• Title/Summary/Keyword: MFS capacitor

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Equivalent Circuit Modeling and Characteristics Simulation of Ferroelectric Switching Devices (강유전성 스위칭 소자의 등가회로 모델과 특성 시뮬레이션)

  • Kim, Jin-Hong;Hong, Sung-Jin;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1506-1508
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    • 2001
  • We have investigated for the modeling and the simulation of the ferroelectric capacitor and MFS TFT (Metal-Ferroelectric-Semiconductor Thin Film transistor). For ferroelectric capacitor modeling, we adopted the equivalent circuit model which consists of a nonlear capacitor, a nonliner resistor, and a linear capacitor. MFS TFT have been modeled by combining the ferroelectric capacitor and Bsim3 MOSFET model. Our simulations show the characteristics of ferroelectric capacitor and MFS TFT.

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Properties of MFS capacitors with various gate electrodes using $LiNbO_3$ferroelectric thin film ($LiNbO_3$ 강유전체 박막을 이용한 MFS 커패시터의 게이트 전극 변화에 따른 특성)

  • 정순원;김광호
    • Journal of the Korean Vacuum Society
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    • v.11 no.4
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    • pp.230-234
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    • 2002
  • Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

Effect of RTA Treatment on $LiNbO_3$ MFS Memory Capacitors

  • Park, Seok-Won;Park, Yu-Shin;Lim, Dong-Gun;Moon, Sang-Il;Kim, Sung-Hoon;Jang, Bum-Sik;Junsin Yi
    • The Korean Journal of Ceramics
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    • v.6 no.2
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    • pp.138-142
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    • 2000
  • Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

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Fabrication and Properties of MFSFET′s Using $BaMgF_4$/Si Structures for Non-volatile Memory ($BaMgF_4$/Si 구조를 이용한 비휘발성 메모리용 MFSFET의 제작 및 특성)

  • 이상우;김광호
    • Electrical & Electronic Materials
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    • v.10 no.10
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    • pp.1029-1033
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    • 1997
  • A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

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Characteristics of Ferroelectric Transistors with $BaMgF_4$ Dielectric

  • Lyu, Jong-Son;Jeong, Jin-Woo;Kim, Kwang-Ho;Kim, Bo-Woo;Yoo, Hyung-Joun
    • ETRI Journal
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    • v.20 no.2
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    • pp.241-249
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    • 1998
  • The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

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