• Title/Summary/Keyword: Luminescence mechanism

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The Co-luminescence Groups of Sm-La-pyridyl Carboxylic Acids and the Binding Characteristics between the Selected Doped Complex and Bovine Serum Albumin

  • Yang, Zhengfa;Tang, Ruiren;Tang, Chunhua
    • Bulletin of the Korean Chemical Society
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    • v.33 no.4
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    • pp.1303-1309
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    • 2012
  • A novel ligand N,N'-(2,6-pyridinedicarbonyl)bis[N-(carboxymethyl)] (L1) was designed and synthesized. Four co-luminescence groups of Sm-La-pyridyl carboxylic acids systems were researched, which are $K_4Sm_{(1-x)}-La_x(L_1)Cl_3{\cdot}y_1H_2O$, $K_4Sm_{(1-x)}La_x(L_2)Cl_3{\cdot}y_2H_2O$, $K_6Sm_{2(1-x)}La_{2x}(L_3)Cl_6{\cdot}y_3H_2O$, $K_4Sm_{(1-x)}La_x(L_4)Cl_3{\cdot}y_4H_2O$. The results indicated the addition of La(III) could sensitize the luminescence of Sm(III) obviously in a certain range, enhancing emission intensity of Sm-pyridyl carboxylic acids relative to the undoped ones. The optimal mole percentages of La(III) in the mixed ions for $L_1$, $L_2$, $L_3$, $L_4$ were confirmed to be 0.6, 0.5, 0.3, 0.6, respectively. The mechanism of the fluorescence enhancement effect was discussed in detail. Furthermore, the binding interaction of $K_4Sm_{0.4}La_{0.6}(L_4)Cl_3{\cdot}5H_2O$ with bovine serum albumin (BSA) have been investigated due to its potential biological activity. The binding site number n was equal to 1.0 and binding constant $K_a$ was about $2.5{\times}10^5\;L{\cdot}mol^{-1}$.

3D Architectures of LaVO4:Eu3+ Microcrystals via an EG-assisted Hydrothermal Method: Phase Selective Synthesis, Growth Mechanism and Luminescent Properties

  • Ding, Yi;Zhang, Bo;Ren, Qifang;Zhang, Qicai;Zha, Weiwei;Li, Xin;Chen, Shaohua;Oh, Won-Chun
    • Journal of the Korean Ceramic Society
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    • v.54 no.2
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    • pp.96-101
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    • 2017
  • In this article, pure $m-LaVO_4:Eu^{3+}$ and $t-LaVO_4:Eu^{3+}$ nanocrystals were prepared by an EG-assisted hydrothermal method with regular shapes. A series of controlled experiments showed that the pH value of a mixed solution, the volume ratio of $EG/H_2O$ and the dosage of the doped $Eu^{3+}$ all had an important effect on the sizes and shapes of the final products. Furthermore, the constitutional unit of the products changed from 0D to 2D with an increase in the EG dosage. The PL results showed that $t-LaVO_4$ doped with $Eu^{3+}$ ions had better luminescence properties than $m-LaVO_4$ due to its special structure. All of these results not only expand our understanding of the luminescence properties of lanthanide orthovanadates, but they also elucidate the principles of the crystal growth.

The Luminescence Mechanism of ${Sr_{1-x}}{Ca_x}{TiO_3}$$_3$:$Pr^{3+}$,$Ga^{3+}$ Phosphor (${Sr_{1-x}}{Ca_x}{TiO_3}$$_3$:$Pr^{3+}$,$Ga^{3+}$ 형광체의 발광메커니즘)

  • 장보윤;이용제;이현덕;변재동
    • Journal of the Korean Ceramic Society
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    • v.38 no.2
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    • pp.107-111
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    • 2001
  • Sr$_{(1-x)}$Ca$_{x}$TiO$_3$: Pr$^{3+}$ , Ga$^{3+}$ (0$\leq$x$\leq$1) 형광체의 여기 및 발광 스펙트럼과 분광 반사율을 조사하여 발광 메커니즘을 규명하고자 하였다. 발광 스펙트럼에서는 611~614nm 사이에서 peak을 가지는 하나의 적색 발광 밴드가 관찰되었으며, 조성에 따라 발광밴드의 모양이 달랐다. 이는 조성에 따른 모체의 결정 구조 변화 때문으로 생각된다. 여기 스펙트럼 끝단과 분광 반사율 스펙트럼의 흡수단은 서로 일치하였으며, 이 결과로부터 모체에 흡수된 에너지가 Pr$^{3+}$ 에 전달되어 적색광을 방출하는 것이 주된 메커니즘으로 생각된다. 한편 120$0^{\circ}C$에서 4시간동안 열처리하여 합성한 Sr$_{0.4}$Ca$_{0.6}$TiO$_3$:(0.1 mol%)Pr$^{3+}$ , (0.2 mol%)Ga$^{3+}$ 는 우수한 색순도와 휘도를 나타내었다.다.

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Bubble Behavior and Radiation for Laser-Induced Collapsing Bubble in Water (물 속에서 레이저에 의하여 생성된 기포의 거동 및 복사현상)

  • Karng, Sarng-Woo;Byun, Ki-Taek;Kwak, Ho-Young
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.1282-1287
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    • 2004
  • The bubble behavior and the radiation mechanism from a laser-induced collapsing bubble were investigated theoretically using the Keller-Miksis equation for the bubble wall motion and analytical solutions for the vapor inside bubble. The calculated time dependent bubble radius is in good agreement with observed ones. The half-width of the luminescence pulse at the collapse point, which was calculated under assumption that the light emission mechanism is black body radiation from the vapor bubble agreed well with observed value of several nanoseconds. The gas content inside the vapor bubble was too small to produce the light emission due to bremsstrahlung.

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Design of Efficient Electroluminescent lanthanide(Ⅲ) Complexes

  • Yu, Bo Ra;Kim, Hwa Jung;Park, No Gil;Kim, Yeong Sik
    • Bulletin of the Korean Chemical Society
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    • v.22 no.9
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    • pp.1005-1008
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    • 2001
  • The lanthanide complexes have been anticipated to exhibit high efficiency along with a narrow emission spectrum. Photoluminescence for the lanthanide complex is characterized by a high efficiency since both singlet and triplet excitons are involve d in the luminescence process. However, the maximum external electroluminescence quantum efficiencies have exhibited values around 1% due to triplet-triplet annihilation at high current. Here, we proposed a new energy transfer mechanism to overcome triplet-triplet annihilation by the Eu complex doped into phosphorescent materials with triplet levels that were higher than singlet levels of the Eu complex. In order to show the feasibility of the proposed energy transfer mechanism and to obtain the optimal ligands and host material, we have calculated the effect depending on ligands as a factor that controls emission intensity in lanthanide complexes. The calculation shows that triplet state as well as singlet state of anion ligand affects on absorption efficiency indirectly.

Analysis of upconversion luminescence from Yb3+, Er3+ co-doped SrMoO4 (Yb3+와 Er3+ 이온이 동시 도핑 된 SrMoO4에서 발생되는 업컨버젼 현상에 대한 분석)

  • Chung, Jun Ho;Heo, Tae Hyung;Lee, Jeong Hoon;Lee, Sang Yeop;Kang, Suk Hyun;Kim, So Yeon;Kim, Sae Am;Choi, Bong Geun;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.5
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    • pp.241-246
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    • 2012
  • $Yb^{3+}$, $Er^{3+}$ co-doped $SrMoO_4$ ($SrMoO_4$ : $Yb^{3+}/Er^{3+}$) specimens have been successfully synthesized via the complex citrate-gel method and their structural and optical properties were investigated in detail. Under 980 nm excitation, $SrMoO_4$ : $Yb^{3+}/Er^{3+}$ UC phosphors have been emitted strong green luminescence at 530 and 550 nm with weak red emission around 670 nm corresponding to the intra 4f transitions of $Er^{3+}$ ($^4F_{9/2}$, $^2H_{11/2}$, $^4S_{3/2}$) ${\rightarrow}$ $Er^{3+}$ ($^4I_{15/2}$). The optimal doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ions were verified to 2/16 mol% and a possible upconversion mechanism depending on pump power dependence is studied in detail.

Separating nanocluster Si formation and Er activation in nanocluster-Si sensitized Er luminescence

  • Kim, In-Yong;Sin, Jung-Hun;Kim, Gyeong-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.109-109
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    • 2010
  • $Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

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The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate

  • Seo, Se-Young;Kim, In-Yong;Hong, Seung-Hui;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.141-141
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    • 2010
  • The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

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Luminescence and Concentration Quenching Properties of BaZrO3:Eu3+ Red-Emitting Phosphors (BaZrO3:Eu3+ 적색 형광체의 발광과 농도 소광 특성)

  • Nguyen Thi Kim Ngan;Shinho Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.3
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    • pp.274-279
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    • 2024
  • Eu3+-doped BaZrO3 (BaZrO3:Eu3+) phosphor powders were prepared using a solid-state reaction by changing the molar concentration of Eu3+ within the range of 0.5 to 30 mol%. Irrespective of the molar concentration of Eu3+ ions, the crystal structures of all the phosphors were cubic. The excitation spectra of BaZrO3:Eu3+ phosphors consisted of an intense broad band centered at 277 nm in the range of 230~320 nm. The emission spectra were composed of a dominant orange band at 595 nm arising from the 5D07F1 magnetic dipole transition of Eu3+ and two weak emission bands centered at 574 and 615 nm, respectively. As the concentration of Eu3+ increased from 0.5 to 10 mol%, the intensities of all the emission bands gradually increased, approached maxima at 10 mol% of Eu3+ ions, and then showed a decreasing tendency with further increase in the Eu3+ ions due to the concentration quenching. The critical distance between neighboring Eu3+ ions for concentration quenching was calculated to be 11.21 Å, indicating that dipole-dipole interaction was the main mechanism of concentration quenching of BaZrO3:Eu3+ phosphors. The results suggest that the orange emission intensity can be modulated by doping the appropriate concentration of Eu3+ ions.

Photoluminescence in Carbon-doped GaAs Epilayers Grown on GaAs (311)A (GaAs (311)A 기판 위에 성장된 탄소 도핑된 GaAs 에피층의 광여기 발광)

  • 조신호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.208-213
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    • 2002
  • We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.