• 센서학회지
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• 제23권4호
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• pp.266-271
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• 2014

Chemical sensors are used in various industrial facilities such high-risk and prevent the leakage of substances, important in life and environmental protection and the safe use of industry, used for management. In particular, high-temperature environments such as power generation equipment of the rotating part due to leakage generated by the various oil, power plants Shut Down, fire, work environment (exposure to various chemical solution and gas leak) and various water, air and soil pollution causes. Thus, over the long term through various channels such as crops and groundwater contamination caused by the slow, serious adverse effect on the ecosystem. In this paper, synthetic lube oil and high pressure hydraulic fluid leakage and immediately detect a new Printed Electronic implementation of technology-based film-type sensors, and its performance test. Thus, industrial accidents and environmental pollution and for early detection of problems, large accidents can be prevented. Experimental results of the synthetic lube oil and high pressure hydraulic fluid solution after the contact time depending on the experiment and the oil solution of the sensor material of the conductive porous PE resistance value by a chemical reaction could be confirmed that rapid increase. Also implemented in the film-type oil sensor electrical resistance change over time of the reaction rate and the synthetic lube oil is about 2 minutes or less, the high pressure hydraulic fluid is less than about 1 minute was. Therefore, more high-pressure hydraulic fluid such as a low volatility synthetic lube oils are the resistance change and the reaction rate was confirmed to be the slowest.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.961-965
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• 2010

In this study, we investigated the optical, electrical, and structural properties of the IGZO($In_2O_3:Ga_2O_3:ZnO$=1:9:90 wt.%) thin films prepared by RF-magnetron sputtering system under various substrate temperatures. All of the IGZO thin films shows an average transmittance of over the 80% in visible range. Most of all, deposited IGZO thin film at $100^{\circ}C$ substrate temperature have ZnO (002) of main growth peak and 17.02 nm of increased grains. And also IGZO thin film have low resistivity($1.35{\times}10^{-3}\;\Omega{\cdot}cm$), high carrier concentration($6.62{\times}10^{20} cm^{-3}$) and mobility($80.1 cm^2$/Vsec). IGZO thin film have 2.08 mV at surface potential of electric force microscopy(EFM). We suggest that pre-annealing at $100^{\circ}C$ can be applied for improving optical, electrical and structural properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• 한국정밀공학회지
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• 제27권7호
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• pp.28-35
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• 2010

In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

• Journal of Mechanical Science and Technology
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• 제18권9호
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• pp.1680-1688
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• 2004

The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.

• 한국진공학회지
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• 제18권3호
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• pp.213-220
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• 2009

Al이 도핑된 투명 전도성 Al:ZnO (AZO) 박막에 대한 RF magnetron sputtering 증착 법을 이용한 저온 최적공정조건을 연구하였다. 투명전극 재료로써의 AZO 박막의 전기적, 결정학적 물성을 최대한 향상시키기 위해서, in-situ상태에서 유리기판상에 최적화된 증착 조건의 AZO 버퍼 층을 삽입하는 이중박막 구조를 제작하였다. RF 인가 전력 $50{\sim}60\;W$에서 증착된 버퍼층 위에 120 W의 RF 전력에서 성장한 AZO 박막의 경우, 비저항 $3.9{\times}10^{-4}{\Omega}cm$, 전하 캐리어농도 $1.22{\times}10^{21}/cm^3$, 홀 이동도 $9.9\;cm^2/Vs$의 전기적 특성을 보였다. 이러한 결과는 버퍼 층이 없는 기존의 단일 구조와 비슷하나, 전기적 비저항 특성을 약 30% 정도 향상시킬 수 있었으며, 전기적 특성의 향상 원인을 $Ar^+$ 이온의 입사 에너지의 변화에 따른 버퍼 층의 압축응력과 결정화 정도와의 의존성으로 설명하였다.

• 마이크로전자및패키징학회지
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• 제14권1호
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• pp.33-38
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• 2007

본 실험에서는 Non-Conductive Adhesive (NCA) 와 고분자 범프를 이용한 COG (Chip-on-glass) 접합에 대하여 연구하였다. 산화막이 증착된 Si 기판 위에 고분자 범프를 사진식각 방법으로 형성하고, 고분자 범프 위에 직류 마그네트론 스퍼터링 방법으로 금속 박막층을 증착하였다. 기판으로는 Al을 증착한 유리기판을 사용하였다. 두 종류의 NCA를 사용하여 $80^{\circ}C$에서 하중을 변화시켜가며 접합을 실시하였다. 접합부의 특성을 평가하기 위하여 4단자 저항 측정법을 이용하여 접합부의 접속 저항을 측정하였으며, 주사전자현미경을 이용하여 접합부를 관찰하였다. 신뢰성은 $0^{\circ}C$ 와 $55^{\circ}C$ 사이에서 열충격 실험을 2000회까지 실시하여 평가하였다. 신뢰성 측정 전 접합부의 저항 값은 $70-90m{\Omega}$을 나타내었다. 200MPa 이상의 접합 압력에서는 고분자 범프가 NCA 의 필러 파티클에 의해 손상된 것을 관찰하였다. 신뢰성 측정 후 일부 범프가 fail 되었는데 범프의 fail 원인은 범프의 윗부분보다 상대적으로 금속층이 얇게 증착된 범프의 모서리 부분의 금속층의 끊어졌기 때문이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1485_1486
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• 2009

Transparent conductive metal oxide films of $In_{2-x}Sn_xO_3$ (ITiO) and $In_{2-x}Sn_xO_3$ (ITO) were deposited by RF magnetron sputtering at relatively low substrate temperature (~$300^{\circ}C$) and at high rate (~10nm/min). Electrical and optical properties of the films were investigated as well as film structure and morphology, as it is compared with the commercial F:$SnO_2$ (FTO) glass. Near infrared ray transmittance of ITiO is the highest for wavelengths over 1000nm, which can increase dye sensitized compared to ITiO and FTO. Dye-sensitized solar cells (DSCs) were fabricated using the ITiO, ITO and FTO. Photoconversion efficiency ($\eta$) of DSC using ITiO is 5.5%, whereas 5.0% is obtained from DSC with ITO, both at 100mW/$cm^2$ light intensity.

• 한국표면공학회지
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• 제38권4호
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.