Journal of Satellite, Information and Communications
/
v.12
no.3
/
pp.80-85
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2017
In this paper, a mircrowave breakdown of X-band circular waveguide cavity filter, which occurred during ground test, was introduced, and electro-magnetic field simulation results to identify a root cause, and the analysis of possibility of its occurrence on orbit operation were presented. Filter modeling for simulation was conducted with a commercial tool (FEST3D), and electric fields inside the filter were monitored at the input of 1 W continuous wave. In our observation, strong electric field intensities were monitored on the tuning screws especially at the input of band-edge frequencies. The threshold power levels for the breakdown were also estimated and compared with the input power levels actually injected to the filter. From this estimation, we could figure out that the power exceeding the breakdown threshold was injected to the filter so that strong electric fields were generated and temperature increased high, and this became a root cause of the electrical short. Our further analysis showed that this kind of microwave breakdown is not likely to occur on orbit operation, and multipactor is expected not to occur at the input of band-edge frequencies. As a measure to prevent the microwave breakdown, we suggested to avoid the injection of band-edge frequencies and inject lower power levels to the filter.
This study was performed to investigate PSL and TL characteristics for the detection of different ratios of gamma-irradiated turmeric. It was possible to determine PSL and TL of 1- and 10-kGy irradiated turmeric. The TL ratios ($TL_1/TL_2$) of non-irradiated samples were lower than 0.001, while those of irradiated samples were higher than 0.355. In the PSL results, blended samples containing irradiated ingredients showed intermediate values for a 1% blending rate. Furthermore, TL analysis of blended samples seems to offer a promising method for irradiation identification by TL glow curve form and temperature range. The 1- and 10-kGy irradiated samples were able to be detected above a 4% blending rate. However, the TL ratio appeared as a threshold value below 0.1 for irradiated samples. Overall, TL analysis identified 4% blended samples containing gamma-irradiated turmeric.
Kim, Dong Yong;Park, Yong Dae;Jin, Chang Hyun;Choi, Dae Seong;Yook, Hong-Sun;Jeong, Il Yun
Journal of Radiation Industry
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v.4
no.3
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pp.221-226
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2010
Physical detection methods, photostimulated luminescence (PSL), thermoluminescence (TL) and electron spin resonance (ESR) were applied to detect electron beam-irradiated agricultural products, such as red pepper, black pepper, raisin, walnut, beef seasoning and pistachio. The absorbed irradiation doses for representative samples were controled at 0, 1, 3, 5 and 10 kGy. PSL values for non-irradiated samples were <700 counts/60s (lower threshold, $T_1$) except beef seasoning, whereas those of irradiated samples were more than 5,000 photon counts, upper threshold ($T_2$) in black pepper, raisin, and beef seasoning and intermediates values of $T_1-T_2$ in red pepper, walnut, and pistachio. Minerals seperated from the samples for TL measurement showed that non-irradiated samples except pistachio (TL ratio, 0.12) were characterized by no glow curves situated at temperature range of $50{\sim}400^{\circ}C$ with TL ratio (0.01~0.08), while irradiated samples except pistachio at only 1 kGy (TL ratio, 0.08) indicated glow curve at about $150{\sim}250^{\circ}C$ with TL ratio (0.28~3.10). ESR measurements of irradiated samples showed any specific signals to irradiation. The samples of both red pepper and pistachio were produced specific signals derived from cellulose radicals as well as single line signals for black pepper and walnut, and multiple signals derived from crystalline sugar radicals for raisin and beef seasoning. In conclusion, The ESR methods can apply for detection of pistachio exposed to electron beam but PSL and TL are not suitable methods. Furthermore, TL and ESR suggeted that both techniques were more useful detection method than PSL to confirm whether red pepper, walnut and beef seasoning samples have been exposed to electron beam.
To establish the systematic biological control system for various insect pests in strawberry under plastic houses, we were investigated the biological traits of lesser strawberry aphid, Chaetosiphon minus (Forbes), as a target pest. The lesser strawberry aphid is adapted to low temperatures while examining the availability of and selecting useful natural enemies. The development, survivorship and reproduction of lesser strawberry aphid were evaluated at four constant temperatures (10, 15, 20, and 25℃). The developmental periods of the nymphal stages ranged from 41.7 d at 10℃ to 9.8 d at 25℃. The developmental threshold temperature and degree day of nymphal stages are 5.5℃ and 185 DD. The reproduction rate (R0) was higher at 20℃ (30.16) than at 25℃ (22.38). The 50 % survival rate and maximum longevity of adult females were 31 d and 59 d at 20℃, and 25 d and 36 d at 25℃, respectively. The average progeny per female was 35 at 20℃, and 26 at 25℃. We confirmed that compared to other strawberry aphids under plastic houses, the lesser strawberry aphid is more adapted to lower temperatures. It is, therefore, necessary to commercialize natural enemies such as syrphid flies with high activity at low temperatures.
Journal of the Korean Institute of Landscape Architecture
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v.44
no.6
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pp.84-97
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2016
This study was to investigate the user's thermal environments of the children's parks according to pavements and sunscreen types during periods of heat waves. The measurements were conducted at the sand pits, rubber chip pavement, shelters, and green shade ground of the two children's parks located in Jinju, Korea(Chilam: $N\;35^{\circ}11^{\prime}1.4{^{\prime}^{\prim}}$, $E\;128^{\circ}5^{\prime}31.7{^{\prime}^{\prime}}$, elevation 38m, Gaho: $N\;35^{\circ}09^{\prime}56.8{^{\prime}^{\prime}}$, $E\;128^{\circ}6^{\prime}41.1{^{\prime}^{\prime}}$, elevation 24m) over three days during 11-13, August, 2016. The highest ambient air temperatures at the Jinju Meteorological Office during the three measurement days were $35.9{\sim}36.8^{\circ}C$, which corresponded with the extremely hot weather. A series of experiments measured air temperature, relative humidity, wind velocity, black globe temperature, and long-wave and short-wave radiation of the six directions 0.6 m above ground level. The wet bulb globe temperature(WBGT) and the universal thermal climatic index(UTCI) were used to evaluate thermal stress. Surface temperature images of the play equipment were also taken using infrared thermography. Surface temperatures of the play equipment and grounds were used to evaluate burn risk through contact with playground materials. The results showed the following. The maximum air temperatures averaged over 1-hour period for three days were $36.6{\sim}39.4^{\circ}C$. The sun shades reduced those temperatures by up to $2.8^{\circ}C$(green shade) and $1.0^{\circ}C/2.3^{\circ}C$(shelters). The minimum relative humidity values averaged over 1-hour period for three days were 44~50%. The sun shades increased those humidity values by up to 6%(green shade) and 4%/6%(shelters). The risk of heat related illness at the measurement sites of the children's parks were extreme and high in the daytime hours. The maximum WBGT values averaged over a 30-minute period for three days were $31.2{\sim}33.6^{\circ}C$. The sun shades reduced those WBGT values by up to $2.4^{\circ}C$(green shade) and $0.5^{\circ}C/2.1^{\circ}C$(shelters) compared to sandpits, but would not block the risk of heat related illness in the daytime hours. The category of heat stress at the measurement sites of the children's parks were extreme and very strong in the daytime hours. The maximum UTCI values averaged over a 30-minute period for three days were $39.9{\sim}48.1^{\circ}C$. The sun shades reduced those UTCI values by up to $7.8^{\circ}C$(green shade) and $4.1^{\circ}C/8.2^{\circ}C$(shelters) compared to sandpits, but could not lower heat stress category from extreme and very strong to strong and moderate in the daytime hours. According to the burn threshold criteria when skin was in contact with playground materials, the maximum surface temperature of the stainless steels($70.8^{\circ}C$) surpassed three seconds $60^{\circ}C$ threshold for uncoated steel, that of the rubber chip($76.5^{\circ}C$) surpassed five seconds $74^{\circ}C$ threshold for the plastic, that of the plastic slide($68.5^{\circ}C$) and seats($71.0^{\circ}C$) surpassed the one min $60^{\circ}C$ threshold for plastic, respectively. The surface temperatures of shaded play equipment were lower approximately $20^{\circ}C$ than those of play equipment exposed to the sun. Therefore, sun shades can block the risk of burns in daytime hours. Because of the extreme and high risk of heat related illness and extreme and high heat stress at the children's parks during periods of heat waves, parents and administrators must protect children from the use of playgrounds. The risk of burn when contact with play equipments and grounds at the children's parks during periods of heat waves, was very high. The sun shades are essential to block the risk of burn from play equipments and grounds at the children's parks during heat waves.
To examine the relationship between environmental factors influencing the habitat of Aconitum austrokoreense Koidz., this study employed the MexEnt model to evaluate 21 environmental factors. Fourteen environmental factors having an AUC of at least 0.6 were found to be the age of stand, growing stock, altitude, topography, topographic wetness index, solar radiation, soil texture, mean temperature in January, mean temperature in April, mean annual temperature, mean rainfall in January, mean rainfall in August, and mean annual rainfall. Based on the response curves of the 14 descriptive factors, Aconitum austrokoreense Koidz. on the Baekun Mountain were deemed more suitable for sites at an altitude of 600 m or lower, and habitats were not significantly affected by the inclination angle. The preferred conditions were high stand density, sites close to valleys, and distribution in the northwestern direction. Under the five-age class system, the species were more likely to be observed for lower classes. The preferred solar radiation in this study was 1.2 MJ/m2. The species were less likely to be observed when the topographic wetness index fell below the reference value of 4.5, and were more likely observed above 7.5 (reference of threshold). Soil analysis showed that Aconitum austrokoreense Koidz. was more likely to thrive in sandy loam than clay. Suitable conditions were a mean January temperature of - 4.4℃ to -2.5℃, mean April temperature of 8.8℃-10.0℃, and mean annual temperature of 9.6℃-11.0℃. Aconitum austrokoreense Koidz. was first observed in sites with a mean annual rainfall of 1,670- 1,720 mm, and a mean August rainfall of at least 350 mm. Therefore, sites with increasing rainfall of up to 390 mm were preferred. The area of potential habitats having distributive significance of 75% or higher was 202 ha, or 1.8% of the area covered in this study.
Journal of the Korean Society of Fisheries and Ocean Technology
/
v.53
no.1
/
pp.49-59
/
2017
The objective of this study was to investigate the growth rate and the optimal stocking density of sea cucumbers. Grow-out was studied in situ by conducting a follow-up survey using visible implant elastomer (VIE) tags. The rearing systems were made of polypropylene pipe for the frames and netting. The experiment ran for 70 days near Yeosu, Korea in the water depth of about 7 m. A total of 576 sea cucumbers which have three groups of body sizes (small: 5.15, medium: 12.34 and large: 23.26 g) were used. The five groups of stocking densities (150, 300, 450, 600 and $850g/m^2$) in rearing system for sea cucumber were considered. Sea cucumbers were fed a mixed diet (mud, mineral, fish meal, etc.). The feed was supplied to 10% of their body wet weight once every 7 days. The survival rate (73%) of sea cucumber in $850g/m^2$ was lower than those of other density groups ($150g/m^2$: 89%, $300g/m^2$: 84%, $450g/m^2$: 78% and $600g/m^2$: 86%). The survival rate of medium size group was higher than those of small and large groups regardless of the density (P<0.05). Most of density groups have no significant difference except for $850g/m^2$ (P>0.05). The growth rate of small size group ($0.63%day^{-1}$) was higher than those of medium ($0.38%day^{-1}$) and large ($0.34%day^{-1}$) group regardless of the density (P<0.05). The threshold water temperature was $11.0^{\circ}C$ for sea cucumber growth in winter season.
Journal of the Microelectronics and Packaging Society
/
v.16
no.4
/
pp.17-22
/
2009
Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.
Journal of the Korean Institute of Telematics and Electronics
/
v.21
no.6
/
pp.34-41
/
1984
MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.
Proceedings of the Korean Vacuum Society Conference
/
2014.02a
/
pp.281-281
/
2014
The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.
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