• Title/Summary/Keyword: Low-pressure plasma

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Deposition of diamond film at low pressure using the RF plasma CVD (고주파 플라즈마 CVD에 의한 저 압력에서의 다이아몬드 막의 성장)

  • Koo, Hyo-Geun;Park Sang-Hyun;Park Jae-Yoon;Kim Kyoung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.2
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    • pp.49-56
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    • 2001
  • Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

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A Study on the Propensities of Helicon Plasma and Application for Etching (헬리콘 플라즈마 물성특성 및 식각응용에 관한 연구)

  • Lee, Byoung-Ill;Do, Hyun-Ho;Yang, Ill-Dong;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.264-267
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    • 1993
  • A high plasma density of $10^{12}cm^{-3}$ can be produced at the pressure of few mTorr with R. F input power of 300-400W. A radially uniform plasma to a radius of 7cm at the substrate was produced at the pressure of 1 mTorr. The electron density and temperature were confirmed with double Langmuir probe, $\mu$-wave interferometer. It has bee found that the dispersion relation N/B=constant not be applied at the low R.F input power(<600W) but can be applied at high R.F input power(>600W).

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Surface Modification with Atmospheric Microwave Agron Plasma Jet Assisted with Admixture of H2O2 and Analysis of Plasma Characteristics

  • Won, I.H.;Shin, H.K.;Kwon, H.C.;Kim, H.Y.;Kang, S.K.;Lee, J.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.544-545
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    • 2013
  • Recently, low-temperature atmospheric-pressure plasmas have been investigated [1,2] for biomedical applications and surface treatments. Experiments for improving hydrophilicity of stainless steel (SUS 304) plate with atmospheric microwave argon and H2O2 mixture plasma jet [3] were carried out and experimental measurements and plasma simulations were conducted for investigating the characteristics of plasma for the process. After 30 s of low power (under 10 W) and low temperature (under $50^{\circ}C$) plasma treatment, the water contact angle decreased rapidly to around $10^{\circ}$ from $75^{\circ}$ and was maintained under $30^{\circ}$ for a day (24 hours). The surface free energy, calculated from the contact angles, increased. The chemical properties of the surface were examined by X-ray Photoelectron Spectroscopy (XPS) and the surface morphology and roughness were examined by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. The characteristics of plasma sources with several frequencies were investigated by Optical Emission Spectroscopy (OES) measurement and one-dimensional Particle-in-Cell (PIC) simulation and zero-dimensional global simulation [4]. The relation between plasma components and the efficacy of the surface modification were discussed.

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A STUDY ON THE RELATIONSHIP BETWEEN PLASMA CHARACTERISTICS AND FILM PROPERTIES FOR MgO BY PULSED DC MAGNETRON SPUTTERING

  • Nam, Kyung H.;Chung, Yun M.;Han, Jeon G.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.35-35
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    • 2001
  • agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

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A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma (저압 플라즈마 세정가스에 따른 세정특성 연구)

  • Koo, H.J.;Ko, K.J.;Chung, C.K.
    • Clean Technology
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    • v.7 no.3
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    • pp.203-214
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    • 2001
  • A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

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High density plasma etching of CoFeB and IrMn magnetic films with Ti hard mask

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.233-233
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

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Changes of Plasma Cardiovascular Disease Risk Factors according to the Health Practice and Dietary Habits in Healthy Male University Studnets

  • Kyeong Sook Yim
    • Korean Journal of Community Nutrition
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    • v.3 no.5
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    • pp.685-694
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    • 1998
  • This cross-sectional study was conducted to describe the changes of plasma cardiovascular disease(CVD) risk factors in Korea. Overnight fasting plasma levels of total cholesterol, high density lipoprotein(HDL)-cholesterol, triacylglycerol and glucose were analyzed. Blood pressure and anthropometric data were also measured. Health practice factors such as smoking status, alcohol consumption and frequency fo exercise were evaluated by a self-administered questionnaire. Questions regarding dietary habits and food preferences were also asked. Seventy eight percent of the subjects had more than one CVD risk factor. Plasma total cholesterol, triacylglycerol, and fasting blood glucose were significantly increased according to the subjects body mass index$(kg/m^2$, BMI), whereas HDL-cholesterol, low density lipoprotein(LDL)-cholesterol and blood pressure showed no significant differences with BMI. Current smokers had significantly high plasma total cholesterol, LDL-cholesterol and triacylglycerol levels. Alcohol consumption significantly increased plasma total cholesterol and fasting blood sugar, but regular exercise had no effects on the plasma CVD risk factors. Overeating and frequency of fast food consumption were positively correlated with the CVD risk score, whereas intake of grains, meats and vegetables were negatively correlated with that score. A stepwise multiple regression analysis was performed to examine the effects of specific dietary factors on plasma lipid levels. For plasma total cholesterol level, the frequency of fast food intake explained 8% of the variance, followed by habitual overeating, frequency of grain intake and high cholesterol food intake(Model $R^2$=22.4%). For plasma triacylglycerol level, preference of oily foods accounted for 7.5% of the variance, followed by eating breakfast, preference of fruit and frequency of grain intake(Model $R^2$=22.0%). The findings suggest that intervention programs to reduce the risk of CVD should focus on health practice through reducing BMI, smoking cessation and moderate or no alcohol drinking. Moreover, desirable dietary habits such as eating breakfast, not overeating and reduced intake of fast food may improve CVD risk.

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Hydrophilicity Improvement of Polyamide66/Polyphenylene Blends by Plasma Surface Treatment (Polyamide66/Polyphenylene 블렌드의 플라스마 표면처리를 통한 친수성 향상)

  • Ji Young-Yeon;Kim Sang-Sik
    • Polymer(Korea)
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    • v.30 no.5
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    • pp.391-396
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    • 2006
  • It has been reported that plasma treatments are used to modify surface properties of polymers such as adhesivity hydrophobicity and hydrophilicity. Using plasma treatment, interfacial pro-perty can be introduced to a polymer surface without affecting the desired bulk properties of a material. In this study, commercial polyamide66 (PA66) /polyphenylene (PPE) polymer was modified by plasma treatment under a various gas specious for elimination of organic compound and polymer surface property with hvdrophilicity. PA66/PPE polymer with hydrophilicity was treated by RF plasma vacuum system under a various parameter such as gas specious, processing time and partial pressure. Hydrophilicity of PA66/PPE was confirmed by calculation of the surface free energy from contact angle measurement. The highest surface free energy of $50.03 mJ/m^2$ with the lowest contact angle of $14^{\circ}$ was obtained at plasma process power of 100 W, treatment time of 2 min and $Ar/O_2$ gases of 100 and 200 sccm. Moreover the change of organic compounds on the polymer surface was analyzed by fourier transforms infrared spectrometry (FTIR).

Numerical Modeling of a Rectangular Type Inductively Coupled Plasma System (사각형 유도 결합 플라즈마 시스템의 수치 모델링)

  • Joo, Jung-Hoon
    • Journal of Surface Science and Engineering
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    • v.45 no.4
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    • pp.174-180
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    • 2012
  • Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

The study on characteristics of corona ignitor for surface treatment of insulator (절연재료의 표면개질을 위한 코로나 발생기의 특성에 관한 연구)

  • ;;;;Y.Tabata;J.S Chang
    • Electrical & Electronic Materials
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    • v.8 no.4
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    • pp.504-508
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    • 1995
  • The purpose of this research is to study on characteristics of corona ignitor which was designed for ignition of plasma, used at hard coating, surface treatment and thin film preparation, at high pressure. Corona ignitor composed of hollow type inner electrode and ring type external electrode. Though corona voltage increased with increasing distance between electrodes, corona discharge can be controlled stably. The gas flow in hollow type inner electrode and the construction between electrodes affect a length of corona flame and corona phenomenon. It is possible to ignite the . plasma, usually generated at low pressure(10 Torr), at high pressure(100 Torr) by corona ignitor.

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