• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.83-83
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• 2001

• Animal cells and systems
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• v.16 no.4
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• pp.289-294
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• 2012

Histone methylation has diverse functions including transcriptional regulation via its lysine or arginine residue methylation. Studies indicate that deregulation of histone methylation is linked to human cancers including leukemia. Histone H3K27 methyltrnasferase response element II binding protein (RE-IIBP), as a transcriptional repressor to target gene IL-5, interacts with HDAC and is over-expressed in leukemia patient samples. In this study, we have identified that hematopoiesis-related genes GATA1 and HOXA9 are down-regulated by RE-IIBP in K562 and 293T cells. Transient reporter analysis revealed that GATA1 transcription was repressed by RE-IIBP. On the other hand, HOXA9 and PBX-related homeobox gene MEIS1 was up-regulated by RE-IIBP. These results suggest that RE-IIBP might have a role in hematopoiesis or leukemogenesis by regulating the transcription of target genes, possibly via its H3K27 methyltransferase activity.

• Journal of the Korean Society of Marine Environment & Safety
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• v.24 no.6
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• pp.726-734
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• 2018

The total number of Sea Area Utilization Consultation in the environment management sea areas reviewed from 2015 to 2017 were 60. The number of development projects in the environment conservation sea areas decreased steadily, but special management sea areas increased. Development types in environment management sea areas showed that artificial structure installation was the highest ratio, followed by fishery port development and construction of habor and coastal maintenance and sea water intake and draining. By comparing the trend of water quality changes using marine environment information system (MEIS) data in the environment management areas from 2006 to 2017, COD showed no significant changes but the environment conservation sea areas increased slightly, and the concentration of TN and TP decreased. Gwangyang and Masan bays in the special management sea areas and Gamak bay in the environment conservation sea areas displayed oxygen deficient mass in the summer. As the use of development projects of the environment management sea areas are performed continuously, an analysis of the status of sufficient water quality changes is necessary for environmental impact assessment (Sea Area Utilization Consultation) in the marine environment and should be evaluated mainly for management of contamination by diagnosing thoroughly water quality effects and the pollution of sediment. Especially, the water quality goal for the purpose of designation in each of the environment management sea areas is set clearly, connection with pollution source control and the total pollution load management system (TPLMS) should be proposed and measured to reduce the amount of contaminated water.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.136-136
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• 1996

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.5-7
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• 2002

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

• Proceedings of KOSOMES biannual meeting
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• 2018.06a
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• pp.143-143
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• 2018

최근 3년간 환경관리해역(환경보전해역 및 특별관리해역)에서 이루어진 해역이용협의 검토 건수는 총 60건으로 조사되었다. 환경보전해역에서는 2015년 9건, 2016년 7건, 2017년 3건으로 지속적으로 감소하였고, 특별관리해역에서는 2015년 12건, 2016년 13건, 2017년 16건으로 증가하는 양상을 나타내었다. 환경관리해역의 개별사업 유형을 분석한 결과, 인공구조물 설치사업이 가장 높은 비율을 차지하였으며, 그 다음으로 항만 어항개발, 연안정비 및 해수 인 배수 사업유형이 많이 이루어진 것으로 분석되었다. 환경관리해역에서 국가해양환경정보통합시스템(MEIS) 자료를 참고하여 생태기반 해수수질 평가지수(WQI)와 경년별 수질변화경향을 비교한 결과, COD는 뚜렷한 증감의 변화는 보이지 않았으나 TN과 TP의 농도는 다소 감소하는 경향을 보였다. 특별관리해역인 광양만과 마산만 및 환경보전해역인 가막만에서는 빈산소수괴가 출현하였다. 이러한 환경관리해역에서의 이용 개발행위가 지속적으로 이루어지고, 이에 따른 해역이용협의서 등 해양환경부문 환경영향평가시에는 충분한 수질변화에 대한 실태분석 및 사업추진에 따른 수질영향을 철저히 진단해서 오염원관리에 대한 대책이 중점적으로 평가되어야 할 것으로 판단된다. 특히, 각 환경관리해역의 지정 목적에 따른 유지 수질목표를 명확히 설정할 필요가 있다. 또한, 개발사업에 따른 협의 평가과정에서의 검증을 위하여 환경관리해역에서의 수질 및 퇴적물에 대한 모니터링 및 분석결과에 대한 정도관리가 더욱 강화되어야 할 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.40-41
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• 2002

차세대 반도체 및 나노소자 산업에 대한 국제적 기술은 고밀도 직접화의 추세에 따라서 .게이트 산화막의 두께가 급속히 작아지는 추세이다. 지금까지 이산화규소(A1₂O₃)가 게이트 산화막으로 주로 사용되어 왔으나 점차 SiON 혹은 high k 박막으로 바뀌고 있다. 본 연구에서는 차세대 반도체 소자에 사용될 게이트 산화막 물질인 SiON 박막과 Al₂O₃박막에 대한 SE(Spectroscopic Ellipsometry)분석 모델을 확립하였고, SE 측정결과를 TEM, MEIS, XRR의 결과들과 비교하였다. SiON 박막의 굴절률 값은 Si₃N₄와 SiO₂가 물리적으로 혼합되어 있다고 가정하여 Bruggeman effective medium approximation을 사용하여 구하였다. 동일한 시료를 절단하여 TEM, MEIS, 그리고 XRR에 의하여 SiON 박막의 두께를 측정하였으며, 그 결과 SE와 XRR에 의해 얻어진 박막두께가 TEM과 MEIS의 결과 값보다 약 0.5 nm 크게 주어짐을 알 수 있었다(Table 1 참조). 본 연구결과는 비파괴적이며 비접촉식 측정방법인 SE가 2～4nm 두께의 초미세 SiON 박막의 두께와 N 농도의 상대적 값을 빠르고 쉽게 구할 수 있는 유용한 측정방법 임을 보여주었다. 기존의 게이트 산화물인 SiO₂를 대체할 후보 물질들 중의 하나인 A1₂O₃의 유전함수를 구하기 위하여 8 inch, p-type 실리콘 기판 위에 성장된 5 nm, 10 nm, 및 20 nm 두께의 A1₂O₃ 박막의 유전함수와 두께를 측정하였다. 이 시료들에 대한 SE data는 vacuum-UV spectroscopic ellipsometer를 사용하여 세 개의 입사각에서 0.75 eV에서 8.75 eV까지 0.05 eV 간격으로 측정되었다. A1₂O₃ 박막의 유전함수와 두께를 얻기 위하여 공기층/A1₂O₃ 박막/Si 기판으로 구성된 3상계 모델을 사용하였다. Si 기판에 대한 복소 유전함수는 문헌상의 값(1)을 사용하였고, A1₂O₃ 박막의 유전함수는 5개의 미지상수를 갖는 Tauc- Lorentz(TL) 분산함수(2)를 사용하였다. A1₂O₃ 박막의 경우 두께가 증가함에 따라서 굴절률이 커짐을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.