• Proceedings of the KIEE Conference
• /
• 2007.04a
• /
• pp.286-288
• /
• 2007

In this paper, the fast locking PLL Frequency Synthesizer with low phase noise in a 0.18um CMOS process is presented. Its main application IS for the 915MHz ISM band wireless transponder upon the CPFSK (Continuous Phase Frequency Shift Keying) modulation scheme. Frequency synthesizer, which in this paper, is designed based on self-biased techniques and is independent with processing technology when damping factor and bandwidth fixed to most important parameters as operating frequency ratio, broad frequency range, and input phase offset cancellation. The proposed frequecy synthesizer, which is fully-integrated and is in 320M $^{\sim}$ 960MHz of the frequency range with 10MHz of frequency resolution. And its is implemented based on integer-N architecture. Its power consumption is 50mW at 1.8V of supply voltage and core area is $540{\mu}m$ ${\times}$ $450{\mu}m$. The measured phase noises are -117.92dBc/Hz at 10MHz offset, with low settling time less than $3.3{\mu}s$.

• Publications of The Korean Astronomical Society
• /
• v.22 no.4
• /
• pp.177-181
• /
• 2007

We present the sensitivity calculation results for observing the Cosmic Infrared Background (CIRB) by the Multi-purpose IR Imaging System (MIRIS), which will be launched in 2010 as a main payload of the Science and Technology Satellite 3 (STSAT-3). MIRIS will observe in I ($0.9{\sim}1.2um$) and H ($1.2{\sim}2.0um$) band with a $4{\times}4$ degree field of view to obtain the large scale structure (${\sim}3$ degree) of the CIRB. With the given specifications of the MIRIS, our sensitivity calculation results show that the MIRIS has a detection limit of ${\sim}9\;nW\;m^{-2}\;sr^{-1}$ (I band) and ${\sim}6\;nW\;m^{-2}\;sr^{-1}$ (H band), which is appropriate to observe the large scale structure of CIRB.

• ETRI Journal
• /
• v.31 no.3
• /
• pp.247-253
• /
• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.11C no.4
• /
• pp.99-106
• /
• 2001

An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

• Journal of the Korea Society of Computer and Information
• /
• v.18 no.10
• /
• pp.63-70
• /
• 2013

In this paper, we investigated frequency synchronization through computer simulation of digital M/W transmission system in multipath fading channel. we suggested frequency offset correction algorithm against frequency offset between transmitter and receiver, then evaluated the degree of constellation performance enhancement. From the performance evaluation, in case of large frequency offset, although adopting frequency offset correction scheme, residual frequency offset degraded system performance. As a result, according to frequency offset value between transmitter and receiver residual frequency offset affects system performance significantly. The results of this paper should be utilized for frequency synchronization criterion when frequency band of broadcasting system is rearranged.

• Current Optics and Photonics
• /
• v.2 no.4
• /
• pp.356-360
• /
• 2018

We demonstrate continuous-wave operation of an all-fiber thulium-holmium codoped laser operating at a wavelength of 1706.3 nm. To realize laser operation in the short-wavelength region of the emission-band edge of thulium in silica fiber, we employ fiber Bragg gratings having resonant reflection at a wavelength around 1700 nm as a wavelength-selective mirror in an all-fiber cavity scheme. We first examine the performance of the laser by adjusting the central wavelength of the in-band pump source. Although a pump source possessing a longer wavelength is observed to provide reduced laser threshold power and increased slope efficiency, because of the characteristics of spectral response in the gain fiber, we find that the optimal pump wavelength is 1565 nm to obtain maximum laser output power for a given system. We further explore the properties of the laser by varying the fiber gain length from 1 m to 1.4 m, for the purpose of power scaling. It is revealed that the laser shows optimal performance in terms of output power and slope efficiency at a gain length of 1.3 m, where we obtain a maximum output power of 249 mW for an applied pump power of 2.1 W. A maximum slope efficiency is also estimated to be 23% under these conditions.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2002.11a
• /
• pp.205-208
• /
• 2002

This paper presents a quantitative analysis on the intermodulation product between transmitter W-CDMA leakage signal and receiver out of band blocker, and proposes design guide lines for overcoming the effect in receiver design. Our analysis shows that duplexer isolation, attenuation and LNA IIP3 are mainly responsible for the 3rd order intermodulation product. Analysis also shows that LNA IIP3 required for meeting 3GPP TS 34.121 specification is about 1 ㏈m with duplexer isolation of 50 ㏈ and duplexer attenuation of 24㏈.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.246-249
• /
• 2007

A triple-band antenna was developed and fabricated by LDS(Laser Direct Structuring) process. The effects of the plating rate and heat treatment condition were investigated and the gains of fabricated antennas were measured at various frequencies. The laser irradiated surface shows clearly that there are prominence and depression. It shows anchoring effect between a plating material and ablation surface. The plating rate was decreased when the plating material is exhausted in the solution. This solution needs to refreshed by the new aid solution. The copper plating thickness is decreased with the increase of heat treatment temperature in the same time but it does not change other condition. The gain of LDS antenna showed higher than the generally processed antenna. This result was related with practical use of the dimension and effective dielectric constant.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.10
• /
• pp.892-899
• /
• 2016

In this paper, an X-band 50 W internally matched power amplifier is designed and fabricated using an $80{\times}150{\mu}m$ GaN HEMT that is developed by the $0.25{\mu}m$ GaN HEMT process of ETRI. The optimum source and load impedances are experimentally extracted from the loadpull measurement using impedance-transform-prematching circuits, and the transistor performance is predicted. The power performance of the internally matched power amplifier, whose matching circuits are fabricated on a substrate with ${\varepsilon}_r$ of 10.2, is measured under the pulsed mode of $100{\mu}s$ pulse period and 10 % duty cycle, and the best output power of 47.46 dBm(55.5 W) and the power-added efficiency of 46.6 % are obtained at 9.2 GHz. The output power of 47~47.46 dBm(50~55.7 W) is measured in 9.0~9.5 GHz, and the power-added efficiency is measured to be greater than 43 % in 9.0~9.3 GHz and above 36 % in 9.4~9.5 GHz.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.8 no.6
• /
• pp.64-72
• /
• 2009

In this paper, a high efficiency 2.45 GHz rectenna with a microstrip patch antenna and a dual-mode band-pass filter in which the 2nd and 3rd harmonics are suppressed, is presented. From the experimental results, the 2.45GHz rectenna using 3rd harmonic suppressed dual-mode BPF shows the conversion efficiency of 41.6% with incident power density of 0.3 mW/cm2 and the received power of 1.66 mW. This result shows high conversion efficiency because the received power of this rectenna is lower than other rectennas to be compared with. This rectenna can be applied to the WPT (Wireless Power Transmission) field for energy harvesting. Also, it is expected to be used to provide the stand-by power for the low power devices for USN, and wireless power transfer in sensor application of MEMS devices.