• Title/Summary/Keyword: M2 polarization

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Synthesis and Optically Characterization of Bragg Structure Porous Silicon (다층 다공성 실리콘의 합성과 그 광학적 특성 조사)

  • Kim, Sung Gi
    • Journal of Integrative Natural Science
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    • v.2 no.1
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    • pp.45-49
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    • 2009
  • Electrochemical etching of heavily doped p-type silicon wafers (boron doped, <100> orientation, resistivity; $0.8-1.2m{\Omega}/cm$) with different current density resulting two different refractive indices resulted in DBR (Distributed Bragg Reflectors) porous silicon, which exhibited strong in-plane anisotropy of refractive index (birefringence). Dielectric stacks of birefringent porous silicon acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in depth) variation of the refraction index. Optical characteristics of DBR porous silicon were investigated.

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Charicteristics of PAN-PZT Thick Films on Si-Substrate by Screen Printing (스크린 프린팅법으로 제조된 PAN-PZT 후막의 특성)

  • 김상종;최지원;김현재;성만영;윤석진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.139-142
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    • 2002
  • Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

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Correlation between Magnetic-field directions and intensity gradients in Orion A region

  • Hwang, Jihye;Kim, Jongsoo
    • The Bulletin of The Korean Astronomical Society
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    • v.43 no.1
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    • pp.67.2-67.2
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    • 2018
  • Magnetic fields play an important role in star-forming processes by regulating gravitational collapse. In filamentary structures of star-forming regions, magnetic fields are likely to be aligned with minor axes of filamentary molecular clouds because matter freely moves along magnetic field lines. Orion A region, one of the well-known high-mass star forming regions, has long filament structure. In order to study magnetic field directions with respect to the filamentary structure in Orion A, we have analyzed $850{\mu}m$ dust polarization observations obtained with the James Clerk Maxwell Telescope (JCMT). We found tight correlation of dust intensity gradients and magnetic field directions. It was estimated that 81% of magnetic field segments are aligned with density gradients within 40 degree. In conclusion, we confirmed most of magnetic field segments are perpendicular to the major axis of the filament in Orion A.

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A Study on the Development of Al Alloy for the Vehicle Connecting Rod Using Hot Forging (열간단조공법을 이용한 컨로드용 Al 합금의 개발에 관한 연구)

  • Kim, S.H.;Hwang, T.M.
    • Journal of Power System Engineering
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    • v.12 no.1
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    • pp.66-71
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    • 2008
  • Alumium alloys hot forging process are gaining increased acceptance in the automotive and electronic industries and hot forging is one of the most efficient manufacturing method for mass product parts. It has been investigated the microstructures and mechanical properties of Al-11.7Si-0.5Mg (KNT40-T6)alloy fabricated by hot forging process for development of connecting rod in this study. The microstructure of hot forged specimen was composed of eutectic structure of alumimum solid solution and $Mg_2Si$ precipitates. The tensile strength of solutionized Al-11.7Si-0.5Mg alloy was 217MPa. This alloy showed a good corrosion resistance using electrochemical polarization test.

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Fabrication and characteristics of PZT ferroelectric thin films by Sol-Gel processing and rapid thermal annealing (Sol-gel법과 급속 열처리에 의한 PZT 강유전 박막의 제작과 그 특성)

  • 백동수;최형욱;김준한;신현용;김규수;박창엽
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.369-375
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    • 1994
  • In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

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A Transverse Load Sensor with Reconfigurable Measurement Accuracy Based on a Microwave Photonic Filter

  • Chen, Han;Li, Changqing;Min, Jing
    • Current Optics and Photonics
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    • v.2 no.6
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    • pp.519-524
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    • 2018
  • We propose a transverse load sensor with reconfigurable measurement accuracy based on a microwave photonic filter in the $K_u$ band, incorporating a polarization-maintaining fiber Bragg grating. A prototype sensor with a reconfigurable measurement accuracy tuning range from 6.09 to 9.56 GHz/(N/mm), and corresponding minimal detectable load range from 0.0167 to 0.0263 N/mm, is experimentally demonstrated. The results illustrate that up to 40% manufacturing error in the grating length can be dynamically calibrated to the same corresponding measurement accuracy for the proposed transverse load sensor, by controlling the semiconductor optical amplifier's injection current in the range of 154 to 419 mA.

Atomic Layer Deposition of Vanadium Pentoxide on Carbon Electrode for Enhanced Capacitance Performance in Capacitive Deionization

  • Chung, Sangho;Bong, Sungyool;Lee, Jaeyoung
    • Applied Chemistry for Engineering
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    • v.33 no.3
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    • pp.315-321
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    • 2022
  • We firstly observed that activated carbon (AC) deposited by atomic-layer vanadium pentoxide (V2O5) was used as CDI electrodes to utilize the high dielectric constant for enhancing the capacitance equipped with atomic layer deposition (ALD). It was demonstrated that the vanadium pentoxide (V2O5) with sub-nanometer layer was effectively deposited onto activated carbon, and the electric double-layer capacitance of the AC was improved due to an increase in the surface charge density originated from polarization, leading to high ion removal in CDI operation. It was confirmed that the performance of modified-AC increases more than 200%, comparable to that of pristine-AC under 1.5 V at 20 mL min-1 in CDI measurements.

A Study on the Effectiveness of Radar Rainfall by Comparing with Flood Inundation Record Map Using KIMSTORM (Grid-based KIneMatic Wave STOrm Runoff Model) (분포형 강우유출모형 KIMSTORM을 이용한 침수실적자료와의 비교를 통한 레이더강우의 효용성 연구)

  • Ahn, So Ra;Jung, Chung Gil;Kim, Seong Joon
    • Journal of Korea Water Resources Association
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    • v.48 no.11
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    • pp.925-936
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    • 2015
  • The purpose of this study is to explore the effectiveness of dual-polarization radar rainfall by comapring with the flood inundation record map through KIMSTORM(Grid-based KIneMatic wave STOrm Runoff Model). For Namgang dam ($2,293km^2$) watershed, the Bisl dual-polarization radar data for 3 typhoons (Khanun, Bolaven, Sanba) and 1 heavy rain event in 2012 were prepared. For both 28 ground rainfall data and radar rainfall data, the model was calibrated using observed discharge data at 5 stations with $R^2$, Nash and Sutcliffe Model Efficiency (ME) and Volume Conservation Index (VCI). The calibration results of $R^2$, ME and VCI were 0.85, 0.78 and 1.09 for ground rainfall and 0.85, 0.79, and 1.04 for radar rainfall respectively. The flood inundation record areas (SY and MD/SG district) by typhoon Sanba were compared with the distributed modeling results. The spatial distribution by radar rainfall produced more surface runoff from the watershed and simulated higher stream discharge than the ground rainfall condition in both SY and MD/SG district. In case of MD/SG district, the stream water level by radar rainfall near the flood inundation area showed 0.72 m higher than the water level by ground rainfall.

Influence of Polarization Behaviors on the ECM Characteristics of SnPb Solder Alloys in PCB (PCB에서의 ECM 특성에 미치는 SnPb 솔더 합금의 분극거동의 영향)

  • Lee Shin-Bok;Yoo Young-Ran;Jung Ja-Young;Park Young-Bae;Kim Young-Sik;Joo Young-Chang
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.167-174
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    • 2005
  • Smaller size and higher integration of electronic components make smaller gap between metal conducting layers in electronic package. Under harsh environmental conditions (high temperature/humidity), electronic component respond to applied voltages by electrochemically ionization of metal and metal filament formation, which lead to short failure and this phenomenon is termed electrochemical migration(ECM). In this work, printed circuit board(PCB) is used for determination of ECM characteristics. Copper leads of PCB are soldered by eutectic solder alloys. Insulation breakdown time is measured at $85^{\circ}C,\;85{\%}RH$. CAF is the main mechanism of ECM at PCB. Pb is more susceptible to CAF rather than Sn, which corresponds well to the corrosion resistance of solder materials in aqueous environment. Polarization tests in chloride or chloride-free solutions fur pure metal and eutectic solder alloys are performed to understand ECM characteristics. Lifetime results show well defined log-normal distribution which resulted in biased voltage factor(n=2) by voltage scaling. Details on migration mechanism and lifetime statistics will be presented and discussed.

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Dielectric Properties in the Pb1-3x/2Lax[(Mg1/3Ta2/3)0.66Zr0.34]O3 Systems

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.70-73
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    • 2017
  • The dielectric constant and loss of poling/non-poling was measured in the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ samples. The addition of $La^{3+}$ to the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ did not cause a large change in grain size. But the addition of $La^{3+}$ did show transition temperature, which shifted toward low temperature in the $Pb[(Mg_{1/3}Ta_{2/3})Zr]O_3$ systems. In addition, the dielectric and pyroelectric properties (${\varepsilon}{\sim}20000$, $p{\sim}0.03C/m^2K$) of this system using $La^{3+}$ have been greatly improved. Pyroelectrics $Pb_{0.97}La_{0.02}(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ system was found to have a relatively high ferroelectric FOMs ($F_V{\sim}0.035m^2/C$, $F_D{\sim}0.52{\times}10^{-4}Pa^{-1/2}$) at room temperature. Spontaneous polarization showed a value of $0.27{\sim}0.35C/m^2$ in the composition added to $La^{3+}$. The piezoelectric constant ($d_{33}=350{\sim}490pC/N$) and electromechanical coupling factor ($k_P=0.25{\sim}0.35$) are obtained in $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ compositions with $La^{3+}$ dopant.