• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Textile Coloration and Finishing
• /
• v.4 no.1
• /
• pp.1-9
• /
• 1992

In order to study on the surface modification of the poly(ethylene Terephthalate)(PET) fabrics, low temperature plasma$(O_2)$ has been irradiated on the PET fabrics in various conditions. Experiments were carried out at pressure ranging from 0.5 tort to 3 tort. The properties of PET fabrics treated with low temperature plasma($(O_2)$, such as bathochromic, wettability, antistatic property were measured. Etching ratio was increased as the pressure and the output of discharge increased. When its were put on the cathode, the most efficient effect of etching according to the position of sample between anode and cathode was obtained. The bathochromic effect has more or less improved as pressure was getting higth in case of dyed fabrics treated with only low temperature plasma$(O_2)$ . And when it was treated with the low refractive index resin, the bathochromic of dyed fabrics treated with low temperature plasma$(O_2)$ was better than that of the dyed fabrics untreated.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.12
• /
• pp.1880-1885
• /
• 2012

Nonlinear dynamical behaviors in thermionic low pressure discharge are investigated using a particle-in-cell(PIC) simulation. An electrostatic PIC code is developed to model the plasma discharge system including the kinetic effects. The elastic collision, excitation collision, ionization collision, and electron-ion recombination collision are considered in this code. The generated electrons and ions are traced to analyze physical characteristics of the plasma. The simulation results show that the nonlinear oscillation structures are observed for cold plasma in the system and the similar structures are observed for warm plasma with a shift in values of the bifurcation parameter. The detailed oscillation process can be subdivided into three distinct mode; anode-glow, temperature-limited, and double-layer modes.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.409-412
• /
• 2002

Under atmospheric pressure, apparently homogeneous and stable plasma can be generated from insulator barrier rf plasma generators each of which has an rf powered cathode and a grounded anode covered with a dielectric insulating material. In order to characterize the generating plasma under atmospheric pressure, some basic characteristic have been evaluated by the Langmuire probe method as well as by optical emission spectroscopy. From the result of plasma characteristics, the generated plasma was verified to be nonequilibrium; T(electron)>T(excitation)>T(gas). High rate Si(100) etching (($1.5{\mu}m$/min) were achieved by using He plasma containing a small amount of $CF_4$.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.299-301
• /
• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminous efficacy as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 100 [mTorr] and the RF power was varied from 10 [W] to 120 [W]. It was found that the luminous flux tends to be decreased when argon pressure is increased, and the luminous flux is increased as RF fewer is increased. It was also found that the luminance efficacy is high when the argon pressure is low and when the RF power is low.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.245-246
• /
• 2011

Emission lines ratios were used for diagnostics of and excited level densities in low-temperature plasmas. In this work, an optical emission spectroscopy (OES) was used to determine the electron temperature and metastable level densities in low-pressure inductively coupled plasma. The emission spectroscopy method was based on a simple collisional-radiative model. The selected lines of the Ar(4p to 4s) were influenced by the radiation trapping at relatively high pressures where the plasma become optically thick. To quantify this effect, a pressure dependence factor ${\alpha}$(P) was derived by using corrections for the measured intensities. It was found that the lower metastable level densities were obtained when ${\alpha}$(P) increased with the increasing discharge pressure. The effect of non-Maxwellian electron energy distribution functions (EEDFs) on the metastables was also presented and discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.121.1-121.1
• /
• 2014

Recently, much attention has been given to plasma production under liquid and its applications [1]. However, most of plasma production techniques reported so far utilize high voltage dc, ac, rf or microwave power [2], where damage to discharge electrodes and small discharge volume are remained issues. As an alternative of plasma production method under liquid, we have proposed pulsed microwave excited plasma using slot antenna, where damage to the slot electrode can be minimized and plasma volume can be increased. We have also reported improvement of treatment efficiency with use of reduced-pressure condition during the discharge [3]. To realize low pressure conditions in liquid, various alternative technique can be considered. One possible technique is simultaneous injection of microwave power and ultrasonic wave. Ultrasonic wave induces pressure fluctuation with the wave propagation and is so far used for cavitation production in the water. We propose utilization of reduced pressure induced by ultrasonic cavitation for improvement of the plasma production. Correlation between the plasma production and the ultrasonic power will be discussed.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1375-1380
• /
• 2018

Atmospheric-pressure plasma has a great potential in many applications due to its simplicity rather than low pressure plasmas. In material processing, biomedical applications, and many other applications, the input power, gas flow rate, and the geometry of electrode have been mainly considered and studied as important external parameters of atmospheric-pressure plasma control. Besides, since the atmospheric-pressure plasmas are typically generated in an open air, the relative humidity is difficult to control and can change day by day. Therefore, the relative humidity cannot be ignored for plasmas. Thus, in this work, the atmospheric-pressure plasma jet was characterized by changing relative humidity, and it was found that the increase in electron density and OH radicals are due to Penning ionization between helium metastable and water vapors at higher humidity condition.

• Particle and aerosol research
• /
• v.5 no.3
• /
• pp.123-131
• /
• 2009

This paper presents simulation results of particle transport in low-pressure, low-temperature plasma environment. The size dependent transport of particles in the plasma is investigated with a two-dimensional simulation tool developed in-house for plasma chamber analysis and design. The plasma model consists of the first two and three moments of the Boltzmann equation for ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The particle transport model takes into account all important factors, such as gravitational, electrostatic, ion drag, neutral drag and Brownian forces, affecting the motion of particles in the plasma environment. The particle transport model coupled with both neutral fluid and plasma models is simulated through a Lagrangian approach tracking the individual trajectory of each particle by taking a force balance on the particle. The size dependant trap locations of particles ranging from a few nm to a few ${\mu}m$ are identified in both electropositive and electronegative plasmas. The simulation results show that particles are trapped at locations where the forces acting on them balance. While fine particles tend to be trapped in the bulk, large particles accumulate near bottom sheath boundaries and around material interfaces, such as wafer and electrode edges where a sudden change in electric field occurs. Overall, small particles form a "dome" shape around the center of the plasma reactor and are also trapped in a "ring" near the radial sheath boundaries, while larger particles accumulate only in the "ring". These simulation results are qualitatively in good agreement with experimental observation.

• Fibers and Polymers
• /
• v.6 no.2
• /
• pp.113-120
• /
• 2005

Helium-oxygen plasma treatments were conducted to modify poly(trimethylene terephthalate) (PIT) and poly(ethylene terephthalate) (PET) warp knitted fabrics under atmospheric pressure. Lubricant and contamination removals by plasma etching effect were examined by weight loss $(\%)$ measurements and scanning electron microscopy (SEM) analysis. Surface oxidation by plasma treatments was revealed by x-ray photoelectron spectroscopy (XPS) analyses, resulting in formation of hydrophilic groups and moisture regain $(\%)$ enhancement. Low-stress mechanical properties (evaluated by Kawabata evaluation system) and bulk properties (air permeability and bust strength) were enhanced by plasma treatment. Increasing interfiber and interyarn frictions might play important roles in enhancing surface property changes by plasma etching effect, and then changing low-stress mechanical properties and bulk properties for both fabrics.