) measurement in four MPS diodes. Based on DLTS results, the trap energy levels were found to be shallow level by 22~28% with lower barrier height It could confirm the dependence of the defect level and concentration determined by DLTS on the Schottky barrier height and may lead to incorrect results regarding deep level trap parameters with small barrier heights.

• Journal of IKEEE
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• v.20 no.2
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• pp.181-183
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• 2016

In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga's Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.