• Journal of the Korean Chemical Society
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• v.39 no.1
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• pp.47-56
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• 1995

Tridentate Schiff base molybdenum(V) complexes such as [Mo(Ⅴ)2O(SOHB)4], [Mo(Ⅴ)2O3(SOIP)2(NCS)2] and [Mo(Ⅴ)2O3(SOTB)2(H20)2](SOHB: Salicylidene-o-imino hydroxybenzene, SOIP; Salicylidene-o-imino pyridine, SOTB; Salicylidene-o-imino thiolbenzene) were synthesized and identified by elemental analysis, spectroscopy, and thermogravimetric analysis (TGA). It was found that the mole ratio of Schiff base ligand to the metal in these complexes is 1 : 1 or 1 : 2. The redox processes of the complexes were investigated by cyclic voltammetric and differential pulse polarographic techniques in nonaquous solvent containing 0.1 M tetraethylammonium perchlorate (TEAP) as supporting electrolyte at glassy carbon electrode. It was found that diffusion controlled reduction processes with one electron were Mo(Ⅴ)Mo(Ⅴ)e-→ Mo(Ⅴ)Mo(Ⅳ)e-→Mo(Ⅳ)Mo(Ⅳ)e-→Mo(Ⅳ)Mo(Ⅲ).

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.201-206
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• 1988

To investigate the effects of Mo addition on the microstructures and mechanical properties of Al_2O_3$ ceramics, two kinds of Mo particles with average sizes of 2-${\mu}{\textrm}{m}$ and 6-${\mu}{\textrm}{m}$ were used as additives. It was shown that Mo particles inhibited the grain growth of Al_2O_3$, and the smaller Mo particles were more effective. In case of 2-${\mu}{\textrm}{m}$ Mo dispersion, the bending strength and the fracture toughness were increased. Dispersion of 6-${\mu}{\textrm}{m}$ MO did not increase the strength but improved the fracture toughness a little. The toughening mechanisms of Al_2O_3$-Mo composites are thought to be the crack deflection and microcracking mechanisms.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.683-690
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• 1996

In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

• Journal of Powder Materials
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• v.4 no.3
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• pp.179-187
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• 1997

Milling media of steel and zirconia were used to produce $MoSi_2$ by mechanical alloying (MA) of Mo and Si powders. The effect of milling media on MA of Mo-65.8at%Si powder mixture has been investigated by SEM, XRD, DTh and in-situ thermal analysis. The powders mechanically alloyed by milling medium of steel for 8 hours showed the structure of fine mixture of Mo and Si, and those mechanically alloyed by milling medium of zirconia for longer milling time showed the structure of fine mixture of Mo and Si. The tetragonal $\alpha$-$MoSi_2$ Phase and the tetragonal $Mo_5Si_3$ phase appeared with small Mo peaks in the powders milled by milling medium of steel for 4 and 8 hours. The $\alpha$-$MoSi_2$ phase and the hexagonal $\beta$-$MoSi_2$ phase were formed after longer milling time. The $\alpha$-$MoSi_2$ phase appeared with large Mo peaks in the powders milled by milling medium of zirconia for 4 hours. The phases, $\alpha$-$MoSi_2$ and $\beta$-$MoSi_2$. were formed in the powders milled for longer milling time. DTA and annealing results showed that Mo and Si were transformed into $\alpha$-$MoSi_2$ and $Mo_5Si_3$, while $\beta$-$MoSi_2$ into $\alpha$-$MoSi_2$. In-situ thermal analysis results demonstrated that there were a sudden temperature rise at 212 min and a gradual increase in temperature in case of milling media of steel and zirconia, respectively. The results indicate that MA can be influenced by materials of milling medium which can give either impact energy on powders or thermal energy accumulated in vial.

• Tribology and Lubricants
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• v.16 no.3
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• pp.223-230
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• 2000

Factors influencing friction reduction with MODTP(molybdenum dialkyl dithiophosphate) lubricant were investigated through a frictioning experiment using two-cylinder edge surface frictioning tester and XPS surface analysis. The friction reduction effect gained with MoDTP lubricant appeared to be largely attributable to MoS$_2$ formation on the frictioning interface. Under N$_2$ atmosphere, Mo diffused into the metal substrate, easily escaping from MoS$_2$ so the friction reduction effect from MoDTP was not gained. However, when an oxide surface film was preliminary prepared on frictioning surface, this Mo diffusion to metal substrate from MoS$_2$ was effectively inhibited. Then desired lubulication effect of MoDTP was gained even under N$_2$atmosphere. As such, the existence of a surface oxide film on the frictioning surface was concluded to be of essential importance in order to gain a lubrcating effect with MoDTP.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.231-236
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• 1999

Several series of morphologically controlled $MoO_3$/$SiO_2$ catalysts were prepared, characterized, and tested for hydrodesulfurization (HDS) of dibenzothiophene (DBT) activity. Molybdenum surface loaded with 4.0 atoms $Mo/nm^2$ was prepared as sintered hexagonal and sintered orthorhombic, as well as a novel "well dispersed hexagonal" phase. Characterization by XRD, Raman, and $O_2$ chemisorption results reveals that the dispersion of $MoO_3$ over silica depends on the final $MoO_3$ phase in the order of; sintered hexagonal < sintered orthorhombic < dispersed hexagonal phase. Temperature programmed reduction (TPR) results show that both bulk and dispersed microcrystalline of $MoO_3$ reduce to $MoO_2$ at $650^{\circ}C$ and to Mo metal at $1000^{\circ}C$. HDS of DBT was performed in a differential reactor at 30 atm over the temperature range $350{\sim}500^{\circ}C$. Activity of $MoO_3$/$SiO_2$ toward HDS of DBT is proportional to dispersion.

• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.4
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• pp.23-28
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• 2004

In this paper, the properties of Mo as PMOS gate electrodes were studied. The work-function of Mo extracted from C-V characteristic curves was appropriate for PMOS. To identify the electrical and chemical stability of Mo metal gate, the changes of work-function and EOT(Effective Oxide Thickness) values were investigated after 600, 700, 800 and 90$0^{\circ}C$ RTA(Rapid Thermal Annealing). Also it was found that Mo metal gate was stable up to 90$0^{\circ}C$ with underlying SiO$_2$through X-ray diffraction measurement. Sheet resistances of Mo metal gate obtained from 4-point probe were less than 10$\Omega$/$\square$ that was much lower than those of polysilicon.

• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.395-399
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• 2002

The voltammetric behavior of spontaneously adsorbing Mo layers on Pt(111) and Pt(100) electrodes has been studied to estimate the number of electrons involved in the electrochemical processes of spontaneously adsorbed Mo and the number of the bloc ked Pt sites for hydrogen adsorption. On Pt(111) and Pt(100) surfaces, the spontaneously adsorbed Mo layers showed redox peaks at 0.10 V and 0.15 V, respectively, and continuous current-potential waves in the conventional hydrogen region. Since the potential range of the Mo redox processes on both surfaces overlapped partially with the potential range of hydrogen adsorption, the variation in the ratio of the total charge of Mo and H ($Q_H$ +$Q_{MO}$) to the hydrogen charge of clean Pt electrode ($Q_H^0$) was analyzed. From the analysis, six electrons were estimated to be involved in the electrochemical processes of the spontaneously adsorbed Mo, and four Pt sites for hydrogen adsorption were calculated to be blocked by one adsorbed Mo atom. Based on these figures and the pH dependence of the Mo redox processes, we have proposed an electrochemical equation for the spontaneously adsorbed Mo. This electrochemical equation led us to conclude that the saturation coverage of the spontaneously adsorbed Mo is 0.25. The coverage of Mo less than 0.25, however, could not be determined voltammetrically due to the convolution of the charges of Mo and H.