• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.2
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• pp.128-132
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• 2007

Thermal Imaging systems are reported to be crucial for fire fighting and beginning to be used by fire fighters. The performance of thermal imaging system is determined by both the radiation of infrared from the target and the attenuation of infrared signal in the optical path by the absorption, scattering, diffraction and reflection. In the scene of fire, water drops with various sizes such as vaporized water, wafer mist from sprinkler, and wafer to suppress the fire reside with various gas generated by burning. To measure the transmission of infrared radiation in the scene of fire, fire simulating system and thermal imagers with cooled detector which detects $3{\sim}5{\mu}m$ infrared and uncooled detector fabricated by the MEMS technology which detects $8{\sim}12{\mu}m$ infrared. are made. With thermal imagers and Ire simulating system, the change of thermal image with respect to the change of visibility controlled with the burned fas was measured. It was found that the transmission of infrared was not reduced by the burned gas, which could be explained by the long wavelength of infrared ray compared with visible ray. However, the transmission of infrared ray was largely reduced by the combination of burned gas and water mist supplied by sprinkler. This is contrary to the results of calculated transmission through the pure water mist and shows that the transmission of infrared ray is mostly affected by the compounds of water mist and burned gas. In this case, it was found that the uncooled detector which detects $8{\sim}12{\mu}m$ infrared ray is better than cooled detector which detects $3{\sim}5{\mu}m$ infrared ray for fire fighting.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1246-1247
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• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2003-2005
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• 2002

바이오 마이크로 시스템 및 바이오 MEMS 분야, 특히 실리콘을 기질로 하는 바이오 센서 제작에서 반도체 공정 기술은 센서의 대량 생산과 초소형화를 위해서 반드시 필요한 기술이다. 그러나, 감지전극의 마이크로화에 따른 센서의 감도 및 안정성 저하 문제는 해결해야 할 과제이다. 최근, 다공질 실리콘이 갖는 대면적이 실리콘 기질과 생체 고분자 (예: 단백질, 핵산 등) 간의 결합력을 향상시킬 수 있음이 알려지면서, 바이오 센서 분야에서, 새로운 형태의 드랜스듀서 재료로서의 다공질 실리콘에 대한 논의가 활발히 전개되고 있으며 또한, ISFET (Ion-Selective Field-Effect Transistors) 와는 달리 다공질 실리콘 층은 저항이 크기 때문에 센서 제작 과정에서의 부가적인 절연막을 필요로 하지 않는다. 본 연구에서는, 백금을 증착한 다공질 실리콘 표면에 전도성 고분자로서 Polypyrrole (PPy) 필름과 생체 고분자 물질로서 Urease를 각각 전기화학적으로 흡착하였다. 다공질 실리콘 층의 형성을 위해 테플론 소재의 전기화학 전지에 불산 (49%), 에탄올 (95%), $H_2O$ 혼합 용액을 넣고 실리콘 웨이퍼에 일정시간 수 mA의 산화 전류를 흘려주었으며, 약 $200{\AA}$의 티타늄 박막과 $200{\AA}$의 백금 박막을 RF 스퍼터링하여 작업 전극을 제작하였고, 백금 박막 및 Ag를 기화 증착하여 제작한 Ag/AgCl 박막을 각각 상대 전극과 기준전극으로 하였다. 박막 전극의 표면 분석을 위해 SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-ray spectroscopy) 등을 이용하였다. 제작된 요소 센서로부터 요소 농도 범위 0.01 mmol/L ${\sim}$ 100 mmol/L에서 약 0.2 mA/decade의 감도를 얻었다.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.151-156
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• 2003

Two capacitance diaphragm gauges(CDG) and two resonance silicon gauges(RSG) were calibrated using an ultrasonic interferometer as a national low vacuum standard in KRISS. The CDG has superior pressure resolution and is rugged as well as resistant to over-pressure because of all-metal inner components. Meanwhile, the RSG is a new type of MEMS sensor that has excellent calibration stability and is resistant to mechanical shocks. The calibration uncertainties were analyzed according to the ISO procedures. Results showed that the maximum difference of the expanded uncertainties was $9\times10^{-3}$Pa at the generated pressure of 100 Pa for the two different types. It is remarkable that the RSG can be used as a transfer standard at low vacuum since their accuracies were found to be within 0.5 %.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.36 no.2
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• pp.67-74
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• 2018

This study has proposed a methodology to detect suspicious facilities that occupy national and public land by using the cadastral and digital maps. First, we constructed a spatial database of national & public land based on the cadastral maps by linking its management ledger. Using the PNU (Parcel Number) code as a key field, the data managed by different institutions are integrated into a single spatial information DB (database) and then, the use or nonuse state of each parcel is confirmed on the cadastral map. Next, we explored the suspicious facilities that existed in the unused parcel by utilizing the digital topographical map. Then, the proposed methodology was applied for various regions and tested its feasibility. Through this study, it will be possible to improve the utilization of digital maps and to manage the national and public land efficiently and economically.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.54-59
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• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.150-155
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• 2013

Recently, various hearing aids are developed to overcome hearing loss. There are available hearing aids, such as air conduction hearing aid, implantable middle ear hearing aid and so on. But air conduction hearing aid is inconvenience caused by howling, and ossicle chain driving type implantable middle ear hearing aid has some week point due to problem of possible nercobiosis of coupling spot along incus long process. In recent years, in order to improve these shortcomings round window (RW) driving hearing aid has been paying attention. In this paper, the physical cochlear model is proposed for a performance evaluation of the RW driving hearing aids of a transducer. In order to verify an experiment proposed on a performance of physical cochlear model, the transducer which has ossicles characteristics is used. By measuring and comparing the frequency characteristics of transducer with ossicles and human temporal bone, performance of physical cochlear model was verified. As from the result of experiment, it is expected that an implemented cochlear model is useful for evaluating characteristics of RW transducer.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2251-2253
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• 2000

MEMS기술을 이용하여 단층 실리콘 나이트라이드($Si_{3}N_4$) 다이아프램을 제조하고, 이 다이아프램상에 저항성 가열 진공증착법과 고주파 마그네트론 스퍼터링법을 이용하여 차례로 In막과 ZnO막을 증착하고, In의 도핑을 위해 열처리하여 $NH_3$ 가스 감지용 마이크로센서를 제작하였다. 감지막의 열처리온도에 따른 구조적 및 전기적 특성은 XRD, SEM, AFM, 4-point probe 및 Electrometer를 통하여 각각 조사하였다. 제작된 센서의 열처리온도와 인가전력에 따라 $NH_3$ 가스에 대한 감도, 선택성 및 시간응답 특성을 조사하였다. 감지막 두께 3000 ${\AA}$, 열처리온도 400$^{\circ}C$로 제조된 마이크로 센서가 히터 인가전력 366 mW에서 100 ppm의 $NH_3$ 가스농도에서 대하여 16 %, 350 ppm의 가스농도에서 대하여 23 %의 가장 우수한 감도를 나타내었다. 그러나 CO 가스 및 $NO_x$ 가스에 대한 감지특성은 관찰되지 않았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.