• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.308-311
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• 2015

V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E_{1 mA/cm²} = 27 (initial 39) after application of a pulse current of 100 A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.248-252
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• 1995

In this paper, the samples are made by the new three-composition seed grain method, in order to obtain the low voltage varistor distributed randomly large seed grain in its bulk. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.39-45
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• 2003

The varistor properties of ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with Sm$_2$O$_3$were investigated in the addition range of 0.0~2.0 mol% Sm$_2$O$_3$at sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. As Sm$_2$O$_3$ content is increased, the breakdown voltage was increased in the range of 348.9~521.8 V/mm for ceramics sintered at 130$0^{\circ}C$ and 8.5~381.3 V/mm for ceramics sintered at 135$0^{\circ}C$. On the whole, the increase of sintering temperature led to the low nonlinearity regardless of Sm$_2$O$_3$content. ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with 1.0 mol% at each sintering temperature exhibited the most superior varistor properties, with the nonlinear exponent of 42.1 at 130$0^{\circ}C$, 36.8 at 135$0^{\circ}C$ and the leakage current of 9.2 $\mu$A at 130$0^{\circ}C$, 11.7 $\mu$A at 135$0^{\circ}C$.EX>.EX>.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1631-1633
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• 2004

The surge current characteristics of ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3-Dy_2O_3$-based varistors were investigated with various $Dy_2O_3$ contents. The sintered density decreased in the range of $5.2{\sim}4.6g/cm^3$ with increasing $Dy_2O_3$ content. The incorporation of $Dy_2O_3$ markedly enhanced the nonlinear properties of varistors above 10 times in nonlinear exponent, compared with the varistor without $Dy_2O_3$. The varistor ceramics doped with 0.5 mol% $Dy_2O_3$ exhibited the highest electrical stability. However, the remainder varistors resulted in thermal runaway due to low density of varistor ceramics. The clamping voltage ratio exhibited a minimum value of 2.03 in 1.0 mol% $Dy_2O_3$ at surge current of 100 A(8/20 ${\mu}s$).

• 한국정보통신학회논문지
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• 제4권4호
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• pp.793-801
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• 2000

본 논문에서는 저전압 교류회로에서 과도이상전압에 대한 보호소자로 사용되는 산화아연형 바리스터의 뇌충격전류에 대한 영향에 대하여 기술하였다. 산화아연형 바리스터는 뇌충격전류에 의해 열화가 진행되며, 열화된 바리스터는 정상 운전전압에서도 열폭주에 도달하여 파괴되므로, 바리스터의 전기적 특성변화를 평가 하는 것은 대단히 중요하다. 바리스터를 가속열화시키기 위하여 국제규격 IEC 61000-4-5에 규정된 뇌충격전류를 적용하였으며, 1회의방전에 바리스터에는 약 12(J)의 에너지가 인가된다. 뇌충격전류의 인가에 따른 바리스터의 누설전류, 정격전압 등을 측정하였으며, 또한 바리스터에 뇌충격전류를 200회 인가 후 초기상태의 미세구조와 비교하였다. 실험결과로부터 바리스터는 뇌충격전류의 인가에 따라 누설전류는 증가하고 정격전압은 감소하는 경향을 나타내면서 전기적 성능이 저하됨을 확인하였다.

• 조명전기설비학회논문지
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• 제21권1호
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• pp.118-124
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• 2007

본 논문에서는 임펄스전류의 크기와 인가횟수가 ZnO바리스터의 수명에 미치는 영향에 관한 것으로 뇌임펄스전류가 ZnO바리스터의 성능에 미치는 영향을 분석하기 위하여 $8/20[{\mu}s]$임펄스전류가 인가되기 전후 ZnO바리스터의 상용주파수 교류전압에 대한 저항성 누설전류와 손실전력을 측정하였다. 그 결과 $8/20[{\mu}s]$임펄스전류의 인가횟수가 증가함에 파라 ZnO바리스터에 흐르는 저항성 누설전류는 증가하고 통과시간은 길어졌다. ZnO바리스터의 수명은 뇌임펄스전류의 크기와 인가횟수에 대해서 평가하는 것이 바람직하다.

• 한국세라믹학회지
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• 제41권8호
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• pp.605-609
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• 2004

다양한 금속산화물(NiO, MgO, Cr$_2$O$_3$) 첨가에 따른 ZnO 바리스터의 미세구조, 전기적, 유전적 특성을 조사하였다. 평균 결정립 크기는 NiO 첨가로 증가한 반면 Cr$_2$O$_3$ 첨가로 감소하였다 이로 인해 바리스터 전압은Cr$_2$O$_3$ 첨가시 더 높게 나타났다. 바리스터 가운데서 Cr$_2$O$_3$가 첨가된 바리스터가 비직선 지수가 40.5, 누설전류가 2.7 $\mu$A로 가장 우수한 비직선성을 나타내었으며, 유전손실도 0.0589로 비교적 낮게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.190-195
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• 2000

The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.

• 한국세라믹학회지
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• 제41권6호
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• pp.464-470
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• 2004

ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$계 세라믹스로 구성된 ZPCCY계 바리스터의 소결시간별 DC 가속열화 스트레스에 대한 전기적 안정성을 조사하였다. 소결시간은 전기적 특성 및 안정성에 크게 영향을 미치는 것으로 나타났다. 소결시간이 증가함에 따라 비직선 지수는 51.2∼23.8의 범위로 감소하였으며, 누설전류는 1.3∼5.6 $\mu$A의 범위로 증가하였다. 1시간 소결된 바리스터는 비직선성은 우수하나 밀도가 낮은 관계로 안정성이 상대적으로 낮았으며, 3시간 소결된 바리스터는 안정성은 양호하나 비직선성이 다소 낮은 것으로 나타났다 2시간 소결된 바리스터는 비직선 지수가 38.6, 누설전류가 3.6 $\mu$A로 양호 하고, DC스트레스_0.95 $V_{1㎃}$15$0^{\circ}C$/12h에서 바리스터 전압, 비직선 지수, 누설전류, 손실계수 변화율이 각각 -0.8%, -1.8%, +74.4%, +0.9%를 나타냄으로서 안정성이 우수한 것으로 나타났다.다.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.640-646
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• 2001

The electrical stability for DC stress of Pr$_{6}$O$_{11}$-based ZnO varistos consisting of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$-based ceramics were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. A the sintering temperature is raised, the nonlinear exponent of varistors was decreased, whereas the stability was markedly improved. The density of ceramics was found to greatly affect the electrical stability for DC stress. The varistors sintered at 13$25^{\circ}C$ were completely degraded because of thermal runaway attributing to low density. The varistors sintered at 1335$^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 70.53 and a leakage current of 1.92$\mu$A, whereas they did not exhibit relatively high stability. On the contrary, the varistors sintered at >134$0^{\circ}C$ exhibited not only a high nonlinearity marking the nonlinear exponent above 50 and the leakage current below 3$\mu$A, but also a high stability marking the variation rate of the varistor voltage below 2%, even under DC stress such as (0.80V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85V$_{1mA}$/115$^{\circ}C$/12h)+(0.90V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95V$_{1mA}$/15$0^{\circ}C$/12h). In particular, ti was found that the varistors sintered at 134$0^{\circ}C$ were more nonlinear and more stable, compared with that of 1345$^{\circ}C$.EX>.}C$.EX>.