• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.251-251
• /
• 2011

ZnO는 투명전극, 태양전지, 광전소자, 다이오드, 센서, 산화물 TFT 등에 널리 사용되는 재료로서, hexagonal wurtzite 결정구조, 약 3.37eV 정도의 넓은 밴드갭, 60mV의 여기 바인딩 에너지를 가지는 것으로 알려져있다. 순수한 ZnO 박막은 일반적으로 n-형 특성을 나타내고 있지만, ZnO-based 광전소자 분야에서는 p-형 전도의 부족이라는 큰 단점을 가지고 있으며 광전소자로서의 ZnO의 응용에서 n-형과 p-형 전도는 둘다 필수적이다. 또한 ZnO 박막의 억셉터 농도를 증가시키기 위해서 억셉터(N,P)와 도너(Ga,Al,In)를 동시치환시킨 몇몇 연구가 있어왔다.본 연구에서는 Al과 P를 동시치환시킨 Al0.02-XP0.01+xZn0.970 (x=0, 0.005, 0.01) 조성에서 산소 분압을 변화 시켰을때의 박막의 구조적, 전기적 특성에 대해 관찰하였다. 박막의 경우는 c-plane 사파이어 기판에서 PLD 로 증착시켰다.

• 한국재료학회지
• /
• 제16권8호
• /
• pp.479-484
• /
• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.

• Nuclear Engineering and Technology
• /
• 제54권2호
• /
• pp.523-531
• /
• 2022

In order to study the sensitivity and the uncertainty of the Moroccan research reactor TRIGA Mark II, a model of this reactor has been developed in our ERSN laboratory for use with the N-Particle MCNP Monte Carlo transport codes (version 6). In this article, the sensitivities of the effective multiplication factor of this reactor are evaluated using the ENDF/B-VII.0, ENDF/B-VII.1 and JENDL-4.0 libraries and in 44 energy groups, for the cross sections of the fuel (U-235 and U-238) and the moderator (H-1 and O-16). However, the quantification of the uncertainty of the nuclear data is performed using the nuclear code NJOY99 for the generation and processing of covariance matrices. On the one hand, the highest uncertainty deviations, calculated using the ENDFB-VII.1 and JENDL4.0 evaluations, are 2275, 386 and 330 pcm respectively for the reactions U₂₃₅(n, f), $ U_{235}(n\bar{\nu})$ and H₁(n, γ). On the other hand, these differences are very small for the neutron reactions of O-16 and U-238. Regarding the neutron spectra, in CT-mid plane, they are very close for the three evaluations (ENDF/B-VII.0, ENDF/B-VII.1 and JENDL-4.0). These spectra present two peaks (thermal and fission) around the energies 0.05 eV and 1 MeV.

• 한국의학물리학회지:의학물리
• /
• 제26권3호
• /
• pp.178-184
• /
• 2015

마커스 전리함은 치료용 전자선의 흡수선량 측정에 널리 사용되는 소형 평행 평판형 전리함이다. 특히 TRS-398 프로토콜에서는 $R_{50}<4.0g/cm^2$ (약 10 MeV 이하)에서 평행 평판형 전리함의 사용을 권고하고 있다. 그러나 TRS-398 프로토콜에서 $R_{50}<2.0g/cm^2$ (약 4 MeV 이하)에 대한 선질보정인자($k_{Q,Q_0}$)가 없어 낮은 에너지에 대한 선량측정이 필요한 경우에 마커스 전리함을 사용할 수 없다. 본 연구에서는 몬테칼로 계산(DOSRZnrc/EGSnrc)과 선량학적 계산을 이용하여 전자선 선질 $R_{50}=1.0$, 1.4, 2.0, 2.5, 3.0, $5.0g/cm^2$에 대하여 마커스 전리함(PTW-M34045)에 대한 $k_{Q,Q_0}$를 결정하였다. 본 연구에서는 결정된 $k_{Q,Q_0}$에 대해 TRS-398 및 TG-51 프로토콜의 자료와 알려진 자료들을 이용하여 평가하였다.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2003년도 ICCAS
• /
• pp.197-202
• /
• 2003

This paper describes realtime walking based on sensory information. In this study, a biped robot having a trunk is considered. The motion of the trunk balances the whole body of the biped robot while the legs locomotes on the ground. How to calculate the motion of the trunk is proposed using the ZMP concept. Also, an online walking pattern is discussed which is generated in realtime on the basis of walking parameters selected by visual and auditory sensors. In order to realize biped walking, we have constructed a forty-three degrees of freedom biped robot, WABIAN-RV (WAseda BIped humANoid robot-Revised V). Its height is 1.89[m] and its total weight is 131.4[kg]. Various walking experiments using WABIAN-RV are conducted on the plane, and the validity of its mechanism and control is verified.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
• /
• pp.72-75
• /
• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권8호
• /
• pp.794-799
• /
• 1997

Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.395-395
• /
• 2013

GaN는 LED, 태양전지, 그리고 전자소자 등에 쓰이는 물질로, 관련 연구가 활발히 진행되고 있으며, 이와 더불어 top-down방식을 활용한 소자제작 방법 또한 발달되고 있다. 하지만, 일반적으로 LED 제작에 사용되는 c-plane GaN의 경우, c축 방향으로 발생하는 분극의 영향을 받게되며, 분극은 LED내 양자우물의 밴드를 기울게 하여 전자와 홀의 재결합률을 감소시켜 낮은 내부양자효율을 야기한다. 이러한 문제를 해결하기 위해 여러 가지 방법들이 제시되었으며, 그 중에서도 a면, 혹은 m면과 같은 nonpolar면을 사용하는 GaN LED가 주목받고 있다. 본 연구에서는, top-down방식을 통해 약 $2{\mu}m$ 크기의 diameter를 갖는 micro-sized column LED를 구현하였으며, 식각 후 드러나는 semipolar면을 wet treatment를 통해 제거하여 nonpolar면을 드러나게 하였으며, 이 면에 Ni/Au를 contact하여, 전기적, 광학적 특성을 논하였다. Fig. 1은 I-V 특성 그래프이며, Fig. 2는 EL측정 결과(광학적 특성)이다.

• Journal of Electrical Engineering and Technology
• /
• 제7권2호
• /
• pp.221-224
• /
• 2012

We propose a Readout Integrated Circuit (ROIC), which applies a fixed current bias sensing method to the input stage in order to simplify the circuit structure and the infrared sensor characteristic control. For the sample-and-hold stage to display and control a signal detected by the infrared sensor using a two-dimensional (2D) focal plane array, a differential delta sampling (DDS) circuit is proposed, which effectively removes the FPN. In addition, the output characteristic is improved to have wider bandwidth and higher gain by applying a two-stage variable gain amplifier (VGA). The output characteristic of the proposed device was 23.91 mV/$^{\circ}C$, and the linearity error rate was less than 0.22%. After checking the performance of the ROIC using HSPICE simulation, the chip was manufactured and measured using the SMIC 0.35 um standard CMOS process to confirm that the simulation results from the actual design are in good agreement with the measurement results.

• Journal of applied mathematics & informatics
• /
• 제41권4호
• /
• pp.811-819
• /
• 2023

In this research we have used the definition of standard fractional vector cross product to obtain fractional curl and fractional field of a standing wave, a travelling wave, a transverse wave, a vector field in xy plane, a complex vector field and an electric field. Fractional curl and fractional field for a complex order are also discussed. We have supported the study with calculation of impedance at γ = 0, 0 < γ < 1, γ = 1. The formula discussed in this paper are useful for study of polarization, reflection, impedance, boundary conditions where fractional solutions have applications.