• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.187-192
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• 2011

Abrasive blaster is similar to sand blaster, and effectively removes hard and brittle materials. Exiting abrasive blaster has applied to rough working such as deburring and rough finishing. As the need for machining of ceramics, semiconductor, electronic devices and LCD are increasing, micro abrasive blaster was developed, and became the inevitable technique to micromachining. This paper describes the performance of the micro blaster in MEMS process of glass and succeed in domestically producing complete micro blaster. Diameter of hole and width of line in this etching is 100 ${\mu}m$ ~ 1000 ${\mu}m$. Experimental results showed good performance in micro channel and hole in glass wafer. Therefore, this micro blaster could be effectively applied to the micro machining of semiconductor, micro PCR chip.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1951-1956
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• 2008

Various MEMS accelerometers are used in engineering applications including automobiles, mobile phones, military systems, and electronic devices. Among them, the thermal accelerometer employing the temperature difference induced by the convective flow inside the micro cavity has been a topic of interest. As the convective sensor does not utilize a solid proof mass, it is compact, lightweight, inexpensive to manufacture, sensitive and highly endurable to mechanical shock. However, the complexity of the convective flow and various design constraints make optimization of a device a crucial step before fabrication. In this work, optimization of a 2-axis thermal convective MEMS accelerometer is conducted based on 3-dimensional numerical simulation. Parametric studies are performed by varying the several design variables such as the heater shape/size, the cavity size and types of the gas medium and the position of temperature probes in the sensor. The results of optimal design are presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1237-1241
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• 2003

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.575-580
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• 2002

To evaluate elastic and micro-failure properties of MEMS materials, the electro-statically operated test devices were designed and fabricated by micro machining technology. The test structures consist or comb drives for loading and suspending beams in testing. From the analysis of beam displacement based on elastic beam theory, elastic modulus and yield strength of Al film were measured. And, by introducing the micro notch and cyclic loading, the micro-failure was Induced and the micro-fracture toughness of Si film was evaluated. Moreover, the cycles to failure were estimated from the degradation of resonant frequency. Finally, the effects of notch on micro failure were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.372-375
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• 2003

MCA deflection control is a important technology for the development of MEMS applications. In this study, deflection analysis at the MLA/Si diaphragm was investigated by Finite Element Method. Analysis of Si diaphragm combined with MCA has been implemented into the ANSYS (Solid5 and Solid45). On the basis of this structure, deflection versus MCA number of layers has been modelled and MCA/Si contact area characteristics with different diaphragm conditions were analyzed. Consequently, it is expected that fabrication technology of MCA/Si diaphragm could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.652-655
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• 2004

RF MEMS is a miniature device or an array of integration devices and mechanical components and fabricated with If batch-processing techniques. RF MEMS application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF MEMS switches have been developed for the application to the milimeter wave system. RF MEMS switches offer a substantilly higher performance than PM diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool. And stress and distribution are simulated.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1113-1119
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• 2013

In this letter, a new approach is proposed for the design of a multi antenna for MIMO wireless devices. The proposed antenna covers various LTE(Long Term Evolution) service bands: band 17(704~746 MHz), band 13(746~787 MHz), band 5(824~894 MHz), and band 8(880~960 MHz). The proposed main antenna consists of a conventional monopole antenna with an inverted L-shaped slit for wideband operation. The proposed the LTE sub antenna is based on a switch loaded loop antenna structure, with a resonance frequency that can be controlled by capacitance of a logic circuit. The tuning technique for the LTE Rx antenna uses a RF MEMS(Micro-Electro mechanical system) to match the impedances to realize the bands of interest. Because the two proposed antennas are polarized orthogonally to each other, the ECC(Envelope Correlation Coefficient) characteristic between two antennas was measured to be very low (below 0.06) with an isolation characteristic below -20 dB between the two antennas in the operating overall LTE bands. The proposed antenna is particularly attractive for mobile devices that integrate LTE multiple systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1049-1055
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• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.