• 제목/요약/키워드: MEMS fabrication

검색결과 415건 처리시간 0.028초

다결정 3C-SiC 박막 다이오드의 전기적 특성 (Electrical characteristics of polycrystalline 3C-SiC thin film diodes)

  • 정귀상;안정학
    • 센서학회지
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    • 제16권4호
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    • pp.259-262
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

미립분사가공을 이용한 유리 소재의 가속도 센서 구조물 성형 (Fabrication of the Acceleration Sensor Body of Glass by Powder Blasting)

  • 박동삼;강대규;김정근
    • 한국정밀공학회지
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    • 제23권2호
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    • pp.146-153
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    • 2006
  • Acceleration sensors have widely been used in the various fields of industry. In recent years, micromachining accelerometers have been developed and commercialized by the micromachining technique or MEMS technique. Typical structure of such sensors consist of a cantilever beam and a vibrating mass fabricated on Si wafers using etching. This study investigates the feasibility of powder blasting technique for microfabrication of sensor structures made of the pyrex glass alternating the existing Si based acceleration sensor. First, as preliminary experiment, effect of blasting pressure, mass flow rate of abrasive and no. of nozzle scanning on erosion depth of pyrex and soda lime glass is studied. Then the optimal blasting conditions are chosen for pyrex sensor. Structure dimensions of designed glass sensor are 2.9mm and 0.7mm for the cantilever beam length and width and 1.7mm for the side of square mass. Mask material is from aluminium sheet of 0.5mm in thickness. Machining results showed that tolerance errors of basic dimensions of glass sensor ranged from 3um in minimum to 20um in maximum. This results imply the powder blasting can be applied for micromachining of glass acceleration sensors alternating the exiting Si based sensors.

실리콘 웨이퍼를 이용한 이방성의 젖음성을 가지는 초소유성 표면 제작 (Fabrication of Superoleophobic Surface with Anisotropic Wettability Using Silicon Wafer)

  • 이동기;이은행;조영학
    • 한국생산제조학회지
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    • 제23권6호
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    • pp.533-538
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    • 2014
  • We fabricated grooved mushroom structures with anisotropic wettability on silicon substrates using basic MEMS processes. The geometry of these grooved mushroom structures could be changed by controlling the additional IPA solution during Si etching by TMAH solution. To understand anisotropic wettability, contact angles (CAs) of hexadecane droplets were measured in the orthogonal and parallel directions to grooved lines. The CA measurement results displayed anisotropic wetting on the grooved mushroom structures. However, specimens with $80{\mu}m$ distance between top layers displayed isotropic and superoleophobic wetting. This study demonstrates that the thickness of the top layer is more critical than the width or height of the ridge when determining the wettability of organic solvent. Despite the wide distance between top layers ($80{\mu}m$), the specimen with a thin top layer (100 nm) showed highly anisotropic wetting and low CA due to the pinning of droplets at the edge of the top layer.

집적형 광 픽업용 대면적 실리콘 미러 제작 (Fabrication of Large Area Silicon Mirror for Integrated Optical Pickup)

  • 김해성;이명복;손진승;서성동;조은형
    • 정보저장시스템학회논문집
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    • 제1권2호
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    • pp.182-187
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    • 2005
  • A large area micro mirror is an optical element that functions as changing an optical path by reflection in integrated optical system. We fabricated the large area silicon mirror by anisotropic etching using MEMS for implementation of integrated optical pickup. In this work, we report the optimum conditions to better fabricate and design, greatly improve mirror surface quality. To obtain mirror surface of $45^{\circ},\;9.74^{\circ}$ off-axis silicon wafer from (100) plane was used in etching condition of $80^{\circ}C$ with 40wt.% KOH solution. After wet etching, polishing process by MR fluid was applied to mirror surface for reduction of roughness. In the next step, after polymer coating on the polished Si wafer, the Si mirror was fabricated by UV curing using a trapezoid bar-type way structure. Finally, we obtained peak to valley roughness about 50 nm in large area of $mm^2$ and it is applicable to optical pickup using blu-ray wavelength as well as infrared wavelength.

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PZT 박막의 압전특성에 미치는 공정변수의 효과 (Effect of Process Parameter on Piezoelectric Properties of PZT Thin films)

  • 김동국;지정범
    • 한국전기전자재료학회논문지
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    • 제15권12호
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    • pp.1060-1064
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    • 2002
  • We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

열광학 효과를 이용한 SOI $1\times24$ 비대칭 광스위치 설계 및 제작 (Design and fabrication of SOI $1\times2$ Asymmetric Optical Switch by Thermo-optic Effect)

  • 박종대;서동수;박재만
    • 대한전자공학회논문지SD
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    • 제41권10호
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    • pp.51-56
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    • 2004
  • 광소자의 재료물질로서 특성이 우수하며 열광학계수가 큰 silicon을 기반으로 한 SOI (Silicon-on-insulator)를 사용하여 열광학 1×2 광스위치를 제안, 제작하였다. SOI wafer는 도파로가 형성될 상위 Si 층(n=3.5)과 클래딩 영역이 될 산화막 매립층(n=1.5) 그리고 기판인 Si인 3층으로 이루어진다. BPM(Beam propagation method) 전산모의를 통해 20dB 이상의 누화특성을 갖는 단일모드의 1×2 비대칭 y-분기 광도파로를 형성하고, 열확산 전산모의를 통해 금속열선을 설계 제작하였다. 제작된 광스위치는 약 3.5 watts의 구동 전력에서 20dB 이상의 채널간 누화가 측정되었다.

Micro DC-DC Converter에 사용되는 박막 인덕터의 제조에 관한 연구 (A study on the fabrication of Planar type inductor for Micro DC-DC Converter)

  • 김충식;정종한;배석;류성룡;김형준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1679-1681
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    • 2000
  • 휴대 전화 및 캠코더 등의 휴대기기의 보급이 급격히 확산됨에 따라 기기의 소형화와 경량화가 제품 개발의 가장 큰 과제로 떠오르게 되었다. 특히 전자기기들은 기능이 다양해질수록 필요로 하는 부품이 늘어나게 되고, 그 결과로 불가피하게 일차로 공급되는 단일 저압의 전원으로는 구동시킬 수 없는 부분이 생기게 된다. 따라서 그들 개별 소자 또는 부품들이 구동되기 위해서는 그에 필요한 전력이 공급되어야 한다. 이러한 역할을 담당하는 것이 SMPS이며 본 연구에서는 SMPS의 전원 안정화를 담당하는 인덕터의 평면화를 구현하고자 고주파 대역에서 우수한 자기적 특성 및 높은 포화 자화 값으로 소자의 load current를 증가시킬 수 있는 PeTaN 자성 박막과 전기 저항을 낮추기 위한 MEMS 기술을 응용한 높은 aspect을 지닌 Cu 코일부, 전기적 절연을 담당하는 절연막을 사용한 평면형 인덕터를 제조하였으며, 인덕터의 특성인 인덕턴스는 약 5MHz까지 1.5${\mu}H$를 나타내며 낮은 전기 저항($2\Omega$)을 보여주었다. 특히 최근 사용되어지는 전자 부품들의 저전력, 저전압, 높은 구동전류의 실현을 위해서는 높은 load current를 지녀야 한다. 측정된 인덕터의 load current에 따른 효율은 약 200mA까지 78%의 효율을 보여 주었다.

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수치 해석을 이용한 단일 마이크로채널의 단면 가열 조건의 열전달 특성에 관한 연구 (Investigation of Heat Transfer in Microchannel with One-Side Heating Condition Using Numerical Analysis)

  • 최치웅;허철;김동억;김무환
    • 대한기계학회논문집B
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    • 제31권12호
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    • pp.986-993
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    • 2007
  • The microchannel heat sink is promising heat dissipation method far high density electronic devices. The cross-sectional shape of MEMS based microchannel heat sink is limited to triangular, trapezoidal, and rectangular due to their fabrication method. And heat is added to one side surface of heat source. Therefore, those specific conditions make some complexity of heat transfer in microchannel heat sink. Though many previous research of conjugate heat transfer in microchannel was conducted, most of them did not consider heat loss. In this study, numerical investigation of conjugate heat transfer in rectangular microchannel was conducted. The method of heat loss evaluation was verified numerically. Heat distribution was different for each wall of rectangular microchannel due to thermal conductivity and distance from heat source. However, the ratio of heat from each channel wall was correlated. Therefore, the effective area correction factor could be proposed to evaluate accurate heat flux in one side heating condition.

수정된 라플라시안 센서를 이용한 심박변이도 측정에 관한 연구 (A Study on the Measurement of Heart Rate Variability using the Modified Laplacian Electrodes)

  • 이충근;신항식;김홍래;이정환;김용준;이명호
    • 전기학회논문지
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    • 제58권5호
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    • pp.1050-1056
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    • 2009
  • Heart Rate Variability(HRV) is a parameter that represents monitoring variability of time intervals between R-peak in electrocardiography. HRV serves to various applications, such as indices of autonomic functions, prediction of cardiac sudden death, assessment of stress and emotional, etc. However, as measuring R-peak in ECG needs at least 3-electrodes, and it is inconvenient for end users. In this paper, we suggested the modified laplacian electrodes for measuring HRV at one-point, which are producted by MEMS fabrication and have the two circular electrodes on the pad. For optimal position and direction, we performed an experiment that compared with pearson correlation coefficient and the amplitude of signals, between standard lead II and proposed electrodes. We analyzed the HRV parameters, such as standard deviation of the NN interval(SDNN), high frequency(HF), low frequency(LF), LF/HF ratio. The result showed that the average correlation coefficient and amplitude are 0.967 and 0.685 mVpp at the position 2. The coeffiecient correlation between the standard HRV and proposed electrode-HRV is 0.999

평면 광도파로 상의 식각 브래그 격자를 이용한 광온도 센서의 개발 (Optical Temperature Sensor Based on the Etched Planar Waveguide Bragg Grating Considering Linear Thermo-optic Effect)

  • Kook-Chan Ahn;Sang-Mae Lee
    • 한국안전학회지
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    • 제16권2호
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    • pp.121-129
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    • 2001
  • 본 논문은 식각된 평면 광도파 브래그 격자를 이용한 광온도 센서의 개발에 대한 연구로써 식각된 평면 도파로 브래그 격자의 설계, 제작, 격자 특성 연구 및 온도 측정 가능성을 주 연구 목적으로 하고 있다. 평면 식각 브래그 격자 센서의 전형적 대역폭과 그 반사도는 각각 ~l,522nm의 파장에서 ~0.2nm와 ~7%이며, 20$0^{\circ}C$까지 온도가 변화하는 동안 온도 변화에 따른 브래그 파장의 변화는 약간의 비선형성을 보였다. 광도파로와 판변형이론에 기초한 브래그 격자의 온도 변화에 따른 광파장 응답을 예측하기 위한 이론적 모델은 실험과 비교할 때 허용 오차내에서 잘 일치하고 있다.

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