• Title/Summary/Keyword: Low-temperature Technique

검색결과 772건 처리시간 0.036초

Low-Temperature Si and SiGe Epitaxial Growth by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition (UHV-ECRCVD)

  • Hwang, Ki-Hyun;Joo, Sung-Jae;Park, Jin-Won;Euijoon Yoon;Hwang, Seok-Hee;Whang, Ki-Woong;Park, Young-June
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.422-448
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    • 1996
  • Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

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회화방법에 따른 폐 내 석면섬유의 투과전자현미경 분석 (Analysis of Asbestos Fiber in Lungs by Transmission Electron Microscopy According to the Digestion Method)

  • 한정희;정용현;양정선
    • 한국산업보건학회지
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    • 제23권4호
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    • pp.333-340
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    • 2013
  • Objectives: This study was designed to establish an accurate analytical method for asbestos in a biological sample for determining occupational asbestos-related diseases and relief of the health effects of environmental asbestos. Methods: Biological samples were obtained from lungs of rats following intratracheal instillation of asbestos(Chrysotile, anthophyllite) and were prepared according to digestion method(Wet digestion, high temperature ashing, low temperature ashing). The samples were then analyzed for asbestos fibers using a transmission electron microscope equipped with an energy dispersive X-ray spectrometer. Results: Low temperature plasma ashing removed more of the organic components and reduced fiber loss compared to the wet digestion method, making specimens so prepared more suitable for transmission electron microsocpy. Conclusions: The low temperature ashing technique is the most accurate method for analyzing asbestos in biological samples.

Low Temperature Processes of Poly-Si TFT Backplane for Flexible AM-OLEDs

  • Hong, Wan-Shick;Lee, Sung-Hyun;Cho, Chul-Lae;Lee, Kyung-Eun;Kim, Sae-Bum;Kim, Jong-Man;Kwon, Jang-Yeon;Noguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.785-789
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    • 2005
  • Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below $150^{\circ}C$ during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. $SiN_x$ films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

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고온초전도 선재의 극저온 열전도도 측정 및 특성평가 (Evaluation of thermal conductivity for High temperature superconductor tape at low temperature)

  • 김정호;장석헌;김규태;주진호;나완수;강형구;고태국
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.153-155
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    • 2002
  • The thermal conductivity of Ag and Ag alloys at low temperature (10~110 K) were evaluated by direct measurement technique. It was observed that thermal conductivity decreased with increasing the content of alloying elements such as Mg and Cu. Thermal conductivity of pure Ag tape at 20 K was measured to be 2794 W/m$\cdot$K. On the other hand, the corresponding values of Ag/Al tape and Ag/Al/sus315L tape were 1235 and 352 W/m$\cdot$K, respectively, indicating 2 to 8 times lower than that of pure Ag tape.

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절전형 ZnO-Si계 CO 가스 센서 제작과 그 특성 (A properties and the fabrication of ZnO-Si system CO gas sensor with low power consumption)

  • 이승환;홍형기;김종관;장병호;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.324-326
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    • 1997
  • Low power ZnO-Si gas sensor below 500 mW at operating temperature has been fabricated by using micromachining technique. I-V measurement shows the power consumption of 260 mW at $400^{\circ}C$ The sensitivity of the sensor was 45 percent at operating temperature of $350^{\circ}C$(230 mW) with 1,000 ppm CO gas atmosphere. The response and the recovery time found out to be 94 sec and 180 sec, respectively, when CO gas was used. In order to measure the exact temperature of the gas sensing layer, Pt/Cr bilayer-RTD was used in this experiment.

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DVD/Blu-ray 스템퍼를 이용한 핫엠보싱 특성 (Characteristics of Hot Embossing using DVD/Blu-ray Stamper)

  • 김병희;반준호;신재구;김헌영
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 추계학술대회논문집
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    • pp.305-310
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    • 2004
  • The Hot Embossing Lithography(HEL) as a method for the fabrication of nanostructure with polymer is becoming increasingly important because of its simple process, low cost, high replication fidelity and relatively high throughput. In this study, we investigated the characteristics of hot embossing lithography as a nanoreplication technique. To grasp characteristics of nano patterning rheology by process parameters(embossing temperature, pressure and time), we have carried out various experiments by using the DVD(400nm pattern width) and Blu-ray nickel stamps(150nm pattern width). During the hot embossing process, we have observed the characteristics of the size effect. The quality of products made by hot embossing is affected by its cooling shrinkage. The demolding process at the glass transition temperature results in low quality because of the shrinkage of the polymer. Therefore, the quantification of the temperature condition is essential for the replication of high quality.

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액분사 사이클을 이용한 공기 열원 열펌프의 사이클 시뮬레이션 (Cycle Simulation of an Air Source Heat Pump Using Liquid Injection)

  • 김욱중;홍용주;남임우;강원일;공용상
    • 설비공학논문집
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    • 제12권3호
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    • pp.244-250
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    • 2000
  • An air source heat pump using liquid injection technique, which can be applied for very low temperature climate, has been simulated to examine the design options. Comparison between the simulation and experiment has been carried out to validate the simulation method. Effects of various design parameters such as liquid injection rate and injection pressure are Investigated to optimize the performance of the heat pump. Finally, optimal liquid infection rate and injection pressure to maintain sufficient heating capacity and moderate discharge refrigerant temperature are suggested when the heat pump was operated at very low outdoor temperature.

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Enhanced Inductively Coupled Plasma의 자화 주파수 의존 특성 (Magnetized Frequency characteristics of Enhanced Inductively Coupled Plasma)

  • 라상호;박세근;오범환
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.302-305
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    • 2000
  • It is important to control the electron energy distribution to have high quality plasma process. A conventional inductively coupled plasma(ICP) source with 13.56MHz power is not adequate for low damage sub-half micron patterning process due to higher electron temperature. Only the pulsed plasma technique seems to provide low electron temperature, and thus low process damage. Recently, a novel method proposed by us, named as ‘Enhanced-ICP’, which uses periodic weak axial magnetic field added to a normal ICP source, has shown great improvement in etch characteristics. changes of plasma characteristics according to the frequency of time-varying axial magnetic field have been observed by probe-time-averaged Langmuir probe.

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극지운항용 빙해선박의 밸러스트 수 결빙방지 기법 연구 (A Study on Anti-Icing Technique for Ballast Water of Icebreaking Vessels Operating in Ice-Covered Water)

  • 정성엽;이춘주;조성락
    • 대한조선학회논문집
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    • 제48권1호
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    • pp.93-97
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    • 2011
  • When freezing is present on ballast water, it can impose additional loads on the hull and effect on stabilization of ship. The anti-icing techniques of ballast water, therefore, are key criteria for ship safety. The existing anti-icing techniques of ballast tank are hull heating, water circulation and air bubble system etc. In this research, anti-icing performance tests for the ballast water using micro-bubble system and sea water circulation system have been carried out at two temperature conditions($-10^{\circ}C$ and $-25^{\circ}C$). Ambient temperature, sea water temperature and temperature of the inner parts of the ballast tank are measured and also ballast water conditions are checked during the model test. The applied anti-icing techniques of ballast water, such as micro-bubble system and sea water circulation system show good performance in the low temperature conditions.

Measurements of Magnetic Properties of Electromagnetic Actuator in High-Temperature Environment

  • Noh, M.;Gi, M.J.;Kim, D.;Park, Y.W.;Lee, J.;Kim, J.
    • Journal of Magnetics
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    • 제20권1호
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    • pp.86-90
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    • 2015
  • Electromagnetic actuators are versatile and able to meet demanding requirements, such as operation in very low or very high temperatures. When the actuator is used in a high-temperature environment up to $500^{\circ}C$, we need to know how the force-producing capability of the actuator is affected by the operating temperature. Specifically, it is necessary to know the temperature-dependence of magnetic properties that determine the mechanical forces. In this paper, we measure the changes in magnetic properties of SUS410 material in high-temperature environment. We also devise a novel signal processing technique to remove the integration drift. At the field strength of 18,000 A/m, we found that the flux density at $500^{\circ}C$ is decreased by 26%, compared to the result at room temperature. Therefore, the actuator must be sized appropriately, if it is to operate in high-temperature settings.