• Journal of the Korean Society of Combustion
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• v.10 no.4
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• pp.24-32
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• 2005

Various types of plasma source applied in $CH_4$ decomposition process are compared. DBD by pulse and AC power, spark by pulse and AC power, rotating arc and hollow cathode plasma are chosen to be compared. The results show that $CH_4$ conversion per given unit power is relatively high in hollow cathode plasma and rotating arc that induces rather high temperature condition and that is why both thermal dehydration and plasma induced decomposition contribute for the overall process. In case of DBD wherein high temperature electron and low temperature gas molecule coexist, the process shows low conversion rate, for in rather low temperature condition the contribution of thermal dehydration is lowered. Selectivity of $C_2H_6$ and $C_2H_2$ is shown to be a good parameter of the relative contribution of plasma chemistry in the overall process. From the results we concluded that required condition of plasma source for a cost effective and high yield $CH_4$ decomposition is to have characteristics of both thermal plasma and non thermal plasma in which temperature is high above a certain threshold state for thermal dehydration and electron induced collision is maximized in the same breath.

• Journal of Information Display
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• v.4 no.3
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• pp.17-21
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• 2003

A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.338-343
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• 2015

To prevent an interfacial reaction between the anode and the electrolyte layer during the conventional high-temperature co-firing process, an anode-supported type cell with a thin-film electrolyte was fabricated by low-temperature ceramic thick film coating process. Ni-GDC cermet composite was used as the anode material and YSZ was used as the electrolyte material. Open circuit voltage and maximum power density were found to strongly depend on the surface uniformity of the anode functional layer. By optimizing the microstructure of the anode functional layer, the open circuit voltage and maximum powder density of the cell increased to 1.11 V and $1.35W/cm^2$, respectively, at $750^{\circ}C$. When a GDC barrier layer was applied between the YSZ electrolyte and the LSCF cathode, the cell showed good stability, with almost no degradation up to 100 h. Anode-supported type SOFCs with high performance and good stability were fabricated using a coating process.

• Journal of Environmental Science International
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• v.22 no.1
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• pp.1-6
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• 2013

A fixed biofilm reactor system composed of anaerobic, anoxic(1), anoxic(2), aerobic(1) and aerobic(2) reactor was packed with synthetic activated ceramic (SAC) media and adopted to reduce the inhibition effect of low temperature on nitrification activities. The changes of nitrification activity at different wastewater temperature were investigated through the evaluation of temperature coefficient, volatile attached solid (VAS), specific nitrification rate and alkalinity consumption. Operating temperature was varied from 20 to $5^{\circ}C$. In this biofilm system, the specific nitrification rates of $15^{\circ}C$, $10^{\circ}C$ and $5^{\circ}C$ were 0.972, 0.859 and 0.613 when the specific nitrification rate of $20^{\circ}C$ was assumed to 1.00. Moreover the nitrification activity was also observed at $5^{\circ}C$ which is lower temperature than the critical temperature condition for the microorganism of activated sludge system. The specific amount of volatile attached solid (VAS) on media was maintained the range of 13.6-12.5 mg VAS/g media at $20{\sim}10^{\circ}C$. As the temperature was downed to $5^{\circ}C$, VAS was rapidly decreased to 10.9 mg VAS/g media and effluent suspended solids was increased from 3.2 mg/L to 12.0 mg/L due to the detachment of microorganism from SAC media. And alkalinity consumption was lower than theoretical value with 5.23 mg as $CaCO_3$/mg ${NH_4}^+$-N removal at $20^{\circ}C$. Temperature coefficient (${\Theta}$) of nitrification rate ($20^{\circ}C{\sim}5^{\circ}C$) was 1.033. Therefore, this fixed film nitrogen removal process showed superior stability for low temperature condition than conventional suspended growth process.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.1
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• pp.94-100
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• 2019

This study was conducted on a high-temperature/high-pressure washer in which low-pressure cold water in a boiler is heated to a temperature range of $70{\sim}80^{\circ}C$ by supplying diesel combustion heat. The high-temperature water is sent to a compressor to increase its pressure to 200 bar, thereby making high-temperature/high-pressure water, which is sprayed through a spray nozzle. In the results of this study, the spray temperature of the high-pressure washing was shown to be the highest when the ratio between the actual amount of combustible air and the theoretical amount of air was 1:1 and the energy consumption rate of the low-pressure boiler type high-pressure washer was shown to be much lower than that of the high-pressure boiler type high-pressure washer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1025-1027
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• 2009

Novel low temperature deposition process for nano-crystalline Si thin film is developed with the hyper-thermal neutral beam (HNB) technology. By our HNB assisted CVD system, the reactive particles can induce crystalline phase in Si thin films and effectively combine with heating effect on substrate. At low deposition temperature under $80^{\circ}C$, the HNB with proper incident energy controlled by the reflector bias can effectively enhance the nano-crystalline formation in Si thin film without any additional process. The electrical properties of Si thin films can be varied from a-Si to nc-Si according to change of HNB energy and substrate temperature. Characterization of these thin films with conductivity reveal that crystalline of Si thin film can increase by assist of HNB with appropriate energy during low temperature deposition. And low temperature prcoessed nc-Si TFT performance has on-off ratio as order 5.

• Design & Manufacturing
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• v.13 no.1
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• pp.5-12
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• 2019

In this paper, we studied the micro tool deflection, micro cutting with low temperature, and deformation of micro ribs caused by cutting forces. First, we performed an integrated machining error compensation method based on captured images of tool deflection shapes in micro cutting process. In micro cutting process, micro tool deflection generates very serious problems in contrast to macro tool deflection. To get the real images of micro tool deflection, it is possible to estimate tool deflection in cutting conditions modeled and to compensate for machining errors using an iterative algorithm correcting tool path. Second, in macro cutting fields, the cryogenic cutting process has been applied to cut the refractory metal but, the serious problem may be generated in micro cutting fields by the cryogenic environment. However, if the proper low temperature is applied to micro cutting area, the cooling effect of cutting heat is expected. Such effect can make the reduction of tool wear and burr formation. For verifying this passibility, the micro cutting experiment at low temperature was performed and SEM images were analyzed. Third, the micro pattern was deformed by the cutting forces and the shape error occurred in the sidewall multi-step cutting process were minimized. As the results, the relationship between the cutting conditions and the deformation of micro-structure during micro cutting process was investigated.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.216-221
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• 2016

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature ($300^{\circ}C$) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.

• Food Science of Animal Resources
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• v.32 no.3
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• pp.293-300
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• 2012

This study investigated the effects of a low-voltage ohmic heating process (2.5 and 3.8 V/cm) on the thawing characteristics and NaCl diffusion of pork. The thawing rate of pork was dependent on the applied voltages and brine salinities, and few differences were obtained in pork quality parameters (color, water-holding capacity, and shear force) regarding the different treatments. The NaCl concentration of pork after ohmic thawing was higher than that following brine-immersion thawing, however, the NaCl diffusion did not differ from when fresh meat was immersed in brine. For application of the ohmic process in fresh pork, various ohmic pulses were generated in order to prevent the meat from overheating, and the results indicated that the ohmic process was a better way to enhance NaCl diffusion compared with immersing pork at high temperature. Although the mechanisms involved in NaCl diffusion at low-voltage electric field strength were unclear, the present study demonstrated that the ohmic process has a potential benefit in the application of meat processing.