• 동력기계공학회지
• /
• 제4권4호
• /
• pp.99-107
• /
• 2000

In this study several P type and N type ceramic semiconductors were prepared by atomic valence control and their electric resistivities were investigated with various concentrations of additive impurities. N-P junctions were made by thin film printing method and their varistor-like characteristics were investigated and their availability was discussed. The results are followings, 1) Some N type semiconductors with a proper concentration of additive impurity have minimum resistivities. 2) The N-P junction samples with ZnO as a constituent material of N type semiconductor have linearity in voltage-current characteristics, but the other N-P junction samples have the non-linearity, 3) Some N-P junction samples showed the good varistor-like characteristics.

• 한국세라믹학회지
• /
• 제40권11호
• /
• pp.1067-1072
• /
• 2003

Zn-Pr-Co-Cr-Dy 산화물계로 구성된 바리스터 세라믹스의 전기적 안정성을 몇 가지 DC 가속열화 스트레스 조건하에서 0.0∼2.0 mol% Dy$_2$O$_3$ 첨가량의 변화에 따라 조사하였다. 바리스터 세라믹스의 밀도는 Dy$_2$O$_3$ 첨가량이 0.5 mol%까지 증가하였으며, 보다 많이 첨가하면 감소하는 것으로 나타났다. 밀도는 전도경로와 밀접한 관계로 인해서 안정성에 큰 영향을 미치는 것으로 나타났다. Dy$_2$O$_3$ 첨가는 바리스터 세라믹스의 비직선 지수를 45 이상, 누설전류를 대략 1.0 $\mu$A 이하로 비직선성을 크게 개선시켰다. DC 스트레스 조건 0.95 V$_{1mA}$/15$0^{\circ}C$/24 h에서 안정성을 조사한 결과, 0.5 mol% 첨가시 상대적으로 가장 높은 안정성을 나타내었다. 전압-전류특성에 있어서 바리스터 전압, 비직선 지수, 누설전류의 변화율은 각각 -0.9%, -14.4%, +483.3%이었으며, 유전특성에 있어서 비유전율 및 손실계수의 변화는 각각 +7.1%, +315.4%이었다. 그 외의 바리스터 세라믹스는 낮은 밀도 때문에 열폭주 현상을 나타내는 매우 불안정한 특성을 나타내었다.다.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2000년도 추계종합학술대회
• /
• pp.581-584
• /
• 2000

This paper describes the effect of lightning impulse current on ZnO varistors(390 V, 6.5 kA) used in low-voltage AC mains as a protective device against transient overvoltages. A lightning impulse current standardized in IEC 61000-4-5 is applied to the varistors, and the energy applied to the varistor at each time is about 12 J. In the experiment, various Parameters such as leakage current, reference voltage are measured with the number of applied impulse current. Also, micro-structure changes of the varistors after applying the lightning impulse current of 200 times are compared. The electrical characteristics of the varistors are degraded by overtime impulse current, showing increase in leakage current and decrease in reference voltage.

• 한국전기전자재료학회논문지
• /
• 제16권12호
• /
• pp.1071-1076
• /
• 2003

The nonlinear properties and their stability of ZPCCD- based varistors, which are composed of ZnO P $r_{6}$ $O_{ll}$ - CoO-C $r_2$ $O_3$-D $y_2$ $O_3$-based ceramics, were investigated in the D $y_2$ $O_3$ content range of 0.0∼2.0 mol%. The incorporation of D $y_2$ $O_3$ greatly affected the nonlinear properties and the best nonlinearity was obtained from 0.5 mol% D $y_2$ $O_3$ with nonlinear exponent of 66.6 and leakage current of 1.2 $\mu$A. Further addition of D $y_2$ $O_3$ deteriorated the nonlinear properties. In stability against DC accelerated aging stress state: 0.95 $V_{1mA}$/15$0^{\circ}C$/24 h, the 0.5 mol％ D $y_2$ $O_3$-doped varistor exhibited the highest stability, in which the variation rate of varistor voltage and nonlinear exponent are -1.9% and 10.5%, respectively. The remainder varistors resulted in thermal runaway due to low density of ceramics.s.s.

• 한국세라믹학회지
• /
• 제42권7호
• /
• pp.490-496
• /
• 2005

The electrical properties and stability of the varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_{2}$O$_{3}$-Dy$_{2}$O$_{3}$ system were investigated with sintering time in the range of 1$\~$3 h at 1350$^{\circ}C$ . As the sintering time was increased, the varistor voltage and leakage current increased, but the nonlinear exponent decreased. The varistors sintered for 1 h exhibited excellent nonlinearity, with a nonlinear exponent of 55.3 and a leakage current of 0.1 $\mu$A, whereas presented relatively low stability. The varistors sintered for 2 h exhibited not only high nonlinear exponent of 46.3, low leakage current of 0.3 $\mu$A, low dielectric dissipation factor of 0.0431, but also the highest stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, dielectric constant, and dielectric dissipation factor were -3.0$\%$, -4.1$\%$, +3056.2$\%$, +5.1$\%$, and -12.5$\%$, respectively, after DC accelerated aging stress state of 0.95 V$_{1ma}$/150$^{\circ}C$/24 h. On the whole, the nonlinearity and stability of these varistors are greatly affected by the sintering time.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
• /
• pp.52-56
• /
• 2001

The Breakdown electric field of ZnO semiconductor devices in voltage-current characteristics was increased by increasing of additive materials. The specimen that has not additive materials was not formed spinel structure. The critical voltage that has not spinel structure was 235[V]. When the additive materials has 0.5 and 2[mol%], the Breakdown electric field was 840 and 758[V] in each additive materials. The Breakdown electric field of varistors as a factor of voltage and current was increased by addition of oxide antimony. The varistors that has oxide antimony was linearly increased in low electric field.

• E2M - 전기 전자와 첨단 소재
• /
• 제6권1호
• /
• pp.69-79
• /
• 1993

ZnO 바리스터는 전기전자 장치에 비이상적인 써어지 혹은 잡음신호가 침입하는 것을 막기위해서 폭넓게 사용되고 잇다. 많은 연구자들은 저전압 바리스터를 제조하기 위해서 요러가지 방법을 제시하였다. 그렇지만 그러한 방법들은 6V이하의 동작 전압을 갖는 바리스터를 제조하기는 어렵다. 본 연구에서는 새로운 3-성분 종입자법으로 제조한 바리스터의 전도특성을 보고하고자 한다. 온도범위 20-150.deg.C 및 전류 범위 $10^{-8}$~$10^{-1}$A/$cm^{2}$에서 관찰된 바리스터의 전도특성은 측정전류가 증가함에 따라서 다른 기구를 갖는 3개의 영역으로 구분되었다. 측정전류가 $10^{-3}$ A/$cm^{2}$이하인 경우에 오옴전도 혹은 누설전류 영역으로 해석 할 수 있었다. 측정 전류가 $10^{-3}$ A/$cm^{2}$ 부근에서는 이중 쇼트키 장벽에 의한 전도로 해석할 수 있었으며 또한 $10^{-3}$ A/$cm^{2}$ 이상의 전류 영역에서는 턴넬 전도 전류로 해석 할 수 있었다. 이상의 결과로 부터 3-성분 종입자법으로 저전압 바리스터를 제조하는 방법은 지금까지 보고된 어느 다른 방법보다도 우수하며 그 전도기구를 제시하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.271-274
• /
• 2000

Gas sensor materials capable of detecting hydrogen gases (H$_2$) or nitrogen oxides (NO$\_$x/, primarily NO and NO$_2$) with high sensitivity have attracted much interest in conjunction with the growing concern to the protection of global environments. Beside conventional sensor materials, such as semiconductors., conducting polymers and solid electrolytes, the potential of sensor materials with a new method for detecting hydrogen gases or nitrogen oxides gas has also been tested. The breakdown voltage of porous varistors shifted to a low electric field upon exposure to H$_2$ gas, whereas it shifted to a reverse direction in an atmosphere containing oxidizing gases such as O$_3$ and NO$_2$ in the temperature range of 300 to 600$^{\circ}C$. Furthermore, it was found that the magnitude of the breakdown voltage shift, i. e. the magnitude of sensitivity, was well correlated with gas concentration, and that the H$_2$ sensitivity was improved by controlling the composition of the Bi$_2$O$_3$ rich grain boundary phase. However, NO$\_$x/ sensing properties of porous varistors have not been studies in detail. The objective of the present study is to investigate the effect of the composition of the Bi$_2$O$_3$ rich grain boundary phase and other additive such as A1$_2$O$_3$ on the hydrogen gases (H$_2$) sensing properties of porous ZnO based varistors.

• 한국재료학회지
• /
• 제29권10호
• /
• pp.586-591
• /
• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• 한국전기전자재료학회논문지
• /
• 제14권5호
• /
• pp.362-369
• /
• 2001

The electrical properties of varistors consisting of Zn-Pr-Co-Cr-Er oxides were investigated in the Er$_2$O$_3$content range of 0.0 to 2.0 mol%. the varistors without Er$_2$O$_3$ exhibited a relatively low nonlinearity, which was 14.24 in the nonlinear exponent and 21.47 $\mu$A in the leakage current. However, the varistors with Er$_2$O$_3$ sintered at 1335$^{\circ}C$ for 1h exhibited very high nonlinear exponent of 70, in particular, reaching a maximum value of 78.05 in 2.0 mol% Er$_2$O$_3$, and those sintered at 1335$^{\circ}C$ for 2h exhibited the nonlinear exponent close to 50, in particular, reaching a maximum value of52.76 in 0.5 mol% Er$_2$O$_3$. The others except for 0.5 mol% Er$_2$O$_3$-added varistors exhibited very high instability resulting in a thermal runaway within a short time, even a weak DC stress. Increasing soaking time decreased the nonlinearity, but increased the stability. The varistors containing 0.5mol% Er$_2$O$_3$ sintered for 2h exhibited excellent stability, in which the variation rate of the varistor voltage and nonlinear exponent was -1.70% and -7.15%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/12h).TEX>/12h).