• 제목/요약/키워드: MOSFET rectifier

검색결과 64건 처리시간 0.024초

새로운 양방향 ZVS PWM SEPIC/ZETA 컨버터 (New Bidirectional ZVS PWM SEPIC/ZETA Converter)

  • 박성대;팽성환;김인동;노의철
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
    • /
    • pp.933-934
    • /
    • 2006
  • 본 논문에서는 새로운 양방향 ZVS PWM Sepic/Zeta 컨버터를 제안한다. 제안한 컨버터는 PWM 제어가능한 컨버터로서 입력과 출력전압의 극성이 같은 비반전 컨버터의 특징을 지니며 DC 전압의 전달함수가 양방향 모두 M=D/(1-D)로 동일하다. 또한 각방향으로 전력전달시 다이오드와 병렬로 연결된 MOSFET가 다이오드의 'ON'시 동시에 'ON'되어 Sychronous Rectifier로 동작하므로 도통손을 저감하였으며, Auxiliary Resonant Commutated Pole를 사용하여 저감된 스위칭 손실을 갖는 특성을 지니고 있다. 또한 Transformer 버전이 존재하므로 입력과 출력사잉에 전기적 절연을 필요로 하는 실제응용에 유용하게 사용할 수 있다.

  • PDF

PSpice 시뮬레이션을 이용한 전자식 스타터의 설계 (Design of An Electronic Starter Using PSpice Simulation)

  • 이동호;곽재영;여인선;정영춘
    • 한국조명전기설비학회:학술대회논문집
    • /
    • 한국조명전기설비학회 1997년도 추계학술발표회논문집
    • /
    • pp.11-13
    • /
    • 1997
  • Abstract - An electronic starter using MOSFET has been designed to take advantage of ideal preheating and starting features which can extend the lifetime of fluorescent lamps. The preheating circuit of the developed electronic starter is consisted of four parts - afull-wave rectifier circuit, an FET switching circuit a timer circuit for the gate switching, and a circuit for end-of-life protection. The circuit is analyzed by using PSpice simulation, and is improved to give an appropriate starting-time through control of R-C time constant of the timer circuit. And the circuit is also provided with an end-of-life protection feature, which utilizes the negative resistance characteristics of a thermistor that is thermally linked to FET through a heatsink. This also protects the FET from any overheating problems. From the results of simulation it is possible to obtain an appropriate value on the starting time for proper ignition and also it is verified that the limit for resistance of the thermistor is dependant on the value of resistance is the timer circuit

  • PDF

GaN FET를 적용한 CRM PFC의 효율특성에 관한 연구 (A study on the Efficiency characteristics of the CRM PFC using GaN FET)

  • 길용만;최현수;진기석;안태영;장진행
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 2014년도 전력전자학술대회 논문집
    • /
    • pp.89-90
    • /
    • 2014
  • Recently, one of the switching rectifiers, Power Factor Correction Circuit is often applied in rectification stage to get high efficient conversion of AC-DC SMPS However, it becomes important to select optimal semiconductor switch as well as to design optimal rectifier for achieving higher power conversion. We performed experiments with MOSFET, SiC and GaN FET that are widely used in 600 W Interleaved CRM PFC and include the data in this report. The results are presented for discrete semiconductor and integrated implementations of interleaved CRM PFC.

  • PDF

2차측 보조 소프트 스위칭 고주파 절연형 무정전전원장치 (Uninterruptible power supply using the secondary auxiliary soft switching high frequency insulating)

  • 김주용;서기영;이현우;문상필
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
    • /
    • pp.1413-1415
    • /
    • 2005
  • In paper, propose new partial resonance ZCS PWM controlled High frequency insulating Full-bridge DC/DC converter not using exciting current of high frequency transformer. It is compared with the existing principles in characteristics. It also realizes a widely stabilized ZVS operating using new On-Off control method at synchronized power rectification MOSFET of high frequency insulating transformer secondary. Finally, it is brought over 97[%] measurement -efficiency by proposed DC-DC converter. It is proved effectiveness of new methods using DC UPS PWM rectifier as switching power.

  • PDF

NSCR_PPS 소자에서 게이트와 N+ 확산층 간격의 변화가 정전기 보호성능에 미치는 영향 (Effects of the ESD Protection Performance on GPNS(Gate to Primary N+ diffusion Space) Variation in the NSCR_PPS Device)

  • 서용진;양준원
    • 한국위성정보통신학회논문지
    • /
    • 제10권4호
    • /
    • pp.6-11
    • /
    • 2015
  • PPS 소자가 삽입된 N형 실리콘 제어 정류기(NSCR_PPS)소자에서 게이트와 $N^+$ 확산층 간격(Gate to Primary $N^+$ diffusion Space; GPNS)의 변화가 정전기 보호 성능에 미치는 영향을 연구하였다. FPW 구조와 CPS 이온주입을 행하지 않은 구조를 갖는 종래의 NSCR 표준소자는 on 저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 정전기 보호소자의 필요조건을 만족시키지 못해 마이크로칩의 정전기보호소자로 적용이 어려웠다. 그러나 본 연구에서 제안하는 PPW 구조와 CPS 이온주입을 동시에 적용하여 변형설계된 소자에서는 GPNS의 변화가 정전기 보호성능의 향상에 영향을 주는 중요한 파라미터였으며, 정전기보호소자의 설계창을 만족시키는 향상된 정전기보호성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

EV와 NEV 겸용 50kW급 고효율 모듈형 급속충전기 개발 (Development of 50kW High Efficiency Modular Fast Charger for Both EV and NEV)

  • 김민재;김연우;요스 프라보우;최세완
    • 전력전자학회논문지
    • /
    • 제21권5호
    • /
    • pp.373-380
    • /
    • 2016
  • In this paper, a 50-kW high-efficiency modular fast charger for both electric vehicle (EV) and neighborhood electric vehicle (NEV) is proposed. The proposed fast charger consists of five 10-kW modules to achieve fault tolerance, ease of thermal management, and reduce component stress. Three-level topologies for both AC-DC and DC-DC converters are employed to use 600V MOSFET, resulting in ease of component selection and increase in switching frequency. The proposed three-level DC-DC converter with coupled inductor and its hybrid switching method can reduce the circulating current under wide output voltage range. A 50-kW prototype of the proposed fast charger was developed and tested to verify the validity of the proposed concept. Experimental results show that the proposed fast charger achieves a rated efficiency of 95.2% and a THD of less than 3%.

액티브 스너버를 이용한 고주파 용접기 컨버터 개발 (Development of Converter for High Frequency Welding Machines using Active Snubber)

  • 신준영;이재민;최승원;이준영
    • 전력전자학회논문지
    • /
    • 제21권4호
    • /
    • pp.351-355
    • /
    • 2016
  • Welding machines are high-capacity systems used in a low-frequency range using IGBT. As their system is similar to a large transformer, most welding machines suffer a great loss because of hard switching and vast leakage inductance. A voltage-balancing circuit is designed to overcome these shortcomings. This circuit can reduce the transformer size by making it into a high frequency and reducing the input voltage by half and by adopting a serial structure that connects two full-bridges in a series to use a MOSFET with a good property at high frequency. In addition, a Schottky diode is used in the primary rectifier to overcome the low efficiency of most welding machines. To use the Schottky diode with a reliably relatively low withstanding voltage, an active snubber is adopted to effectively limit the ringing voltage of the diode cut-off voltage.

Efficiency Improvement of Synchronous Boost Converter with Dead Time Control for Fuel Cell-Battery Hybrid System

  • Kim, Do-Yun;Won, Il-Kuen;Lee, Jung-Hyo;Won, Chung-Yuen
    • Journal of Electrical Engineering and Technology
    • /
    • 제12권5호
    • /
    • pp.1891-1901
    • /
    • 2017
  • In this paper, optimal control of the fuel cell and design of a high-efficiency power converter is implemented to build a high-priced fuel cell system with minimum capacity. Conventional power converter devices use a non-isolated boost converter for high efficiency while the battery is charged, and reduce its conduction loss by using MOSFETs instead of diodes. However, the efficiency of the boost converter decreases, since overshoot occurs because there is a moment when the body diode of the MOSFET is conducted during the dead time and huge loss occurs when the dead time for the maximum-power-flowing state is used in the low-power-flowing state. The method proposed in this paper is to adjust the dead time of boost and rectifier switches by predicting the power flow to meet the maximum efficiency in every load condition. After analyzing parasite components, the stability and efficiency of the high-efficiency boost converter is improved by predictive compensation of the delay component of each part, and it is proven by simulation and experience. The variation in switching delay times of each switch of the full-bridge converter is compensated by falling time compensation, a control method of PWM, and it is also proven by simulation and experience.

클램프모드 포워드 다중 공진형 컨버터와 AT 포워드 다중 공진형 컨버터의 스트레스 비교 (Stress Comparison of CM ZVS-MRC and AT Forward MRC)

  • 오덕진;김희준;김창선
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1999년도 하계학술대회 논문집 F
    • /
    • pp.2698-2700
    • /
    • 1999
  • The MRC minimizes a parasitic oscillation using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So the converter is capable of operating at a high switching and also reducing the losses. But the resonant voltage stress across a resonant switch is 4-5 times a input voltage. This high voltage stress increases the conduction loss in MOSFET. In this paper, the CM forward MRC with synchronous rectifier and AT forward MRC are compared about efficiency and semiconductor stress. For analysis, we have built a 50W CM forward MRC and a 50W AT forward MRC. in which the input voltage is 48V, output voltage is 5V, each other. The measured voltage stress is about 170V of 2.9 times the input voltage in the AT Forward MRC, about 106V of 1.8 times the input voltage in CM forward MRC, and the efficiency is 81.05% in AT Forward MRC, 83.61% in CM forward MRC.

  • PDF

Zero-Voltage and Zero-Current Switching Interleaved Two-Switch Forward Converter

  • Chu, Enhui;Bao, Jianqun;Song, Qi;Zhang, Yang;Xie, Haolin;Chen, Zhifang;Zhou, Yue
    • Journal of Power Electronics
    • /
    • 제19권6호
    • /
    • pp.1413-1428
    • /
    • 2019
  • In this paper, a novel zero-voltage and zero-current switching (ZVZCS) interleaved two switch forward converter is proposed. By using a coupled-inductor-type smoothing filter, a snubber capacitor, the parallel capacitance of the leading switches and the transformer parasitic inductance, the proposed converter can realize soft-switching for the main power switches. This converter can effectively reduce the primary circulating current loss by using the coupled inductor and the snubber capacitor. Furthermore, this converter can reduce the reverse recovery loss, parasitic ringing and transient voltage stress in the secondary rectifier diodes caused by the leakage inductors of the transformer and the coupled inductance. The operation principle and steady state characteristics of the converter are analyzed according to the equivalent circuits in different operation modes. The practical effectiveness of the proposed converter was is illustrated by simulation and experimental results via a 500W, 100 kHz prototype using the power MOSFET.