• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.57-60
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• 2002

In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.85-88
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• 2010

Deep blue organic light emitting diodes (OLEDs) were fabricated using 5 wt.% doped BCzVBi with various blue host materials such as NPB, DPVBi, MADN and TPBi. A blue OLED device, using DPVBi as host material, was constructed via NPB ($500\;{\AA}$) / DPVBi:BCzVBi ($200\;{\AA}$) / Bphen ($300\;{\AA}$) / LiF ($20\;{\AA}$) / Al ($1,000\;{\AA}$) and it shows a maximum luminescence of $4,838\;cd/m^2$, a current density of $32.7\;mA/cm^2$, a luminous efficiency of 3.3 cd/A and CIExy coordinates of (0.19, 0.15) at 4.5 V whereas the luminous efficiencies and CIExy coordinates of other blue OLEDs using NPB, MADN and TPBi as host materials have 1.1, 2.6 and 2.0 cd/A and (0.15, 0.11), (0.15, 0.10) and (0.15, 0.10), respectively. Energy transfer mechanisms between BCzVBi and its host materials were discussed with an energy band structure of host materials.

• Polymer(Korea)
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• v.36 no.4
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• pp.519-524
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• 2012

Capacitance measurements of the polymer light-emitting diodes (PLEDs) with conjugated polyelectrolyte (CPE) electron transporting layers (ETLs) provide important information of device physics for understanding the function of CPEs as ETLs, together with current density-voltage-luminescence measurements. We investigated the counterion-dependent capacitance behaviors that present a highly negative or positive capacitance at the low frequency, and suggested different carrier injection mechanisms. Capacitance model study reveals that the electron injection mechanism can be described either by the dipole alignment scheme or by electronic charge carrier accumulation at the cathode/ETL/emission layer interfaces.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.221-239
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• 2014

The global demand for energy has been increasing since past decades. Various technologies have been working to find a suitable alternative for the generation of sustainable energy. Photovoltaic technologies for solar energy conversion represent one of the significant routes for the green and renewable energy production. Despite of remarkable improvement in solar cell technologies, the generation of power is still suffering with lower energy conversion efficiency, high production cost, etc. The major problem in improving the PV efficiency is spectral mismatch between the incident solar spectrum and bandgap of a semiconductor material used in solar cell. Luminescent materials such as rare-earth doped phosphor materials having the quantum efficiency higher than unity can be helpful for photovoltaic applications. Quantum cutting phosphors are the most suitable candidates for the generation of two or more low-energy photons for the absorption of every incident high-energy photons. The phosphors which are capable of converting UV photon to visible and near-IR (NIR) photon are studied primarily for photovoltaic applications. In this review, we will survey various near IR quantum cutting phosphors with respective to their synthesis method, energy transfer mechanism, nature of activator, sensitizer and dopant materials incorporation and energy conversion efficiency considering their applications in photovoltaics.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.159-163
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• 2016

Up-conversion (UC) luminescence properties of polycrystalline $Er^{3+}/Yb^{3+}$ doped $NaGd(MoO_4)_2$ phosphors synthesized by a simple solid-state reaction method were investigated in detail. Used to 980 nm excitation (InfraRed area), $Er^{3+}/Yb^{3+}$ co-doped $NaGd(MoO_4)_2$ exhibited very weak red emissions near 650 and 670 nm, and very strong green UC emissions at 540 and 550 nm corresponding to the infra 4f transitions of $Er^{3+}(^4F_{9/2},\;^2H_{11/2},\;^4S_{3/2}){\rightarrow}Er^{3+}(^4I_{15/2})$. The optimum doping concentration of $Er^{3+}$, $Yb^{3+}$ for highest emission intensity was determined by XRD and PL analysis. The $Er^{3+}/Yb^{3+}$ (10.0/10.0 mol%) co-doped $NaGd(MoO_4)_2$ phosphor sample exhibited very strong shiny green emission. A possible UC mechanism for $Er^{3+}/Yb^{3+}$ co-doped $NaGd(MoO_4)_2$ depending on the pump power dependence was discussed.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.16-23
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• 1997

Bismuth germanate crystals well known as scintillator were grown by Czochralski method. In order to understand a mechanism of radiation resistance in Eu-doped BGO, we measured radiation induced-absorption spectra, excitation spectra, emission spectra and luminescence lifetimes of BGO crystals. We found that the charge transfer state of $Eu^{3+}$ ion is to play a key role to enhance the radiation resistance in BGO crystal. The $^{5}D_{0}$ emission of $Eu^{3+}$ ions that is not suitable for the radiation detectors due to a long decay time was found to be increased with increasing europium concentration. In the BGO crystal doped with 0.1 mole%, the density of radiation induced color centers was reduced about twenty times and the light output of $^{5}D_{0}$ was negligible by comparing to that of BGO.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.658-662
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• 2014

$Eu^{2+}/Dy^{3+}$-doped $Sr_2MgSi_2O_7$ powders were synthesized using a solid-state reaction method with flux ($NH_4Cl$). The broad photoluminescence (PL) excitation spectra of $Sr_2MgSi_2O_7:Eu^{2+}$ were assigned to the $4f^7-4f^65d$ transition of the $Eu^{2+}$ ions, showing strong intensities in the range of 375 to 425 nm. A single emission band was observed at 470 nm, which was the result of two overlapping subbands at 468 and 507 nm owing to Eu(I) and Eu(II) sites. The strongest emission intensity of $Sr_2MgSi_2O_7:Eu^{2+}$ was obtained at the Eu concentration of 3 mol%. This concentration quenching mechanism was attributable to dipole-dipole interaction. The $Ba^{2+}$ substitution for $Sr^{2+}$ caused a blue-shift of the emission band; this behavior was discussed by considering the differences in ionic size and covalence between $Ba^{2+}$ and $Sr^{2+}$. The effects of the Eu/Dy ratios on the phosphorescence of $Sr_2MgSi_2O_7:Eu^{2+}/Dy^{3+}$ were investigated by measuring the decay time; the longest afterglow was obtained for $0.01Eu^{2+}/0.03Dy^{3+}$.

• Journal of the Korean Chemical Society
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• v.38 no.9
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• pp.653-659
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• 1994

The fluorescence intensities of europium and samarium can be greatly enhanced in the presence 2-thenoyltrifluoroacetone(TTA), n-octanol and Triton X-100 in aqueous solution of pH 7. It was also found that the fluorescence intensity can be greatly increased by the addition of excess of $La^{3+}$. The excitation and emission wavelengths of europium and samarium were 345 nm, 380 nm and 617 nm, 567 nm, respectively. The fluorescence intensity was a linear function of the concentration of europium and samarium in the range TEX>$1{\times}10^{-7}∼1{\tiems}10^{-9}\;M,\;1{\tiems}10^{-5}∼1{\times}10^{-7}\;M$, respectively, and the detection limits were 1$1{\times}10^{-11}\;M$ for europium and $1{\times}10^{-8}\;M$ for samarium and the luminescence mechanism of the system is discussed.