• Journal of IKEEE
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• v.25 no.3
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• pp.511-516
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• 2021

The electrical characteristics of AlGaN/GaN/HEMT and MOSHFETs with NiO were studied. The threshold voltage of NiO MOSHFET revealed positive shift of +1.03 V than the -3.79 V of HEMT and negative shift of -1.73 V for SiO₂ MOSHFET. Also, NiO MOSHFET showed better linearity in drain current corresponding to gate voltage and higher transconductance at positive gate voltage than the others. The response of gate pulse with base voltage of -5 V was different for both transistors as HEMT showed 20 % drain current decrease at the frequency range of 0.1 Hz~10 Hz and NiO MOSHFET decreased continuously above 10 Hz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.16-21
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• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• Journal of IKEEE
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• v.17 no.4
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• pp.531-536
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• 2013

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.