• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.72-74
• /
• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.1
• /
• pp.21-26
• /
• 2003

4H-SiC Schottky rectifiers were exposed to pure Ar discharges in a planar coil Inductively Coupled Plasma system, as a function of source power, of chuck power and process pressure. The reverse breakdown voltage ($V_B$) decreased as a result of plasma exposure due to the creation of surface defects associated with the ion bombardment. The magnitude of the decrease was a function of both ion flux and ion energy. The forward turn-on voltage ($V_F$), on-state resistance ($R_{ON}$) and diode ideality factor (n) all increased after plasma exposure. The changes in all of the rectifier parameters were minimized at low power, high pressure plasma conditions.

• Journal of the Korean Vacuum Society
• /
• v.9 no.1
• /
• pp.7-15
• /
• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.162.1-162.1
• /
• 2015

The use of plasma has increased in bio-application field in recent years. Particularly, water treated by arc discharge or atmospheric pressure plasma has been actively utilized in bio-industry. In this study, we have developed a plasma activated water generating system. For this system, two kinds of plasma sources; dielectric barrier discharge (DBD) plasma and arc discharge plasma have been used. The discharge energy was calculated using the breakdown voltage and current, and the emission spectrum was measured to investigate the generated reactive species. We also analyzed the amount of reactive oxygen and nitrogen species in water using the chemical methods and nitric oxide sensor. Finally, the influence of plasma generated reactive species on the germination and growth of spinach (Spinacia oleracea) was investigated. Spinach is a green leafy vegetable that contains a large amount of various physiologically active organic compounds. However, it is characterized with a low seed germination rate.

• Textile Coloration and Finishing
• /
• v.24 no.2
• /
• pp.131-137
• /
• 2012

para-Aramid fibers were treated by low-temperature plasma to improve the adhesion. The surface of para-aramid fibers were treated with gaseous plasma of several discharge power and treatment time in oxygen gas at 1Torr pressure. The treated fibers at low-temperature plasma were taken oxygen-containing functional groups and micro-crator on the surface. The modified fibers were measured by dynamic contact angle analyzer and XPS(X-ray photoelectron spectroscopy). The Interfacial adhesion properties of aramid fabric and polyurethane resin were determined by T-peel test. The surface of aramid fibers were observed by FE-SEM photographs. It was found that surface modification and chemical component ratio of the aramid fibers were improved wettability and adhesion characterization.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.284-284
• /
• 2010

Currently, hydrogen has been produced by Steam Reforming or partial oxidation reforming processes mainly from oil, coal, and natural gas and results in the production of $CO_2$. However, these are influenced greatly on the green house effect of the earth. so it is important to find the new way to produce hydrogen utilizing water without producing any environmentally harmful by-products. In our research, we use microwave water plasma and photocatalyst to improve dissociation rate of water. At low pressure plasma, electron have high energy but density is low, so temperature of reactor is low. This may cause of recombination in the generated hydrogen and oxygen from splitting water. If it want to high dissociation rate of water, it is necessary to control of recombination of the hydrogen and oxygen using photocatalyst. We utilize the photocatalytic material($TiO_2$, ZnO) coated plasma reactor to use UV in the plasma. The quantity of hydrogen generated was measured by a Residual Gas Analyzer.

• International Journal of Aeronautical and Space Sciences
• /
• v.16 no.3
• /
• pp.339-346
• /
• 2015

Aerodynamic flow control phenomena were investigated with a low-current DC surface discharge plasma actuator. The plasma actuator was found to operate in three different discharge modes with similar discharge currents of about 1 mA or less. Stable continuous DC discharge without audible noise was obtained at higher ballast resistances and lower discharge currents. However, even with continuous DC power input, a low-frequency self-pulsed discharge was obtained at lower ballast resistances, and a high-frequency self-pulsed discharge was obtained at higher set-point currents and higher ballast resistances, both with audible noise. The Schlieren image reveals that the low-frequency self-pulsed mode produces a synthetic jet-like flow implying that a gas heating effect plays a role, even though the discharge current is small. The high-frequency self-pulsed mode produces pulsed jets in a tangent direction, and the continuous DC mode produces a steady straight pressure wave. Particle image velocimetry (PIV) images reveal that the induced flow field by the low-frequency self-pulsed mode has flow propagating in the radial direction and centered between the electrodes. The high-frequency self-pulsed mode and continuous DC mode produce flow from the anode to the cathode. The perturbed region downstream of the cathode is larger in the high-frequency self-pulsed mode with similar maximum speeds.

• Journal of the Korean Society for Heat Treatment
• /
• v.19 no.4
• /
• pp.230-237
• /
• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.2
• /
• pp.95-100
• /
• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.2
• /
• pp.49-56
• /
• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.