• Title/Summary/Keyword: M/W Band

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Design and fabrication of current limiting InP Gunn diode for W-band waveguide FTO (W-band 도파관 FTO 적용을 위한 전류제한 InP Gunn diode 설계 및 제작)

  • Ko, Dong-Sik;Kwak, No-Seong;Kim, Young-Jin;Heo, Jun-Woo;Ko, Pil-Seok;Kim, Sam-Dong;Park, Hyun-Chang;Rhee, Jin-Koo;Chun, Young-Hoon;Lee, Seok-Chul
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.3
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    • pp.45-54
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    • 2014
  • In this paper, We have designed and fabricated 20 InP Gunn diodes using a current limiting epitaxial structure by MINT's optimized fabrication processes. We have also packaged the fabricated InP Gunn diodes using our optimized packaging method, and then designed and fabricated a W-band waveguide FTO to measure characteristics of the packaged InP Gunn diodes. The packaged InP Gunn diode have a ceramic ring, a Au plated stud and a lid, and a Maltese cross. The fabricated InP Gunn diodes have good RF characteristics such as high output powers (11.8~17 dBm) and limiting low currents (less than 400 mA) between 92.9 and 94.78 GHz.

A 20 W GaN-based Power Amplifier MMIC for X-band Radar Applications

  • Lee, Bok-Hyung;Park, Byung-Jun;Choi, Sun-Youl;Lim, Byeong-Ok;Go, Joo-Seoc;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.23 no.1
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    • pp.181-187
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    • 2019
  • In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Han, Byoung-Gon;Yom, In-Bok
    • ETRI Journal
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    • v.36 no.3
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    • pp.498-501
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    • 2014
  • A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

A 4W GaAs Power Amplifier MMIC for Ku-band Satellite Communication Applications

  • Ryu, Keun-Kwan;Ahn, Ki-Burm;Kim, Sung-Chan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.4
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    • pp.501-505
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    • 2015
  • In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.

A Comparison of ERBE and AVHRR Longwave Flux Estimates (ERBE와 AVHRR에 의하여 추정된 지구의 장파복사량 비교)

  • 오성남
    • Korean Journal of Remote Sensing
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    • v.6 no.2
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    • pp.75-88
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    • 1990
  • NOAA 위성의 narrow-band AVHRR(Advanced Very. High Resolution Radiometer) 적 외선 채널과 broad-band 0.2 - 50$\mu\textrm{m}$ 영역의 ERBE(Earth Radiation Budget Experiment) scanning instrument에 의하여 관측된 radiance로부터 추정된 지구의 대기 외장파복사량 (Outgoing Longwave Radiation:OLR) 이 비교조사되었다. 이를 위하여 1985년 4월, 7월, 10월과 1986년 1월에 위성에서 관측된 radiance를 각각 이용하였고 비교된 OLR은 위도와 경도가 각각 2.5$^{\circ}$ 간격으로 구분된 grid내에서 일치(collocate)시켜 지역별(zonal), 그리고 전지구(global)규모 로 비교되었다. ERBE와 AVHRR에 의하여 각각 추정된 OLR값의 차(ERBE minus AVHRR)에 의한 분석 결과는 주간의 경우 -1~2 W/m$^2$의 값과 야간의 경우 4~7 W/m$^2$의 값으로 비교적 좋은 일치를 보였지만 이들의 RMS는 하절(6월)에 12 W/m$^2$와 동절(12월)에 5 W/m$^2$의 값으로 다소 높은 차이를 보였다. 한편, 이들 OLR값을 관측지역에 따라 큰 차 이를 나타내어 사막지역과 아열대고기압(subtropical ocean)대에서는 상반된 결과를 보였다. 이들 지역에 대한 차이는 지역적 기온구조와 지표온도의 영향을 다 고려하지 못하고 OLR 측정치를 도 출하는 대기복사모델(radiation model)의 regional systematic bias에서 기인된 것으로 해석된다. 즉 사막의 지표역전층에 대한 AVHRR과 해면의 대기구조에 대한 ERBE의 OLR은 상반된 영향을 보였다.

A Study on the Pattern of Proteins on Electrophoresis in the Porcine Follicular Fluid During Atresia (폐쇄에 따른 돼지 여포액내 단백질의 전기영동 양상에 관한 연구)

  • Kim, Jong-Heup;Yoon, Yong-Dal;Kim, Moon-Kyoo
    • Clinical and Experimental Reproductive Medicine
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    • v.13 no.1
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    • pp.39-51
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    • 1986
  • This experiment has been done to evaluate the relationship between the follicular atresia and the protein patterns on electrophoreais of the follicular fluids in porcine ovary. The protein concentration of the follicular fluids was lower than that of serum, and gradually decreased as the follicle siae became larger. The number of protein bands of follicular fluid on electrophoresis was less than that of serum, and gradually increased as follicle size became larger. Three specific bands were detected on disc PAGE and one band(M W. 75,000) on SDS PAGE in the follicular fluids, while not in serum. One band (A) at ${\beta}$-globulin region on disc PAGE became heavier, as follicles became atretic. Two bands less than(M. W. 20,000) were detected only in the large follicular fluid. Another band(M. W. 43,000) was not detected in necrotic group, whereas all other groups showed it. It could be concluded that the component and composition of the proteins follicular fluids changes according to the follicular size during atresia. Therefore detection of the changing pattern of proteins in the follicular fluid can be used as a basic criterion for the identification of follicular atretic stage.

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A 14-band MB-OFDM UWB CMOS LO Generator (CMOS 공정을 이용한 14개 LO 신호를 발생시키는 MB-OFDM UWB용 LO 생성 회로 블록 설계)

  • Seo, Yong-Ho;Shin, Sang-Woon;Kim, Chang-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.11
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    • pp.65-71
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    • 2010
  • This paper presents a 14-band LO generator architecture for MB-OFDM UWB systems using 3.1 GHz~10.6 GHz frequency band. The proposed LO generator architecture has been consisted of only one PLL and the fewest nonlinear components to generate 14 LO signals with high purity while consuming low dc power consumption. In addition, major spurious generated from the LO generator have been located in the out of UWB band. The proposed LO generator has been implemented in a $0.13-{\mu}m$ CMOS technology and consumes a dc power consumption of 93~103 mW from a 1.5 V supply. The simulation results show an in-band spurious suppression ratio of more than 41 dBc and a band-switching time of below 3 nsec.

Effect of Polyamines on purified DNA Methyltransferase from Chlamydomonas reinhardtii (Chlamydomonas reinhardtii로부터 분리, 정제된 DNA Methyltransferase 활성에 대한 Polyamine의 영향)

  • 이명민
    • Journal of Plant Biology
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    • v.32 no.4
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    • pp.331-341
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    • 1989
  • DNA methyltransferase was purified 282.6-fold from Chlamydomonas reinhardtii 21gr (mt+) gametic cell to examine the effect of polyamine on the enzyme acctivity. Polyacrylamide gel electrophoresis(PAGE) revealed at least three bands(1 major band, 2 minor bands). Among these, the major band represents DNA methyltransferase. Polyacrylamide gel electrophoresis in the presence of 0.1% sodium dodecylsulfate(SDS-PAGE) revealed a major band with M.W. 60,000. DNA methyltransferase activity was inhibited more effectively by spermine than by spermidine, and the inhibition by putrescine was smaller than spermine and spermidine. DNA methyltransferase activity was inhibited by 40% and 53% at 5mM and 20mM spermine, respectively. In the case of spermidine, the inhibition was 35% at 10mM and 44% at 20mM. However, the inhibition by putrescine appeared only above 5mM and reached about 25% at 20mM.

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Development of a Two-Stage High Gain D-Band MMIC Drive Amplifier Using $0.1{\mu}m$ Metamorphic HEMT Technology ($0.1{\mu}m$ Metamorphic HEMT를 이용한 고이득 D-Band MMIC 2단 구동증폭기 개발)

  • Lee, Bok-Hyung;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.12
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    • pp.41-46
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    • 2008
  • We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

Low Conversion Loss and High Isolation W-band MMIC Mixer Module (낮은 변환 손실 및 높은 격리 특성의 W-band MMIC 믹서 모듈)

  • An, Dan;Rhee, Jin-Koo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.2
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    • pp.50-54
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    • 2015
  • In this paper, we report on a high performance 94 GHz MMIC mixer module using 0.1-um metamorphic high electron mobility transistors (MHEMTs). A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO-RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW-waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 dB and 9.5 dB, and LO-RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W-band (75-110 GHz) MMIC mixers.