• Title/Summary/Keyword: MOSFET fault

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Analysis of Leg Fault in Secondary Bridge of Bi-directional Isolated DC-DC Converters (양방향 절연형 컨버터의 2차측 브리지 Leg Fault 특성 분석)

  • Oh, Chang-Yeol;Sung, Won-Yong;Cho, Nam-Jin;Kim, Yun-Sung;Lee, Byoung-Kuk
    • Proceedings of the KIPE Conference
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    • 2013.07a
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    • pp.405-406
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    • 2013
  • 본 논문에서는 MOSFET 바디 다이오드 특성에 의해 양방향 절연형 컨버터의 2차 측 브리지 구조에서 나타나는 Leg Fault 현상을 분석한다. 중/고용량 양방향 절연형 컨버터의 동작에 있어 MOSFET 바디 다이오드로 구성된 정류기가 가지는 특성이 미치는 영향을 분석하고, 특성의 변화를 제시한다. 또한 분석 및 비교 시험의 결과를 통하여 바디 다이오드로 인한 Leg Fault 발생 조건을 보이고, 이를 토대로 양방향 절연형 컨버터의 안정적인 동작을 위해 바디 다이오드 특성을 고려한 MOSFET 선정 방향을 제시한다.

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Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

  • Oh, Chang-Yeol;Sung, Won-Yong;Kim, Yun-Sung;Lee, Byoung-Kuk
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1692-1699
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    • 2015
  • This paper presents an analysis of the mechanism of failure modes in bi-directional phase-shift full-bridge converters, composed of MOSFET, based on the circuit operation and parasitic parameters of MOSFET. In addition, the relation between circuit operation and parameters is suggested through an experimental comparison. From this relation, the suitable ranges of parameters for stable performance are analyzed. The design criteria of the bi-directional phase-shift full-bridge converter are presented and evaluated from the experimental verification.

The Optimized Monolithic Fault Protection Circuit for the Soft-shutdown behavior of 600V PT-IGBT by employing a New Blanking Filter (600V Punch-through형 절연 게이트 바이폴라 트랜지스터의 Soft-shutdown을 위해 시간 지연 회로를 적용한 새로운 보호회로)

  • Lim, Ji-Yong;Ji, In-Hwan;Ha, Min-Woo;Choi, Young-Hwan;Choi, Yearn-Ik;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1299-1300
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    • 2006
  • Floating p-well 전압 감지를 이용한 시간 지연 회로를 적용하여 punch-though형 절연 게이트 바이폴라 트랜지스터 (PT-IGBT)의 최적화된 보호 회로를 제안하였다. Floating P-well 축전기와 게이트 저항은 정상 스위칭 동작시 단락 회로 감지 동작 (false detection of fault)을 차단하며, floating p-well 전압은 단락회로 상황시 풀-다운 (pull-down) MOSFET의 문턱 전압 이상으로 상승되어 풀-다운 MOSFET을 턴-온(turn-on) 시킴으로서 IGBT의 게이트 전압을 감소시킨다. 이에 따라 IGBT의 컬렉터 전류는 자연스럽게 감소된다. 실험 결과를 통해, 단락회로 상황에서 최적화된 IGBT의 보호회로가 소프트-셧다운 (soft-shutdown) 특성을 보이는 것을 확인할 수 있다.

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Fault current limiting technology to protect DC distribution systems (직류배전계통의 보호를 위한 고장전류제한기술)

  • Lee, Sungmin;Kim, Hyosung
    • Proceedings of the KIPE Conference
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    • 2012.11a
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    • pp.1-2
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    • 2012
  • 본 논문에서는 직류배전의 보호를 위한 고장전류제한기술을 제안한다. 제안된 전류제한기는 PWM스위칭 방식으로 동작하며 차동증폭기, 비교기, MOSFET스위치와 게이트드라이버로 구성되어 있다. 전류제한기는 부하 측의 단락사고나 돌입전류를 제어하기 위한 목적으로 직류리액터 $L_f$에 흐르는 전류를 센싱하여 기준전류 $L_{ref}$보다 높게 흐르려는 경우 MOSFET은 ON/OFF스위칭 하여 기준전류 $L_{ref}$이상으로 흐르지 못하게 함으로써 과전류가 흐르는 것을 방지한다. 제안된 전류제한기의 성능을 실험을 통하여 검증 한다.

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An Experimental Fault Analysis and Speed Control of an Induction Motor using Motor Solver

  • Sengamalai, Usha;Chinnamuthu, Subramani
    • Journal of Electrical Engineering and Technology
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    • v.12 no.2
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    • pp.761-768
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    • 2017
  • This paper deals with the performance analysis of three phase induction motor considering its stator side faults and operating thermal limits. The speed control of induction motor using three phase boost converter operated by a MOSFET switch and a PI controller is demonstrated and presented in this article. IGBTs switches are used for inverter drive mechanism. The experimental result of speed control of induction motor using voltage control technique clearly shows better accuracy than conventional methods of speed control. A three phase 1HP 415V 0.78 kW 4 Pole induction motor is designed using motor solver software. Based on the parameters used in the software thermal analysis of induction motor is done and torque variation with conductor area, efficiency, output curve, losses in different parts of motor has been obtained. Also different types of faults namely under voltage, over voltage, stator imbalanced voltage, turn to turn, locked rotor bar, wrong alignment of rotor bar with respect to stator are studied and fault analysis is performed. Hence comparison is made based upon the results obtained before and after faults.

Open Switch Fault Tolerance Control of Active NPC Inverters With HF/LF Modulation (HF/LF 변조를 적용한 Active NPC 인버터의 개방 고장 허용 제어)

  • Jung, Won Seok;Kim, Ye-Ji;Kim, Seok-Min;Lee, Kyo-Beum
    • Journal of IKEEE
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    • v.24 no.1
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    • pp.170-177
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    • 2020
  • This paper presents an open-fault tolerance control method for active neutral point clamped (ANPC) inverter with high frequency/low frequency (HF/LF) modulation. By applying the ANPC inverter with SiC MOSFETs and Si IGBTs, the system efficiency and performance can be improved compared to a Si-based inverter. HF/LF modulation is used for a megawatt-scale inverter to minimize the commutation loop. The open-switch failure in megawatt-scale inverter causes severe damage to load and huge expenses when the inverter has been shut-down. The proposed tolerance control of open-switch failure provides continuous operation and improved reliability to the ANPC inverter. The effectiveness of the proposed fault tolerance control is verified by simulation results.

A New Protection Circuit for Improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST) (수평형 에미터 스위치트 사이리스터의 단락회로 유지 능력 향상을 위한 새로운 보호회로)

  • Choi, Young-Hwan;Ji, In-Hwan;Choi, Yearn-Ik;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.74-76
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    • 2005
  • 수평형 에미터 스위치트 사이리스터(Lateral Emitter Switched Thyristor, LEST)의 고전압 전류 포화 특성을 위한 새로운 보호회로가 제안하였으며 성공적으로 제작 및 측정하였다. LEST의 부유(浮遊, floating) n+ 전압이 보호 MOSFET의 문턱 전압 보다 커지면 보호 회로는 LEST의 동작 모드를 regenerative 상태에서 non-regerative 상태로 전환시킨다. 일반적인 LEST의 전압 전류 포화 특성이 17 V로 제한되는 것에 비해 제안된 회로와 결합된 LEST는 200V 이상의 고전압 전류 포화 특성을 보였으며, Hard Switching Fault(HSF) 단락 회로 상황에서도 $10{\mu}s$ 이상 견디는 단락 회로 유지 능력을 보였다.

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Thyristor-Based Resonant Current Controlled Switched Reluctance Generator for Distributed Generation

  • Emadi Ali;Patel Yogesh P.;Fahimi Babak
    • Journal of Electrical Engineering and Technology
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    • v.2 no.1
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    • pp.68-80
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    • 2007
  • This paper covers switched reluctance generator (SRG) and its comparison with induction and synchronous machines for distributed generation. The SRG is simple in design, robust in construction, and fault tolerant in operation; it can also withstand very high temperatures. However, the performance and cost of the SRG power electronics driver are highly affected by the topology and design of the converter. IGBT and MOSFET based converters are not suitable for very high power applications. This paper presents thyristor-based resonant converters which are superior candidates for very high power applications. Operations of the converters are analyzed and their characteristics and dynamics are determined in terms of the system parameters. The resonant converters are capable of handling high currents and voltages; these converters are highly efficient and reliable as well. Therefore, they are suitable for high power applications in the range of 1MW or larger for distributed generation.

Development of 50kW High Efficiency Modular Fast Charger for Both EV and NEV (EV와 NEV 겸용 50kW급 고효율 모듈형 급속충전기 개발)

  • Kim, Min-Jae;Kim, Yeon-Woo;Prabowo, Yos;Choi, Se-Wan
    • The Transactions of the Korean Institute of Power Electronics
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    • v.21 no.5
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    • pp.373-380
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    • 2016
  • In this paper, a 50-kW high-efficiency modular fast charger for both electric vehicle (EV) and neighborhood electric vehicle (NEV) is proposed. The proposed fast charger consists of five 10-kW modules to achieve fault tolerance, ease of thermal management, and reduce component stress. Three-level topologies for both AC-DC and DC-DC converters are employed to use 600V MOSFET, resulting in ease of component selection and increase in switching frequency. The proposed three-level DC-DC converter with coupled inductor and its hybrid switching method can reduce the circulating current under wide output voltage range. A 50-kW prototype of the proposed fast charger was developed and tested to verify the validity of the proposed concept. Experimental results show that the proposed fast charger achieves a rated efficiency of 95.2% and a THD of less than 3%.

High Voltage Driver IC for LCD/PDP TV Power Supply (LCD/PDP TV 전원장치용 고전압 구동 IC)

  • Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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